Magneto-resistance in a lithography defined single constrained domain wall spin valve

We have measured domain wall magnetoresistance in a single lithographically constrained domain wall. An H-shaped Ni nano-bridge was fabricated by e-beam lithography with the two sides being single magnetic do- mains showing independent magnetic switching. The connection between the sides constraining the domain wall when the sides line up anti-parallel. The magneto-resistance curve clearly identifies the magnetic con- figurations that are expected from a spin valve-like structure. The value of the magneto-resistance at room temperature is around 0.1% or 0.4 ­. This value is shown to be in agreement with a theoretical formulation based on spin accumulation. Micromagnetic simulations show it is possible to reduce the size of the domain wall further by shortening the length of the bridge

Son of Quisling Speaks

Poem by Jan H. de Groot, translated by Case J. Boot from Modern Koren

Holland

Poem by Jan H. de Groot, translated by Case J. Boot from Modern Koren

Execution Wetering Park (Amsterdam, March 2, 1945, 9:15-9:35 a.m.)

Poem by Jan H. de Groot, translated by Case J. Boot from Modern Koren

The relation between cardiac 123I-mIBG scintigraphy and functional response 1 year after CRT implantation

Cardiac resynchronization therapy (CRT) is a disease-modifying therapy in patients with chronic heart failure (CHF). Current guidelines ascribe CRT eligibility on three parameters only: left ventricular ejection fraction (LVEF), QRS duration, and New York Heart Association (NYHA) functional class. However, one-third of CHF patients does not benefit from CRT. This study evaluated whether 123I-meta-iodobenzylguanidine (123I-mIBG) assessed cardiac sympathetic activity could optimize CRT patient selection

Nonpolar resistive switching in Cu/SiC/Au non-volatile resistive memory devices

Amorphous silicon carbide (a-SiC) based resistive memory (RM) Cu/a-SiC/Au devices were fabricated and their resistive switching characteristics investigated. All four possible modes of nonpolar resistive switching were achieved with ON/OFF ratio in the range 10 6-10 8. Detailed current-voltage I-V characteristics analysis suggests that the conduction mechanism in low resistance state is due to the formation of metallic filaments. Schottky emission is proven to be the dominant conduction mechanism in high resistance state which results from the Schottky contacts between the metal electrodes and SiC. ON/OFF ratios exceeding 10 7 over 10 years were also predicted from state retention characterizations. These results suggest promising application potentials for Cu/a-SiC/Au RM