1,053 research outputs found
First-Principles Study of Substitutional Metal Impurities in Graphene: Structural, Electronic and Magnetic Properties
We present a theoretical study using density functional calculations of the
structural, electronic and magnetic properties of 3d transition metal, noble
metal and Zn atoms interacting with carbon monovacancies in graphene. We pay
special attention to the electronic and magnetic properties of these
substitutional impurities and found that they can be fully understood using a
simple model based on the hybridization between the states of the metal atom,
particularly the d shell, and the defect levels associated with an
unreconstructed D3h carbon vacancy. We identify three different regimes
associated with the occupation of different carbon-metal hybridized electronic
levels:
(i) bonding states are completely filled for Sc and Ti, and these impurities
are non-magnetic;
(ii) the non-bonding d shell is partially occupied for V, Cr and Mn and,
correspondingly, these impurties present large and localized spin moments;
(iii) antibonding states with increasing carbon character are progressively
filled for Co, Ni, the noble metals and Zn. The spin moments of these
impurities oscillate between 0 and 1 Bohr magnetons and are increasingly
delocalized.
The substitutional Zn suffers a Jahn-Teller-like distortion from the C3v
symmetry and, as a consequence, has a zero spin moment. Fe occupies a distinct
position at the border between regimes (ii) and (iii) and shows a more complex
behavior: while is non-magnetic at the level of GGA calculations, its spin
moment can be switched on using GGA+U calculations with moderate values of the
U parameter.Comment: 13 figures, 4 tables. Submitted to Phys. Rev. B on September 26th,
200
Crossover between distinct mechanisms of microwave photoresistance in bilayer systems
We report on temperature-dependent magnetoresistance measurements in balanced
double quantum wells exposed to microwave irradiation for various frequencies.
We have found that the resistance oscillations are described by the
microwave-induced modification of electron distribution function limited by
inelastic scattering (inelastic mechanism), up to a temperature of T*~4 K. With
increasing temperature, a strong deviation of the oscillation amplitudes from
the behavior predicted by this mechanism is observed, presumably indicating a
crossover to another mechanism of microwave photoresistance, with similar
frequency dependence. Our analysis shows that this deviation cannot be fully
understood in terms of contribution from the mechanisms discussed in theory.Comment: 7 pages, 4 figure
Electron transport through antidot superlattices in heterostructures: new magnetoresistance resonances in lattices with large diameter antidots
In the present work we have investigated the transport properties in a number
of Si/SiGe samples with square antidot lattices of different periods. In
samples with lattice periods equal to 700 nm and 850 nm we have observed the
conventional low-field commensurability magnetoresistance peaks consistent with
the previous observations in GaAs/AlGaAs and Si/SiGe samples with antidot
lattices. In samples with a 600 nm lattice period a new series of
well-developed magnetoresistance oscillations has been found beyond the last
commensurability peak which are supposed to originate from periodic skipping
orbits encircling an antidot with a particular number of bounds.Comment: To appear in EuroPhys. Let
Magnetoresistance oscillations in multilayer systems - triple quantum wells
Magnetoresistance of two-dimensional electron systems with several occupied
subbands oscillates owing to periodic modulation of the probability of
intersubband transitions by the quantizing magnetic field. In addition to
previous investigations of these magneto-intersubband (MIS) oscillations in
two-subband systems, we report on both experimental and theoretical studies of
such a phenomenon in three-subband systems realized in triple quantum wells. We
show that the presence of more than two subbands leads to a qualitatively
different MIS oscillation picture, described as a superposition of several
oscillating contributions. Under a continuous microwave irradiation, the
magnetoresistance of triple-well systems exhibits an interference of MIS
oscillations and microwaveinduced resistance oscillations. The theory
explaining these phenomena is presented in the general form, valid for an
arbitrary number of subbands. A comparison of theory and experiment allows us
to extract temperature dependence of quantum lifetime of electrons and to
confirm the applicability of the inelastic mechanism of microwave
photoresistance for the description of magnetotransport in multilayer systems.Comment: 10 pages, 5 figure
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