455 research outputs found
1.55-μm mode-locked quantum-dot lasers with 300 MHz frequency tuning range
This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett. 106, 031114 (2015) and may be found at https://doi.org/10.1063/1.4906451.Passive mode-locking of two-section quantum-dot mode-locked lasers grown by metalorganic vapor phase epitaxy on InP is reported. 1250-μm long lasers exhibit a wide tuning range of 300 MHz around the fundamental mode-locking frequency of 33.48 GHz. The frequency tuning is achieved by varying the reverse bias of the saturable absorber from 0 to −2.2 V and the gain section current from 90 to 280 mA. 3 dB optical spectra width of 6–7 nm leads to ex-facet optical pulses with full-width half-maximum down to 3.7 ps. Single-section quantum-dot mode-locked lasers show 0.8 ps broad optical pulses after external fiber-based compression. Injection current tuning from 70 to 300 mA leads to 30 MHz frequency tuning.DFG, 43659573, SFB 787: Halbleiter - Nanophotonik: Materialien, Modelle, BauelementeEC/FP7/EU/264687/Postgraduate Research on Photonics as an Enabling Technology/PROPHE
Electrical manipulation of an electronic two-state system in Ge/Si quantum dots
We calculate that the electron states of strained self-assembled Ge/Si
quantum dots provide a convenient two-state system for electrical control. An
electronic state localized at the apex of the quantum dot is nearly degenerate
with a state localized at the base of the quantum dot. Small electric fields
shift the electronic ground state from apex-localized to base-localized, which
permits sensitive tuning of the electronic, optical and magnetic properties of
the dot. As one example, we describe how spin-spin coupling between two Ge/Si
dots can be controlled very sensitively by shifting the individual dot's
electronic ground state between apex and base
Quantum control of electron--phonon scatterings in artificial atoms
The phonon-induced dephasing dynamics in optically excited semiconductor
quantum dots is studied within the frameworks of the independent Boson model
and optimal control. We show that appropriate tailoring of laser pulses allows
a complete control of the optical excitation despite the phonon dephasing, a
finding in marked contrast to other environment couplings.Comment: to appear in Phys. Rev. Let
Magneto-capacitance probing of the many-particle states in InAs dots
We use frequency-dependent capacitance-voltage spectroscopy to measure the
tunneling probability into self-assembled InAs quantum dots. Using an in-plane
magnetic field of variable strength and orientation, we are able to obtain
information on the quasi-particle wave functions in momentum space for 1 to 6
electrons per dot. For the lowest two energy states, we find a good agreement
with Gaussian functions for a harmonic potential. The high energy orbitals
exhibit signatures of anisotropic confinement and correlation effects.Comment: 3 pages, 3 figure
An Introduction to the Inverse Quantum Bound State Problem in One Dimension
A technique to reconstruct one-dimensional, reflectionless potentials and the
associated quantum wave functions starting from a finite number of known energy
spectra is discussed. The method is demonstrated using spectra that scale like
the lowest energy states of standard problems encountered in the undergraduate
curriculum such as: the infinite square well, the simple harmonic oscillator,
and the one-dimensional hydrogen atom.Comment: 10 pages, 10 figures, Submitted to Am. J. Phys. August 201
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
We have studied the electronic structure of InN and GaN employing G0W0
calculations based on exact-exchange density-functional theory. For InN our
approach predicts a gap of 0.7 eV. Taking the Burnstein-Moss effect into
account, the increase of the apparent quasiparticle gap with increasing
electron concentration is in good agreement with the observed blue shift of the
experimental optical absorption edge. Moreover, the concentration dependence of
the effective mass, which results from the non-parabolicity of the conduction
band, agrees well with recent experimental findings. Based on the quasiparticle
band structure the parameter set for a 4x4 kp Hamiltonian has been derived.Comment: 3 pages including 3 figures; related publications can be found at
http://www.fhi-berlin.mpg.de/th/th.htm
Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots
We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum dots (QDs) subjected to post-growth thermal annealing at different temperatures. At low temperatures annealing strongly affects the bimodal distribution of QDs; at higher temperatures a strong blueshift of the emission occurs. Magnetophotoluminescence reveals that the annealing increases the QD size, with a larger effect occurring along the growth axis, and decreases the carrier effective masses. The main contribution to the blueshift is deduced to be an increase in the average Ga composition of the QDs. The inadvertent annealing which occurs during the growth of the upper AlGaAs cladding layer in laser structures is also studied
GaN/AlN Quantum Dots for Single Qubit Emitters
We study theoretically the electronic properties of -plane GaN/AlN quantum
dots (QDs) with focus on their potential as sources of single polarized photons
for future quantum communication systems. Within the framework of eight-band
k.p theory we calculate the optical interband transitions of the QDs and their
polarization properties. We show that an anisotropy of the QD confinement
potential in the basal plane (e.g. QD elongation or strain anisotropy) leads to
a pronounced linear polarization of the ground state and excited state
transitions. An externally applied uniaxial stress can be used to either induce
a linear polarization of the ground-state transition for emission of single
polarized photons or even to compensate the polarization induced by the
structural elongation.Comment: 6 pages, 9 figures. Accepted at Journal of Physics: Condensed Matte
Theory of quantum dot spin-lasers
We formulate a model of a semiconductor Quantum Dot laser with injection of
spin-polarized electrons. As compared to higher-dimensionality structures, the
Quantum-Dot-based active region is known to improve laser properties, including
the spin-related ones. The wetting layer, from which carriers are captured into
the active region, acts as an intermediate level that strongly influences the
lasing operation. The finite capture rate leads to an increase of lasing
thresholds, and to saturation of emitted light at higher injection. In spite of
these issues, the advantageous threshold reduction, resulting from spin
injection, can be preserved. The "spin-filtering" effect, i.e., circularly
polarized emission at even modest spin-polarization of injection, remains
present as well. Our rate-equations description allows to obtain analytical
results and provides transparent guidance for improvement of spin-lasers.Comment: 7 pages, 3 figure
Biexciton recombination rates in self-assembled quantum dots
The radiative recombination rates of interacting electron-hole pairs in a
quantum dot are strongly affected by quantum correlations among electrons and
holes in the dot. Recent measurements of the biexciton recombination rate in
single self-assembled quantum dots have found values spanning from two times
the single exciton recombination rate to values well below the exciton decay
rate. In this paper, a Feynman path-integral formulation is developed to
calculate recombination rates including thermal and many-body effects. Using
real-space Monte Carlo integration, the path-integral expressions for realistic
three-dimensional models of InGaAs/GaAs, CdSe/ZnSe, and InP/InGaP dots are
evaluated, including anisotropic effective masses. Depending on size, radiative
rates of typical dots lie in the regime between strong and intermediate
confinement. The results compare favorably to recent experiments and
calculations on related dot systems. Configuration interaction calculations
using uncorrelated basis sets are found to be severely limited in calculating
decay rates.Comment: 11 pages, 4 figure
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