Experimentally Constrained Molecular Relaxation: The case of hydrogenated amorphous silicon

We have extended our experimentally constrained molecular relaxation technique (P. Biswas {\it et al}, Phys. Rev. B {\bf 71} 54204 (2005)) to hydrogenated amorphous silicon: a 540-atom model with 7.4 % hydrogen and a 611-atom model with 22 % hydrogen were constructed. Starting from a random configuration, using physically relevant constraints, {\it ab initio} interactions and the experimental static structure factor, we construct realistic models of hydrogenated amorphous silicon. Our models confirm the presence of a high frequency localized band in the vibrational density of states due to Si-H vibration that has been observed in a recent vibrational transient grating measurements on plasma enhanced chemical vapor deposited films of hydrogenated amorphous silicon.Comment: 13 pages, 4 figure

Resonant cavity enhanced detectors embedded in photonic crystals

Cataloged from PDF version of article.We report a resonant cavity enhanced (RCE) detector built around a three-dimensional photonic band gap crystal. The RCE detector was built by placing a monopole antenna within the localized modes of planar and boxlike defectstructures. The enhanced electric field around these defectstructures were then measured by a microwave detector and a network analyzer. We measured a power enhancement factor of 3450 for planar cavity structures. A Fabry–Perot cavity model was used to understand and predict resonant cavity enhancement in this structure. The tuning bandwidth of the RCE detector extends from 10.5 to 12.8 GHz, which corresponds to the full photonic band gap by the crystal. These RCE detectors have increased sensitivity and efficiency when compared to conventional detectors, and can be used for various applications. © 1998 American Institute of Physic

Quasimetallic silicon micromachined photonic crystals

Cataloged from PDF version of article.We report on fabrication of a layer-by-layer photonic crystal using highly doped silicon wafers processed by semiconductor micromachining techniques. The crystals, built using (100) silicon wafers, resulted in an upper stop band edge at 100 GHz. The transmission and defect characteristics of these structures were found to be analogous to metallic photonic crystals. We also investigated the effect of doping concentration on the defect characteristics. The experimental results agree well with predictions of the transfer matrix method simulations. (C) 2001 American Institute of Physics

Mutation of the Traj18 gene segment using TALENs to generate Natural Killer T cell deficient mice.

Invariant Natural Killer T (iNKT) cells are a unique subset of T lymphocytes that have been implicated in both promoting and suppressing a multitude of immune responses. In mice, iNKT cells express T cell antigen receptors (TCRs) comprising a unique TCRα rearrangement between the Trav11 and Traj18 gene segments. When paired with certain Trbv TCRβ chains, these TCRs recognize lipid antigens presented by the major histocompatibility complex (MHC) class I-like molecule, CD1d. Until recently, the sole model of iNKT deficiency targeted the Jα18, which is absolutely required to form the TCR with the appropriate antigenic specificity. However, these mice were demonstrated to have a large reduction in TCR repertoire diversity, which could confound results arising from studies using these mice. Here, we have created a new NKT-deficient mouse strain using transcription activator-like effector nuclease (TALEN) technology to only disrupt the expression of Jα18, leaving the remaining Jα repertoire unperturbed. We confirm that these mice lack iNKT cells and do not respond to lipid antigen stimulation while the development of conventional T cells, regulatory T cells, and type Ib NKT cells is normal. This new mouse strain will serve as a new model of iNKT cell deficiency to facilitate our understanding of iNKT biology

Ka-Band Site Characterization of the NASA Near Earth Network in Svalbard, Norway

Critical to NASA s rapid migration toward Ka-Band is the comprehensive characterization of the communication channels at NASA's ground sites to determine the effects of the atmosphere on signal propagation and the network's ability to support various classes of users in different orbits. Accordingly, NASA has initiated a number of studies involving the ground sites of its Near Earth and Deep Space Networks. Recently, NASA concluded a memorandum of agreement (MOA) with the Norwegian Space Centre of the Kingdom of Norway and began a joint site characterization study to determine the atmospheric effects on Ka-Band links at the Svalbard Satellite Station in Norway, which remains a critical component of NASA s Near Earth Communication Network (NEN). System planning and design for Ka-band links at the Svalbard site cannot be optimally achieved unless measured attenuation statistics (e.g. cumulative distribution functions (CDF)) are obtained. In general, the CDF will determine the necessary system margin and overall system availability due to the atmospheric effects. To statistically characterize the attenuation statistics at the Svalbard site, NASA has constructed a ground-based monitoring station consisting of a multi-channel total power radiometer (25.5 - 26.5 GHz) and a weather monitoring station to continuously measure (at 1 second intervals) attenuation and excess noise (brightness temperature). These instruments have been tested in a laboratory environment as well as in an analogous outdoor climate (i.e. winter in Northeast Ohio), and the station was deployed in Svalbard, Norway in May 2011. The measurement campaign is planned to last a minimum of 3 years but not exceeding a maximum of 5 years

Zero-field spin splitting in InAs-AlSb quantum wells revisited

We present magnetotransport experiments on high-quality InAs-AlSb quantum wells that show a perfectly clean single-period Shubnikov-de Haas oscillation down to very low magnetic fields. In contrast to theoretical expectations based on an asymmetry induced zero-field spin splitting, no beating effect is observed. The carrier density has been changed by the persistent photo conductivity effect as well as via the application of hydrostatic pressure in order to influence the electric field at the interface of the electron gas. Still no indication of spin splitting at zero magnetic field was observed in spite of highly resolved Shubnikov- de Haas oscillations up to filling factors of 200. This surprising and unexpected result is discussed in view of other recently published data.Comment: 4 pages, 3 figures, submitted to Phys. Rev.

Surface waves in photonic crystal slabs

Photonic crystals with a finite size can support surface modes when appropriately terminated. We calculate the dispersion curves of surface modes for different terminations using the plane wave expansion method. These non-radiative surface modes can be excited with the help of attenuated total reflection technique. We did experiments and simulations to trace the surface band curve, both in good agreement with the numerical calculations

Fabrication and Characterization of PZT Thin-Film on Bulk Micromachined Si Motion Detectors

Motion detectors consisting of Pb(Zr{sub x}Ti{sub (1{minus}x)})O{sub 3} (PZT) thin films, between platinum electrodes, on micromachined silicon compound clamped-clamped or cantilever beam structures were fabricated using either hot KOH or High Aspect Ratio Silicon Etching (HARSE) to micromachine the silicon. The beams were designed such that a thicker region served as a test mass that produced stress at the top of the membrane springs that supported it when the object to which the detector was mounted moved. The PZT film devices were placed on these membranes to generate a charge or a voltage in response to the stress through the piezoelectric effect. Issues of integration of the PZT device fabrication process with the two etching processes are discussed. The effects of PZT composition and device geometry on the response of the detectors to motion is reported and discussed