20 K superconductivity in heavily electron doped surface layer of FeSe bulk crystal

A superconducting transition temperature Tc as high as 100 K was recently discovered in 1 monolayer (1ML) FeSe grown on SrTiO3 (STO). The discovery immediately ignited efforts to identify the mechanism for the dramatically enhanced Tc from its bulk value of 7 K. Currently, there are two main views on the origin of the enhanced Tc; in the first view, the enhancement comes from an interfacial effect while in the other it is from excess electrons with strong correlation strength. The issue is controversial and there are evidences that support each view. Finding the origin of the Tc enhancement could be the key to achieving even higher Tc and to identifying the microscopic mechanism for the superconductivity in iron-based materials. Here, we report the observation of 20 K superconductivity in the electron doped surface layer of FeSe. The electronic state of the surface layer possesses all the key spectroscopic aspects of the 1ML FeSe on STO. Without any interface effect, the surface layer state is found to have a moderate Tc of 20 K with a smaller gap opening of 4 meV. Our results clearly show that excess electrons with strong correlation strength alone cannot induce the maximum Tc, which in turn strongly suggests need for an interfacial effect to reach the enhanced Tc found in 1ML FeSe/STO.Comment: 5 pages, 4 figure

Lattice modeling of excavation damage in argillaceous clay formations: Influence of deformation and strength anisotropy

This paper presents modeling of mechanical anisotropy in argillaceous rocks using an irregular lattice modeling approach, namely the rigid-body-spring network. To represent the mechanical anisotropy, new schemes are implemented in the modeling framework. The directionality of elastic deformation is resolved by modifying the element formulation with anisotropic elastic properties. The anisotropy of strength and failure characteristics is facilitated by adopting orientation-dependent failure criteria into the failure model. The verification of the improved modeling procedures is performed against theoretical model predictions for unconfined compression tests with various bedding orientations. Furthermore, excavation damage and fracturing processes in rock formations are simulated for different geomechanical configurations, such as rock anisotropy and tectonic heterogeneity. The simulated excavation damage characteristics are realistic and comparable with the actual field observation at a tunnel located in an argillaceous clay formation. The simulation results provide insights into the excavation damage zone phenomena with an explicit representation of fracturing processes

Z_{12-I} Orbifold Compactification toward SUSY Standard Model

We explain the orbifold compactification in string models and present a Z_{12-I} orbifold compactification toward supersymmetric standard models. We also point out an effective R-parity from this string construction. The VEVs of gauge singlets are chosen such that phenomenological constraints are satisfied.Comment: 13 pages with 5 figure. Talk presented at "CTP Symposium on SUSY at LHC", Cairo, 11-14 March 200

Variable domain transformation for linear PAC analysis of mixed-signal systems

This paper describes a method to perform linear AC analysis on mixed-signal systems which appear strongly nonlinear in the voltage domain but are linear in other variable domains. Common circuits like phase/delay-locked loops and duty-cycle correctors fall into this category, since they are designed to be linear with respect to phases, delays, and duty-cycles of the input and output clocks, respectively. The method uses variable domain translators to change the variables to which the AC perturbation is applied and from which the AC response is measured. By utilizing the efficient periodic AC (PAC) analysis available in commercial RF simulators, the circuit’s linear transfer function in the desired variable domain can be characterized without relying on extensive transient simulations. Furthermore, the variable domain translators enable the circuits to be macromodeled as weakly-nonlinear systems in the chosen domain and then converted to voltage-domain models, instead of being modeled as strongly-nonlinear systems directly

Compositional changes on GaN surfaces under low-energy ion bombardment studied by synchrotron-based spectroscopies

We have investigated compositional changes on GaNsurfaces under Ar-ion bombardment using synchrotron-based high-resolution x-rayphotoemission (PES) and near-edge x-ray absorption fine structure(NEXAFS)spectroscopy. The low-energy ion bombardment of GaN produces a Ga-rich surface layer which transforms into a metallic Ga layer at higher bombarding energies. At the same time, the photoemissionspectra around N 1s core levels reveal the presence of both uncoordinated nitrogen and nitrogen interstitials, which we have analyzed in more details by x-rayabsorption measurements at N K edge. We have demonstrated that PES and NEXAFS provide a powerful combination for studying the compositional changes on GaNsurfaces. A mechanism for the relocation and loss of nitrogen during ion bombardment in agreement with some recent experimental and theoretical studies of defect formation in GaN has been proposed.P.N.K.D. is grateful for the financial support of the Australian Research Council

Fast, non-monte-carlo estimation of transient performance variation due to device mismatch

This paper describes an efficient way of simulating the effects of device random mismatch on circuit transient characteristics, such as variations in delay or in frequency. The proposed method models DC random offsets as equivalent AC pseudo-noises and leverages the fast, linear periodically time-varying (LPTV) noise analysis available from RF circuit simulators. Therefore, the method can be considered as an extension to DC match analysis and offers a large speed-up compared to the traditional Monte-Carlo analysis. Although the assumed linear perturbation model is valid only for small variations, it enables easy ways to estimate correlations among variations and identify the most sensitive design parameters to mismatch, all at no additional simulation cost. Three benchmarks measuring the variations in the input offset voltage of a clocked comparator, the delay of a logic path, and the frequency of an oscillator demonstrate the speed improvement of about 100-1000x compared to a 1000-point Monte-Carlo method