4,890 research outputs found

    Stress response function of a two-dimensional ordered packing of frictional beads

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    We study the stress profile of an ordered two-dimensional packing of beads in response to the application of a vertical overload localized at its top surface. Disorder is introduced through the Coulombic friction between the grains which gives some indeterminacy and allows the choice of one constrained random number per grain in the calculation of the contact forces. The so-called `multi-agent' technique we use, lets us deal with systems as large as 1000×10001000\times1000 grains. We show that the average response profile has a double peaked structure. At large depth zz, the position of these peaks grows with czcz, while their widths scales like Dz\sqrt{Dz}. cc and DD are analogous to `propagation' and `diffusion' coefficients. Their values depend on that of the friction coefficient μ\mu. At small μ\mu, we get c0cμc_0-c \propto \mu and DμβD \propto \mu^\beta, with β2.5\beta \sim 2.5, which means that the peaks get closer and wider as the disorder gets larger. This behavior is qualitatively what was predicted in a model where a stochastic relation between the stress components is assumed.Comment: 7 pages, 7 figures, accepted version to Europhys. Let

    Spin precession and inverted Hanle effect in a semiconductor near a finite-roughness ferromagnetic interface

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    Although the creation of spin polarization in various non-magnetic media via electrical spin injection from a ferromagnetic tunnel contact has been demonstrated, much of the basic behavior is heavily debated. It is reported here for semiconductor/Al2O3/ferromagnet tunnel structures based on Si or GaAs that local magnetostatic fields arising from interface roughness dramatically alter and even dominate the accumulation and dynamics of spins in the semiconductor. Spin precession in the inhomogeneous magnetic fields is shown to reduce the spin accumulation up to tenfold, and causes it to be inhomogeneous and non-collinear with the injector magnetization. The inverted Hanle effect serves as experimental signature. This interaction needs to be taken into account in the analysis of experimental data, particularly in extracting the spin lifetime and its variation with different parameters (temperature, doping concentration). It produces a broadening of the standard Hanle curve and thereby an apparent reduction of the spin lifetime. For heavily doped n-type Si at room temperature it is shown that the spin lifetime is larger than previously determined, and a new lower bound of 0.29 ns is obtained. The results are expected to be general and occur for spins near a magnetic interface not only in semiconductors but also in metals, organic and carbon-based materials including graphene, and in various spintronic device structures.Comment: Final version, with text restructured and appendices added (25 pages, 9 figures). To appear in Phys. Rev.

    Pulsar Wind Nebulae in the SKA era

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    Neutron stars lose the bulk of their rotational energy in the form of a pulsar wind: an ultra-relativistic outflow of predominantly electrons and positrons. This pulsar wind significantly impacts the environment and possible binary companion of the neutron star, and studying the resultant pulsar wind nebulae is critical for understanding the formation of neutron stars and millisecond pulsars, the physics of the neutron star magnetosphere, the acceleration of leptons up to PeV energies, and how these particles impact the interstellar medium. With the SKA1 and the SKA2, it could be possible to study literally hundreds of PWNe in detail, critical for understanding the many open questions in the topics listed above.Comment: Comments: 10 pages, 3 figures, to be published in: "Advancing Astrophysics with the Square Kilometre Array", Proceedings of Science, PoS(AASKA14

    Design, Optimization and Calibration of an Automated Density Gauge for Firn and Ice Cores

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    A gamma-ray density gauge can provide high-resolution and high-precision density measurements of firn and ice cores. This study describes the design, gamma-ray energy optimization and mass attenuation coefficient calibration of the Maine Automated Density Gauge Experiment (MADGE), a portable, field-operable gamma-ray density gauge used on overland traverses in East Antarctica. The MADGE instrument uses a (241)Am gamma-ray source, a pulse-mode counting system and electronic core diameter calipers to collect high-precision (+/- 0.004 g cm(-3)) density data from 3-8 cm diameter firn and ice cores. The data are collected at a 3.3 mm spatial resolution and an average throughput of 1.5 m h(-1) for 5 cm diameter cores

    Electrical spin injection and detection in Germanium using three terminal geometry

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    In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al2_{2}O3_{3} spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al2_{2}O3_{3}/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.Comment: 4 pages, 3 figure

    Electrical and thermal spin accumulation in germanium

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    In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions of spin diffusion models. Then by setting a temperature gradient between germanium and the ferromagnet, we create a thermal spin accumulation in germanium without any tunnel charge current. We show that temperature gradients yield larger spin accumulations than pure electrical spin injection but, due to competing microscopic effects, the thermal spin accumulation in germanium remains surprisingly almost unchanged under the application of a gate voltage to the channel.Comment: 7 pages, 3 figure

    Crossover from spin accumulation into interface states to spin injection in the germanium conduction band

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    Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunnel junction into a semiconductor is still under debate. In this letter, we demonstrate a clear transition from spin accumulation into interface states to spin injection in the conduction band of nn-Ge. We observe spin signal amplification at low temperature due to spin accumulation into interface states followed by a clear transition towards spin injection in the conduction band from 200 K up to room temperature. In this regime, the spin signal is reduced down to a value compatible with spin diffusion model. More interestingly, we demonstrate in this regime a significant modulation of the spin signal by spin pumping generated by ferromagnetic resonance and also by applying a back-gate voltage which are clear manifestations of spin current and accumulation in the germanium conduction band.Comment: 5 pages, 4 figure
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