On the dependability and feasibility of layperson ratings of divergent thinking

A new system for subjective rating of responses to divergent thinking tasks was tested using raters recruited from Amazon Mechanical Turk. The rationale for the study was to determine if such raters could provide reliable (aka generalizable) ratings from the perspective of generalizability theory. To promote reliability across the Alternative Uses and Consequence task prompts often used by researchers as measures of Divergent Thinking, two parallel scales were developed to facilitate feasibility and validity of ratings performed by laypeople. Generalizability and dependability studies were conducted separately for two scoring systems: the average-rating system and the snapshot system. Results showed that it is difficult to achieve adequate reliability using the snapshot system, while good reliability can be achieved on both task families using the average-rating system and a specific number of items and raters. Additionally, the construct validity of the average-rating system is generally good, with less validity for certain Consequences items. Recommendations for researchers wishing to adopt the new scales are discussed, along with broader issues of generalizability of subjective creativity ratings. © 2018 Hass, Rivera and Silvia

Proof of the Double Bubble Conjecture in R^n

The least-area hypersurface enclosing and separating two given volumes in R^n is the standard double bubble.Comment: 20 pages, 22 figure

The Computational Complexity of Knot and Link Problems

We consider the problem of deciding whether a polygonal knot in 3-dimensional Euclidean space is unknotted, capable of being continuously deformed without self-intersection so that it lies in a plane. We show that this problem, {\sc unknotting problem} is in {\bf NP}. We also consider the problem, {\sc unknotting problem} of determining whether two or more such polygons can be split, or continuously deformed without self-intersection so that they occupy both sides of a plane without intersecting it. We show that it also is in NP. Finally, we show that the problem of determining the genus of a polygonal knot (a generalization of the problem of determining whether it is unknotted) is in {\bf PSPACE}. We also give exponential worst-case running time bounds for deterministic algorithms to solve each of these problems. These algorithms are based on the use of normal surfaces and decision procedures due to W. Haken, with recent extensions by W. Jaco and J. L. Tollefson.Comment: 32 pages, 1 figur

Radiation tolerant back biased CMOS VLSI

A CMOS circuit formed in a semiconductor substrate having improved immunity to total ionizing dose radiation, improved immunity to radiation induced latch up, and improved immunity to a single event upset. The architecture of the present invention can be utilized with the n-well, p-well, or dual-well processes. For example, a preferred embodiment of the present invention is described relative to a p-well process wherein the p-well is formed in an n-type substrate. A network of NMOS transistors is formed in the p-well, and a network of PMOS transistors is formed in the n-type substrate. A contact is electrically coupled to the p-well region and is coupled to first means for independently controlling the voltage in the p-well region. Another contact is electrically coupled to the n-type substrate and is coupled to second means for independently controlling the voltage in the n-type substrate. By controlling the p-well voltage, the effective threshold voltages of the n-channel transistors both drawn and parasitic can be dynamically tuned. Likewise, by controlling the n-type substrate, the effective threshold voltages of the p-channel transistors both drawn and parasitic can also be dynamically tuned. Preferably, by optimizing the threshold voltages of the n-channel and p-channel transistors, the total ionizing dose radiation effect will be neutralized and lower supply voltages can be utilized for the circuit which would result in the circuit requiring less power

Apparatus for and method of eliminating single event upsets in combinational logic

An apparatus for and method of eliminating single event upsets (or SEU) in combinational logic are used to prevent error propagation as a result of cosmic particle strikes to the combinational logic. The apparatus preferably includes a combinational logic block electrically coupled to a delay element, a latch and an output buffer. In operation, a signal from the combinational logic is electrically coupled to a first input of the latch. In addition, the signal is routed through the delay element to produce a delayed signal. The delayed signal is routed to a second input of the latch. The latch used in the apparatus for preventing SEU preferably includes latch outputs and a feature that the latch outputs will not change state unless both latch inputs are correct. For example, the latch outputs may not change state unless both latch inputs have the same logical state. When a cosmic particle strikes the combinational logic, a transient disturbance with a predetermined length may appear in the signal. However, a function of the delay element is to preferably provide a time delay greater than the length of the transient disturbance. Therefore, the transient disturbance will not reach both latch inputs simultaneously. As a result, the latch outputs will not permanently change state in error due to the transient disturbance. In addition, the output buffer preferably combines the latch outputs in such a way that the correct state is preserved at all times. Thus, combinational logic with protection from SEU is provided

A comparative DFT study of electronic properties of 2H-, 4H- and 6H-SiC(0001) and SiC(000-1) clean surfaces: Significance of the surface Stark effect

Electric field, uniform within the slab, emerging due to Fermi level pinning at its both sides is analyzed using DFT simulations of the SiC surface slabs of different thickness. It is shown that for thicker slab the field is nonuniform and this fact is related to the surface state charge. Using the electron density and potential profiles it is proved that for high precision simulations it is necessary to take into account enough number of the Si-C layers. We show that using 12 diatomic layers leads to satisfactory results. It is also demonstrated that the change of the opposite side slab termination, both by different type of atoms or by their location, can be used to adjust electric field within the slab, creating a tool for simulation of surface properties, depending on the doping in the bulk of semiconductor. Using these simulations it was found that, depending on the electric field, the energy of the surface states changes in a different way than energy of the bulk states. This criterion can be used to distinguish Shockley and Tamm surface states. The electronic properties, i.e. energy and type of surface states of the three clean surfaces: 2H-, 4H-, 6H-SiC(0001), and SiC($000 \bar{1}$) are analyzed and compared using field dependent DFT simulations.Comment: 18 pages, 10 figures, 4 table

Noncyclic covers of knot complements

Hempel has shown that the fundamental groups of knot complements are residually finite. This implies that every nontrivial knot must have a finite-sheeted, noncyclic cover. We give an explicit bound, $\Phi (c)$, such that if $K$ is a nontrivial knot in the three-sphere with a diagram with $c$ crossings and a particularly simple JSJ decomposition then the complement of $K$ has a finite-sheeted, noncyclic cover with at most $\Phi (c)$ sheets.Comment: 29 pages, 8 figures, from Ph.D. thesis at Columbia University; Acknowledgments added; Content correcte

Highly-ordered graphene for two dimensional electronics

With expanding interest in graphene-based electronics, it is crucial that high quality graphene films be grown. Sublimation of Si from the 4H-SiC(0001) Si-terminated) surface in ultrahigh vacuum is a demonstrated method to produce epitaxial graphene sheets on a semiconductor. In this paper we show that graphene grown from the SiC$(000\bar{1})$ (C-terminated) surface are of higher quality than those previously grown on SiC(0001). Graphene grown on the C-face can have structural domain sizes more than three times larger than those grown on the Si-face while at the same time reducing SiC substrate disorder from sublimation by an order of magnitude.Comment: Submitted to Appl. Phys. Let

Deep far infrared ISOPHOT survey in "Selected Area 57", I. Observations and source counts

We present here the results of a deep survey in a 0.4 sq.deg. blank field in Selected Area 57 conducted with the ISOPHOT instrument aboard ESAs Infrared Space Observatory (ISO) at both 60 um and 90 um. The resulting sky maps have a spatial resolution of 15 x 23 sq.arcsec. per pixel which is much higher than the 90 x 90 sq.arcsec. pixels of the IRAS All Sky Survey. We describe the main instrumental effects encountered in our data, outline our data reduction and analysis scheme and present astrometry and photometry of the detected point sources. With a formal signal to noise ratio of 6.75 we have source detection limits of 90 mJy at 60 um and 50 mJy at 90 um. To these limits we find cumulated number densities of 5+-3.5 per sq.deg. at 60 um and 14.8+-5.0 per sq.deg.at 90 um. These number densities of sources are found to be lower than previously reported results from ISO but the data do not allow us to discriminate between no-evolution scenarios and various evolutionary models.Comment: 15 pages, 11 figures, accepted by Astronomy & Astrophysic