Stability of Horava-Lifshitz Black Holes in the Context of AdS/CFT

The anti--de Sitter/conformal field theory (AdS/CFT) correspondence is a powerful tool that promises to provide new insights toward a full understanding of field theories under extreme conditions, including but not limited to quark-gluon plasma, Fermi liquid and superconductor. In many such applications, one typically models the field theory with asymptotically AdS black holes. These black holes are subjected to stringy effects that might render them unstable. Ho\v{r}ava-Lifshitz gravity, in which space and time undergo different transformations, has attracted attentions due to its power-counting renormalizability. In terms of AdS/CFT correspondence, Ho\v{r}ava-Lifshitz black holes might be useful to model holographic superconductors with Lifshitz scaling symmetry. It is thus interesting to study the stringy stability of Ho\v{r}ava-Lifshitz black holes in the context of AdS/CFT. We find that uncharged topological black holes in $\lambda=1$ Ho\v{r}ava-Lifshitz theory are nonperturbatively stable, unlike their counterparts in Einstein gravity, with the possible exceptions of negatively curved black holes with detailed balance parameter $\epsilon$ close to unity. Sufficiently charged flat black holes for $\epsilon$ close to unity, and sufficiently charged positively curved black holes with $\epsilon$ close to zero, are also unstable. The implication to the Ho\v{r}ava-Lifshitz holographic superconductor is discussed.Comment: 15 pages, 6 figures. Updated version accepted by Phys. Rev. D, with corrections to various misprints. References update

Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi2_2Se3_3

We report a transport study of exfoliated few monolayer crystals of topological insulator Bi$_2$Se$_3$ in an electric field effect (EFE) geometry. By doping the bulk crystals with Ca, we are able to fabricate devices with sufficiently low bulk carrier density to change the sign of the Hall density with the gate voltage $V_g$. We find that the temperature $T$ and magnetic field dependent transport properties in the vicinity of this $V_g$ can be explained by a bulk channel with activation gap of approximately 50 meV and a relatively high mobility metallic channel that dominates at low $T$. The conductance (approximately 2 $\times$ 7$e^2/h$), weak anti-localization, and metallic resistance-temperature profile of the latter lead us to identify it with the protected surface state. The relative smallness of the observed gap implies limitations for EFE topological insulator devices at room temperature.Comment: 4 pages, 4 figures. In new version, panels have been removed from Figures 1, 2, and 4 to improve clarity. Additional data included in Figure 4. Introduction and discussion revised and expande

Kinetic Equation for a Plasma and Its Application to High-frequency Conductivity

Kinetic equation for inhomogenious nonisotropic plasma and application to high frequency conductivit

Empires and Percolation: Stochastic Merging of Adjacent Regions

We introduce a stochastic model in which adjacent planar regions $A, B$ merge stochastically at some rate $\lambda(A,B)$, and observe analogies with the well-studied topics of mean-field coagulation and of bond percolation. Do infinite regions appear in finite time? We give a simple condition on $\lambda$ for this {\em hegemony} property to hold, and another simple condition for it to not hold, but there is a large gap between these conditions, which includes the case $\lambda(A,B) \equiv 1$. For this case, a non-rigorous analytic argument and simulations suggest hegemony.Comment: 13 page

Reply to ``Comment on `Insulating Behavior of λ\lambda-DNA on the Micron Scale' "

In our experiment, we found that the resistance of vacuum-dried $\lambda$-DNA exceeds $10^{14} \Omega$ at 295 K. Bechhoefer and Sen have raised a number of objections to our conclusion. We provide counter arguments to support our original conclusion.Comment: 1 page reply to comment, 1 figur

Dissipationless Anomalous Hall Current in the Ferromagnetic Spinel CuCr2_2Se4−x_{4-x}Brx_x

In a ferromagnet, an applied electric field $\bf E$ invariably produces an anomalous Hall current ${\bf J}_H$ that flows perpendicular to the plane defined by $\bf E$ and $\bf M$ (the magnetization). For decades, the question whether ${\bf J}_H$ is dissipationless (independent of the scattering rate), has been keenly debated without experimental resolution. In the ferromagnetic spinel CuCr$_2$Se$_{4-x}$Br$_x$, the resistivity $\rho$ (at low temperature) may be increased 1000 fold by varying $x$(Br), without degrading the $\bf M$. We show that ${\bf J}_H/E$ (normalized per carrier, at 5 K) remains unchanged throughout. In addition to resolving the controversy experimentally, our finding has strong bearing on the generation and study of spin-Hall currents in bulk samples.Comment: 7 pages, 6 figure