1,619 research outputs found
Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields
A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures
is presented. The nonlinear dependence of the capacitance on the gate voltage
and in-plane magnetic field is discussed together with the capacitance quantum
steps connected with a population of higher 2D gas subbands. The results of
full self-consistent numerical calculations are compared to recent experimental
data.Comment: 4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file
available upon request. Phys. Rev.B, in pres
Resistance spikes and domain wall loops in Ising quantum Hall ferromagnets
We explain the recent observation of resistance spikes and hysteretic
transport properties in Ising quantum Hall ferromagnets in terms of the unique
physics of their domain walls. Self-consistent RPA/Hartree-Fock theory is
applied to microscopically determine properties of the ground state and
domain-wall excitations. In these systems domain wall loops support
one-dimensional electron systems with an effective mass comparable to the bare
electron mass and may carry charge. Our theory is able to account
quantitatively for the experimental Ising critical temperature and to explain
characteristics of the resistive hysteresis loops.Comment: 4 pages, 3 figure
Co-planar spin-polarized light emitting diode
Studies of spin manipulation in semiconductors has benefited from the
possibility to grow these materials in high quality on top of optically active
III-V systems. The induced electroluminescence in these layered semiconductor
heterostructures has been used for a reliable spin detection. In semiconductors
with strong spin-orbit interaction, the sensitivity of vertical devices may be
insufficient, however, because of the sepration of the spin aligner part and
the spin detection region by one or more heterointerfaces and becuse of the
short spin coherence length. Here we demostrate that higly sensitive spin
detection can be achieved using a lateral arrangement of the spin polarized and
optically active regions. Using our co-planar spin-polarized light emitting
diodes we detect electrical field induced spin generation in a semiconductor
heterojunction two-dimensional hole gas. The polarization results from spin
asymmetric recombination of injected electrons with strongly SO coupled
two-dimensional holes. The possibility to detect magnetized Co particles
deposited on the co-planar diode structure is also demonstrated.Comment: 8 pages, 3 figure
Large Tunneling Anisotropic Magneto-Seebeck Effect in a CoPt|MgO|Pt Tunnel Junction
We theoretically investigate the Tunneling Anisotropic Magneto-Seebeck effect
in a realistically-modeled CoPt|MgO|Pt tunnel junction using coherent transport
calculations. For comparison we study the tunneling magneto-Seebeck effect in
CoPt|MgO|CoPt as well. We find that the magneto-Seebeck ratio of CoPt|MgO|Pt
exceeds that of CoPt|MgO|CoPt for small barrier thicknesses, reaching 175% at
room temperature. This result provides a sharp contrast to the
magnetoresistance, which behaves oppositely for all barrier thicknesses and
differs by one order of magnitude between devices. Here the magnetoresistance
results from differences in transmission brought upon by changing the tunnel
junction's magnetization configuration. The magneto-Seebeck effect results from
variations in asymmetry of the energy-dependent transmission instead. We report
that this difference in origin allows for CoPt|MgO|Pt to possess strong thermal
magnetic-transport anisotropy.Comment: 6 pages, 6 figure
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