Anisotropic Electron Spin Lifetime in (In,Ga)As/GaAs (110) Quantum Wells

Anisotropic electron spin lifetimes in strained undoped (In,Ga)As/GaAs (110) quantum wells of different width and height are investigated by time-resolved Faraday rotation and time-resolved transmission and are compared to the (001)-orientation. From the suppression of spin precession, the ratio of in-plane to out-of-plane spin lifetimes is calculated. Whereas the ratio increases with In concentration in agreement with theory, a surprisingly high anisotropy of 480 is observed for the broadest quantum well, when expressed in terms of spin relaxation times.Comment: 4 pages, 4 figures, revise

Dimethylpropyleneurea-water mixtures .1. Physical-properties.

Densities, refractive indices, viscosities, dielectric constants and the absorptions of several solvatochromic indicators have been determined at 25°C for mixtures of N,N′-dimethyl-N,N′-propyleneurea (DMPU) and water in the complete mole fraction scale. the results are compared with the properties of hexamethylphosphotriamide (HMPT) and its mixtures with water which show a striking similarity to DMPU and its mixtures with water. Since HMPT was found to be carcinogenic in animal tests, DMPU offers a suitable substitute since it may be regarded as safe under laboratory conditions

In situ x-ray diffraction study of epitaxial growth of ordered Fe3Si films

Molecular beam epitaxy of Fe3Si on GaAs(001) is studied in situ by grazing incidence x-ray diffraction. Layer-by-layer growth of Fe3Si films is observed at a low growth rate and substrate temperatures near 200 degrees Celsius. A damping of x-ray intensity oscillations due to a gradual surface roughening during growth is found. The corresponding sequence of coverages of the different terrace levels is obtained. The after-deposition surface recovery is very slow. Annealing at 310 degrees Celsius combined with the deposition of one monolayer of Fe3Si restores the surface to high perfection and minimal roughness. Our stoichiometric films possess long-range order and a high quality heteroepitaxial interface.Comment: 8 pages, 3 figure

Charge transfer and coherence dynamics of tunnelling system coupled to a harmonic oscillator

We study the transition probability and coherence of a two-site system, interacting with an oscillator. Both properties depend on the initial preparation. The oscillator is prepared in a thermal state and, even though it cannot be considered as an extended bath, it produces decoherence because of the large number of states involved in the dynamics. In the case in which the oscillator is intially displaced a coherent dynamics of change entangled with oscillator modes takes place. Coherency is however degraded as far as the oscillator mass increases producing a increasingly large recoherence time. Calculations are carried on by exact diagonalization and compared with two semiclassical approximations. The role of the quantum effects are highlighted in the long-time dynamics, where semiclassical approaches give rise to a dissipative behaviour. Moreover, we find that the oscillator dynamics has to be taken into account, even in a semiclassical approximation, in order to reproduce a thermally activated enhancement of the transition probability

Lattice matched Volmer–Weber growth of Fe3Si on GaAs(001) - the influence of the growth rate

We investigate the formation of lattice matched single-crystalline Fe3Si/GaAs(001) ferromagnet/semiconductor hybrid structures by Volmer-Weber island growth, starting from the epitaxial growth of isolated Fe3Si islands up to the formation of continuous films as a result of island coalescence. We find coherent defect-free layers exhibiting compositional disorder near the Fe3Si/GaAs - interface for higher growth rates, whereas they are fully ordered for lower growth rates. © 2019 IOP Publishing Ltd