Strategies, methods and tools for managing nanorisks in construction

This paper presents a general overview of the work carried out by European project SCAFFOLD (GA 280535) during its 30 months of life, with special emphasis on risk management component. The research conducted by SCAFFOLD is focused on the European construction sector and considers 5 types of nanomaterials (TiO2, SiO2, carbon nanofibres, cellulose nanofibers and nanoclays), 6 construction applications (Depollutant mortars, selfcompacting concretes, coatings, self-cleaning coatings, fire resistant panels and insulation materials) and 26 exposure scenarios, including lab, pilot and industrial scales. The document focuses on the structure, content and operation modes of the Risk Management Toolkit developed by the project to facilitate the implementation of "nano-management" in construction companies. The tool deploys and integrated approach OHSAS 18001 - ISO 31000 and is currently being validated on 5 industrial case studies.Research carried out by project SCAFFOLD was made possible thanks to funding from the European Commission, through the Seventh Framework Programme (GA 280535

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

National audienc

Low-temperature characterization and modeling of advanced GeOI pMOSFETs : mobility mechanism and origin of the parasitic conduction

International audienc

Advanced pMOSFET on germanium-on-insulator : low temperature properties.

National audienc

Low-temperature measurements on Germanium-on-Insulator pMOSFETs: evaluation of the background doping level

International audienc

GeOI as a platform for ultimate devices.

International audienc

Ultrahigh speed germanium-on-silicon-on-insulator photodetectors for 1.31 and 1.55μm operation

International audienceWe report the fabrication and the characterization of interdigited metal-germanium on silicon metal photodetectors (metal-semiconductor-metal or MSM) for operation at both optical telecommunication wavelengths: 1.31 and 1.55μm. Femtosecond impulse and frequency experiments have been carried out to characterize those MSM Ge photodetectors. For both wavelengths, the measured 3dB bandwidth under 2V bias are close to 10, 18, 20, and 35GHz for electrode spacings equal to 2000, 1000, 700, and 500nm, respectively

Characterization of photocatalytic paints: a relationship between the photocatalytic properties – release of nanoparticles and volatile organic compounds

International audienc

Review of some critical aspects of Ge and GeOI substrates

International audienceThe challenges posed by the scaling of Silicon (Si) devices make mandatory the study of new materials to overcome the physical limitations of the Si. Germanium (Ge) was actually used in the first transistors but was then abandoned in favour of Si due to difficulties in processing Ge Oxide. However, the introduction of high-K gate dielectrics makes the use of Ge possible in an advanced technology. Its benefits for MOSFET applications are important: better transport properties than with Silicon hence higher saturation currents; lower band gap hence lower supply voltages and lower power dissipation and a lattice parameter compatible with Gallium Arsenide (GaAs) epitaxy. These are the main reasons why, during the last 4 years, the interest in Ge and Ge-On-Insulator (GeOI) substrates fabrication and properties has grown. This paper is a review of the different types of Ge and GeOI substrates, their critical aspects and their new potential applications