Electrical spin injection and detection in Germanium using three terminal geometry

In this letter, we report on successful electrical spin injection and detection in \textit{n}-type germanium-on-insulator (GOI) using a Co/Py/Al$_{2}$O$_{3}$ spin injector and 3-terminal non-local measurements. We observe an enhanced spin accumulation signal of the order of 1 meV consistent with the sequential tunneling process via interface states in the vicinity of the Al$_{2}$O$_{3}$/Ge interface. This spin signal is further observable up to 220 K. Moreover, the presence of a strong \textit{inverted} Hanle effect points at the influence of random fields arising from interface roughness on the injected spins.Comment: 4 pages, 3 figure

Tuning the electrostatic properties of silicon-on-insulating multilayer (SOIM) structures

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Single-crystal based composite wafers for high quality passive RF microdevices

International audienceNew guiding principles and concepts are currently investigated for developing high frequency devices capable to answer the RF manufacturer demand for telecommunication an remote transmission modern components. Beside the use of physically or chemically deposited piezoelectric overlays, the use of composite wafers composed by single crystal layers and wafers obtained by wafer bonding and lapping/polishing techniques offers attractive opportunities for overpassing the known limitations of acoustics-based radio-frequency devices. In this paper, we present different approaches for manufacturing such composite wafers and we describe different applications taking advantage of their unique characteristics. Lithium niobate is particularly considered for the piezoelectric layers because of its exceptional piezoelectric properties and its very high acoustic quality, and various substrate such as silicon, sapphire and lithium niobate again are used to guide and trap the excited waves. State-of-the-art Surface Acoustic Wave (SAW) devices, Harmonic Bulk Acoustic Resonators (HBARS) and Periodically Poled Transducers developed on such wafers are presented to illustrate the potential of this technological approach