1,538 research outputs found
Quantum confinement corrections to the capacitance of gated one-dimensional nanostructures
With the help of a multi-configurational Green's function approach we
simulate single-electron Coulomb charging effects in gated ultimately scaled
nanostructures which are beyond the scope of a selfconsistent mean-field
description. From the simulated Coulomb-blockade characteristics we derive
effective system capacitances and demonstrate how quantum confinement effects
give rise to corrections. Such deviations are crucial for the interpretation of
experimentally determined capacitances and the extraction of
application-relevant system parameters
Direct and Heterodyne Detection of Microwaves in a Metallic Single Wall Carbon Nanotube
This letter reports measurements of microwave (up to 4.5 GHz) detection in
metallic single-walled carbon nanotubes. The measured voltage responsivity was
found to be 114 V/W at 77K. We also demonstrated heterodyne detection at 1 GHz.
The detection mechanism can be explained based on standard microwave detector
theory and the nonlinearity of the DC IV-curve. We discuss the possible causes
of this nonlinearity. While the frequency response is limited by circuit
parasitics in this measurement, we discuss evidence that indicates that the
effect is much faster and that applications of carbon nanotubes as terahertz
detectors are feasible
9286 Stars: An Agglomeration of Stellar Polarization Catalogs
This is a revision. The revisions are minor. The new version of the catalog
should be used in preference to the old. The most serious error in the older
version was that was incorrect, being sometimes far too large,
for Reiz and Franco entries; the correct values are all zero for that
reference.
We present an agglomeration of stellar polarization catalogs with results for
9286 stars. We have endeavored to eliminate errors, provide accurate
(arcsecond) positions, sensibly weight multiple observations of the same star,
and provide reasonable distances. This catalog is included as an ASCII file
(catalog.txt) in the source of this submission.Comment: The most serious error in the older version was that
was incorrect, being sometimes far too large, for Reiz and Franco entries;
the correct values are all zero for that reference. 11 pages, no figures.
Accepted for Astronomical Journal. Catalog also available as an ASCII file by
anonymous FTP from ftp://vermi.berkeley.edu/pub/polcat/p14.ou
A Fully Tunable Single-Walled Carbon Nanotube Diode
We demonstrate a fully tunable diode structure utilizing a fully suspended
single-walled carbon nanotube (SWNT). The diode's turn-on voltage under forward
bias can be continuously tuned up to 4.3 V by controlling gate voltages, which
is ~6 times the nanotube bandgap energy. Furthermore, the same device design
can be configured into a backward diode by tuning the band-to-band tunneling
current with gate voltages. A nanotube backward diode is demonstrated for the
first time with nonlinearity exceeding the ideal diode. These results suggest
that a tunable nanotube diode can be a unique building block for developing
next generation programmable nanoelectronic logic and integrated circuits.Comment: 14 pages, 4 figure
On the Performance of Single-Gated Ultrathin-Body SOI Schottky-Barrier MOSFETs
The authors study the dependence of the performance of silicon-on-insulator (SOI) Schottky-barrier (SB) MOSFETs on the SOI body thickness and show a performance improvement for decreasing SOI thickness. The inverse subthreshold slopes S extracted from the experiments are compared with simulations and an analytical approximation. Excellent agreement between experiment, simulation, and analytical approximation is found, which shows that S scales approximately as the square root of the gate oxide and the SOI thickness. In addition, the authors study the impact of the SOI thickness on the variation of the threshold voltage V-th of SOI SB-MOSFETs and find a non-monotonic behavior of V-th. The results show that to avoid large threshold voltage variations and achieve high-performance devices, the gate oxide thickness should be as small as possible, and the SOI thickness should be similar to 3 nm
Lateral scaling in carbon nanotube field-effect transistors
We have fabricated carbon nanotube (CN) field-effect transistors with
multiple, individually addressable gate segments. The devices exhibit markedly
different transistor characteristics when switched using gate segments
controlling the device interior versus those near the source and drain. We
ascribe this difference to a change from Schottky barrier modulation at the
contacts to bulk switching. We also find that the current through the bulk
portion is independent of gate length for any gate voltage, offering direct
evidence for ballistic transport in semiconducting CNs over at least a few
hundred nanometers, even for relatively small carrier velocities.Comment: 4 pages, 4 figure
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