Fast physical models for Si LDMOS power transistor characterization

A new nonlinear, process-oriented, quasi-two-dimensional (Q2D) model is described for microwave laterally diffused MOS (LDMOS) power transistors. A set of one-dimensional energy transport equations are solved across a two-dimensional cross-section in a “current-driven” form. The model accounts for avalanche breakdown and gate conduction, and accurately predicts DC and microwave characteristics at execution speeds sufficiently fast for circuit simulation applications

A nonlinear electro-thermal model for high power RF LDMOS transistors

A new nonlinear, charge-conservative, dynamic electro-thermal compact model for LDMOS RF power transistors is described in this paper. The transistor is characterized using pulsed I-V and S-parameter measurements, to ensure isothermal conditions. The intrinsic model current and charge sources are obtained by integration of the real and imaginary components, respectively, of the small-signal Y-parameters: this yields a charge-conservative model by design. A thermal sub-circuit is used to introduce dynamic thermal dependence, and thermal threshold voltage shift is built in. DC and large-signal validation of the model is presented. © 2008 IEEE

Microwave Properties of 2D CMOS Compatible Co-Planar Waveguides Made from Phosphorus Dopant Monolayers in Silicon

Low-dimensional microwave interconnects have important applications for nanoscale electronics, from complementary metal–oxide-semiconductor (CMOS) to silicon quantum technologies. Graphene is naturally nanoscale and has already demonstrated attractive electronic properties, however its application to electronics is limited by available fabrication techniques and CMOS incompatibility. Here, the characteristics of transmission lines made from silicon doped with phosphorus are investigated using phosphine monolayer doping. S-parameter measurements are performed between 4–26 GHz from room temperature down to 4.5 K. At 20 GHz, the measured monolayer transmission line characteristics consist of an attenuation constant of 40 dB mm−1 and a characteristic impedance of 600 Ω. The results indicate that Si:P monolayers are a viable candidate for microwave transmission and that they have a.c. properties similar to graphene, with the additional benefit of extremely precise, reliable, stable, and inherently CMOS compatible fabrication

Perceived time is spatial frequency dependent

YesWe investigated whether changes in low-level image characteristics, in this case spatial frequency, were capable of generating a well-known expansion in the perceived duration of an infrequent “oddball” stimulus relative to a repeatedly-presented “standard” stimulus. Our standard and oddball stimuli were Gabor patches that differed from each other in spatial frequency by two octaves. All stimuli were equated for visibility. Rather than the expected “subjective time expansion” found in previous studies, we obtained an equal and opposite expansion or contraction of perceived time dependent upon the spatial frequency relationship of the standard and oddball stimulus. Subsequent experiments using equi-visible stimuli reveal that mid-range spatial frequencies (ca. 2 c/deg) are consistently perceived as having longer durations than low (0.5 c/deg) or high (8 c/deg) spatial frequencies, despite having the same physical duration. Rather than forming a fixed proportion of baseline duration, this bias is constant in additive terms and implicates systematic variations in visual persistence across spatial frequency. Our results have implications for the widely cited finding that auditory stimuli are judged to be longer in duration than visual stimuli.Wellcome Trust, UK, the Federation of Ophthalmic and Dispensing Opticians, UK, and the College of Optometrists, UK

Pragmatic Software Innovation

Part 2: Creating Value through Software DevelopmentInternational audienceWe understand software innovation as concerned with introducing innovation into the development of software intensive systems, i.e. systems in which software development and/or integration are dominant considerations. Innovation is key in almost any strategy for competitiveness in existing markets, for creating new markets, or for curbing rising public expenses, and software intensive systems are core elements in most such strategies. Software innovation therefore is vital for about every sector of the economy. Changes in software technologies over the last decades have opened up for experimentation, learning, and flexibility in ongoing software projects, but how can this change be used to facilitate software innovation? How can a team systematically identify and pursue opportunities to create added value in ongoing projects? In this paper, we describe Deweyan pragmatism as the philosophical foundation for Essence – a software innovation methodology – where unknown options and needs emerge as part of the development process itself. The foundation is illustrated via a simple example

Process-orientated physics-based modeling of microwave power transistors: Small- and large-signal characterization

The coupling between charge transport, heat and energy flow required to model high frequency power devices is developed in the context of a computationally efficient physics-based model, which has been successfully applied to microwave laterally diffused MOS transistors. The accurate prediction of small-and large-signal microwave characteristics, and the physical insight gained, can be used in the process-orientated optimization and process sensitivity analysis of LDMOS power FETs. The charge-based model is well-suited to non-linear CAD implementation for applications such as power amplifier design. © 2012 IEEE

An extrinsic component parameter extraction method for high power RF LDMOS transistors

A new extrinsic network and extrinsic parameter extraction methodology is developed for high power RF LDMOS transistor modeling. This new method uses accurate manifold deembedding using electromagnetic simulation, and optimization of the extrinsic network parameter values over a broad frequency range. The new extrinsic network accommodates feedback effects which are observed in high power transistors. This improved methodology allows us to achieve a good agreement between measured and modeled S-parameters in the frequency range of 0.5 to 6 GHz for different bias conditions. Large-signal verification of this new model shows a very good match with measurements at 2.14 GHz. © 2008 IEEE