18 research outputs found
Heat cycle failure point prediction by 3D thermal stress analysis for medium voltage power module
Get PDFTemperature distribution of 10 kV and 15 kV SiC-MOSFETs with large edge area
Get PDFThermal simulations evaluated temperature distribution of 10kV and 15kV SiC-MOSFETs with larger die edge areas. Experimental temperature measurements of the die surface confirmed thermal modeling. The results revealed that larger edges amplified die surface temperature variation compared to 1.2kV SiC-MOSFET. Simulation results also mentioned temperature variation of bond wires and solder during power cycle testing
Parasitic Capacitance Modeling of Copper-Foiled Medium-Voltage Filter Inductors Considering Fringe Electrical Field
Get PDFImpact of Power Module Parasitic Capacitances on Medium Voltage SiC MOSFETs Switching Transients
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Modeling and Design of a 1.2 pF Common-Mode Capacitance Transformer for Powering MV SiC MOSFETs Gate Drivers
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