19 research outputs found
Nonvolatile Memory Technology for Space Applications
This slide presentation reviews several forms of nonvolatile memory for use in space applications. The intent is to: (1) Determine inherent radiation tolerance and sensitivities, (2) Identify challenges for future radiation hardening efforts, (3) Investigate new failure modes and effects, and technology modeling programs. Testing includes total dose, single event (proton, laser, heavy ion), and proton damage (where appropriate). Test vehicles are expected to be a variety of non-volatile memory devices as available including Flash (NAND and NOR), Charge Trap, Nanocrystal Flash, Magnetic Memory (MRAM), Phase Change--Chalcogenide, (CRAM), Ferroelectric (FRAM), CNT, and Resistive RAM
Investigation of Current Spike Phenomena During Heavy Ion Irradiation of NAND Flash Memories
A series of heavy ion and laser irradiations were performed to investigate previously reported current spikes in flash memories. High current events were observed, however, none matches the previously reported spikes. Plausible mechanisms are discussed
Current Single Event Effects Compendium of Candidate Spacecraft Electronics for NASA
We present the results of single event effects (SEE) testing and analysis investigating the effects of radiation on electronics. This paper is a summary of test results
Investigation of High Current Events in Highly Scaled NAND Flash Memories
No abstract availabl
Compendium of Single-Event Latchup and Total Ionizing Dose Test Results of Commercial Analog to Digital Converters
This paper reports single-event latchup and total dose results for a variety of analog to digital converters targeted for possible use in NASA spacecraft's. The compendium covers devices tested over the last 15 years
Radiation Tests of Highly Scaled, High-Density, Commercial, Nonvolatile NAND Flash Memories - Update 2010
High-density, commercial, nonvolatile flash memories with NAND architecture are now available from several manufacturers. This report examines SEE effects and TID response in single-level cell (SLC) and multi-level cell (MLC) NAND flash memories manufactured by Micron Technology
Results of Single-event Effects Measurements Conducted by the Jet Propulsion Laboratory
This paper reports recent single-event effects results for a variety of microelectronic devices that include an ADC, DAC, supervisory circuit, FIFO and a Viterbi decoder. The data was collected to evaluate these devices for possible use in NASA spacecraft
Results of Single-Event Latchup Measurements Conducted by the Jet Propulsion Laboratory
This paper reports recent single-event latchup (SEL) results for a variety of microelectronic devices that include OpAmp, Voltage Reference, Motor Controller, Switch Mode Controller, Resolver-to-Digital Converter and Analog-to-Digital Converter. The data was collected to evaluate these devices for possible use in NASA spacecraft