Morphology and motion of the interface between amorphous and crystalline cobalt disilicide

Amorphous CoSi{sub 2} films were prepared by codeposition onto electron transparent silicon nitride window substrates. The deposits were crystallized in situ without further processing. Two sets of experiments were done: thermal crystallization and thermal crystallization with additional ion irradiation treatments before or during crystallization. The interface between the amorphous and crystalline material is rough on the scale of 20 nm with some tendency to facet. Irradiation by 1.5 MeV Kr ions stimulates both nucleation and growth at room temperature. Prior ion irradiation followed by heating in the absence of an ion-flux also enhances the nucleation and growth kinetics relative to a purely thermal treatment. 14 refs., 4 figs

IBM-Crosspad on-line handwriting database in STK format - donated exclusively to University of Groningen

This data was donated to AI Dept. RuG by IBM in 2007 It contains *.STK files (ASCII) containing on-line handwriting pen-tip coordinates (x,y). The format can be converted to unipen. For internal use at RuG only. You may request access to the files in this upload, provided that you fulfil the conditions below. The decision whether to grant/deny access is solely under the responsibility of the record owner