Coherent structures in an electron beam

The formation and evolution of coherent structures in a low-energy electron beam produced in a Malmberg-Penning trap is investigated by means of CCD diagnostics. The electrons are emitted from a thermionic cathode and their energy is controlled by an acceleration grid. By varying the spatial distribution of the energy of emitted electrons, different space charge effects are observed, as, e. g., a sharp or a gradual transition to a space charge dominated regime. The variation of the coherent structures along the beam is studied by varying the electron density or/and the value of the confined magnetic field. The observed processes are interpreted using a tridimensional particle-in-cell code which solves the Vlasov-Poisson system in zeroth order drift approximation.Comment: 12th International Congress on Plasma Physics, 25-29 October 2004, Nice (France

Method for passivating at least a part of a substrate surface

A method for passivating at least a part of a surface of a semiconductor substrate, wherein at least one layer comprising at least one a-Si:H passivation layer is realized on said part of the substrate surface by: - generating a plasma (P) by means of at least one plasma source (3) mounted on the process chamber (5) at a distance (L) from the substrate surface, at least part of the plasma (P) being injected into the chamber (5) and achieving a supersonic speed; - contacting at least a part of the plasma (P), injected into the chamber (5), with the said part of the substrate surface; and - supplying at least one precursor suitable for passivation layer realization to the said part of the plasma (P) via a plurality of injection nozzles (19) of an injector device (17), such that the density of the precursor at each injection nozzle (19) is lower than 12x1022 particles/m3

Expanding Thermal Plasma Deposition of a-Si:H Thin Films for Surface Passivation of c-Si Wafers,

We investigated the material properties of expanding thermal plasma deposited a-Si:H thin films, providing a record-low surface recombination velocity of 1.6 cm/s (at injection level of 1 1015 cm-3). a-Si:H thin films with different thicknesses have been deposited at a high deposition rate (1.2 nm/s) on both sides of low resistivity (1-5 Ohm cm), 260µm thick, n- and ptype c-Si FZ wafers. The material properties of a -Si:H films have been characterized by Fourier Transform Infrared diagnostic and Spectroscopic Ellipsometry. The surface passivation of the wafers has been determined by photoconductivity decay measurements of the effective carrier lifetime. The investigation points out that the growth of ETP a-Si:H films begins with the formation of a thin porous layer (<10 nm) with a refractive index of 3.9 (at 2 eV) and a microstructure parameter (R*) of 0.50. Despite the open network formation at the a-Si/c-Si interface, a 7 nm a-Si:H film achieves a recombination velocity as low as 12 cm/s (at 1·1015 cm-3 injection level on ntype wafers). The good passivation is probably due to the large hydrogen content of the a-Si:H film, which terminates dangling bonds present on the c-Si surface. After this initial growth, a dense a-Si:H network develops with a refractive index of 4.3 (at 2 eV) and R* = 0.03. The surface recombination velocity decresses linearly with the a-Si:H thickness, achieving a record value of 1.6 cm/s (at 1·1015 cm-3 injection level) for 90 nm thick a-Si film on n-type wafers. As compared to hot wire CVD and radiofrequency PECVD techniques, ETP is capable to deposit thin a-Si:H films with outstanding surface passivation at higher temperature (250° C) and higher deposition rate (1.2 nm/s). The stability in time of surface passivation has been investigated. Effective carrier lifetime is found to decrease following a stretched exponential. Photo-electronic properties of a-Si:H are know to relax in time in a similar fashion. These results therefore suggest a correlation between the photo-electronic roperties of the a-Si:H/c-Si interface and a-Si:H bulk material

Research Update: Atmospheric pressure spatial atomic layer deposition of ZnO thin films: Reactors, doping, and devices

Atmospheric pressure spatial atomic layer deposition (AP-SALD) has recently emerged as an appealing technique for rapidly producing high quality oxides. Here, we focus on the use of AP-SALD to deposit functional ZnO thin films, particularly on the reactors used, the film properties, and the dopants that have been studied. We highlight how these films are advantageous for the performance of solar cells, organometal halide perovskite light emitting diodes, and thin-film transistors. Future AP-SALD technology will enable the commercial processing of thin films over large areas on a sheet-to-sheet and roll-to-roll basis, with new reactor designs emerging for flexible plastic and paper electronics.The authors acknowledge the support of the Rutherford Foundation of New Zealand and the Cambridge Commonwealth, European and International Trusts, and the ERC Advanced Investigator Grant, Novox, ERC-2009-adG247276. DMR acknowledges Marie Curie Actions (FP7/2007-2013, Grant Agreement Nos. 219332 and 631111), and the Ramon y Cajal 2011 programme from the Spanish MICINN and the European Social Fund, and the Comissionat per a Universitats I Recerca (CUR) del DIUE de la Generalitat de Catalunya, Spain.This is the final published version of the article. It was originally published in APL Materials (Hoye RLZ, Muñoz-Rojas D, Nelson SF, Illiberi A, Poodt P, Roozeboom F, MacManus-Driscoll JL, APL Materials, 2015, 3, 040701, doi:10.1063/1.4916525). The final version is available at http://dx.doi.org/10.1063/1.491652

Local survelance study on etiology of community-and hospital-acquired urinary tract infections (UTI) and antimicrobial susceptibility of uropathogens

This study was conduced during October 2010-March 2011 with the collaboration of the microbiology laboratory of International Evangelical Hospital (Voltri division) to identify the most frequent pathogens isolates from Urinary Tract Infections (UTI) and to evaluate their antibiotics susceptibility patterns. Overall, 780 consecutive, non duplicate strains were collected and sent to the coordinating laboratory. 143 strains were from Healthcare settings and 637 from comunity acqueired infections.The most rappresented pathogens was E. coli. In our region the epidemiological community landscape in terms of resistance, is getting closer to the nosocomial setting

Annealing of SnO2 thin films by ultra-short laser pulses

Post-deposition annealing by ultra-short laser pulses can modify the optical properties of SnO2 thin films by means of thermal processing. Industrial grade SnO2 films exhibited improved optical properties after picosecond laser irradiation, at the expense of a slightly increased sheet resistance [Proc. SPIE 8826, 88260I (2013)]. The figure of merit ϕ = T10 / Rsh was increased up to 59% after laser processing. In this paper we study and discuss the causes of this improvement at the atomic scale, which explain the observed decrease of conductivity as well as the observed changes in the refractive index n and extinction coefficient k. It was concluded that the absorbed laser energy affected the optoelectronic properties preferentially in the top 100-200 nm region of the films by several mechanisms, including the modification of the stoichiometry, a slight desorption of dopant atoms (F), adsorption of hydrogen atoms from the atmosphere and the introduction of laser-induced defects, which affect the strain of the film

Epidemiological study of pathogens isolated from blood in Liguria during 2011

Objectives. An epidemiological study addressed to identify the most represented pathogens isolated from blood and to evaluate their antibiotic susceptibility patterns, was conducted. Methods. Five clinical microbiology laboratories, homogenously distributed in Liguria, were required to collected all consecutive non-duplicates strains isolated from blood cultures during March 2011 to May 2011. the strains were sent to the reference laboratory (Section of Microbiology, DISC, University of Genoa, Italy). Results. A total of 159 microorganisms were enrolled, including 81 Gram positive, 69 Gram negative and 9 fungi.The most represented pathogens were: Escherichia coli (35), Staphylococcus aureus (26), S. epidermidis (20), S. hominis (10). Samples were collected mainly from medicine (59 isolates).Among the staphylococci, the most active molecules were: vancomycin (100% of susceptible strains), teicoplanin (93.4%), trimethoprim-sulfamethoxazole (83.8%) and tobramycin (61.6%). Enterococci showed rates of resistance to vancomycin of 25%. Enterobacteriaceae exhibited resistance to ampicillin (76.9%), ceftriaxone (44.4%), ciprofloxacin (43.3%), trimethoprim-sulfamethoxazole (36.6%) and ceftazidime (32.2%). Conclusions. The data show a higher incidence of Gram positive (51%) in comparison to Gram negative (43.4%). Gram-positive strains showed a high resistance level to fluoroquinolones (92.3%) while Gram-negative resulted resistant to ceftriaxone (44.4%) and fluoroquinolone (43.3%)

Epidemiological study of pathogens isolated from blood in Liguria (January-April 2010)

Objectives. An epidemiological study to identify the most represented pathogens isolated from blood and to evaluate their antibiotic susceptibility patterns, was conducted. Methods. Seven clinical microbiology laboratories, homogeneously distributed in the Ligurian area,were required to collected all consecutive non-duplicates strains isolated froom blood cultures during January 2010 to April 2010. The strains were sent to the reference laboratory (Sezione di Microbiologia del DISC, University of Genoa, Italy). Results. A total of 277 microorganisms were enrolled, including 155 Gram positive and 122 Gram negative.The most represented pathogens were: Escherichia coli (68), Staphylococcus aureus (57), Staphylococcus epidermidis (32), Staphylococcus hominis (17), Pseudomonas aeruginosa (15), Klebsiella pneumoniae (15), Enterococcus faecalis (11). Samples were collected mainly from medicine (66, 33.3%, of this number was determined by E. coli), intensive care units (33, 18.2% of this number consisted of S. epidermidis), surgery (24, 33.3% consisted of E. coli) and infectious diseases (20, of which S. aureus, E. coli and S. epidermidis equally represented 20.0%).Among the Staphylococci the most active molecules were: vancomycin and teicoplanin (100% of susceptible strains), chloramphenicol (92.3%) and trimethoprim-sulfamethoxazole (89.8%). Among the OXA-R Staphylococci (81/123, 65.9%) the most active molecules were: vancomycin and teicoplanin (100% of susceptible strains), chloramphenicol (93.8%) and trimethoprim-sulfamethoxazole (84.8%). Enterococci showed rates of resistance to vancomycin of 5.9%. Enterobacteriaceae exhibited resistance to ampicillin (77.5%), trimethoprim-sulfamethoxazole (42.6%), ciprofloxacin (41.2%), ceftriaxone (37.5%), ceftazidime (28.2%), cefepime (26.7%), cefoxitin (22.1%), piperacillintazobactam (20.4%), imipenem (4.7%) and amikacin (2.9%). The Gram negative non-Enterobacteriaceae showed rates of resistance of 100% to ceftriaxone, 81.3% to trimethoprim-sulfamethoxazole, 42.1% to ciprofloxacin and piperacillin-tazobactam, 33.3% to ceftazidime, 31.6% to cefepime, 27.8% to imipenem, 26.3 % to amikacin. Conclusions. The data show a higher incidence of Gram positive (56%) in comparison to Gram negative (44%).This confirms the high incidence of oxacillino-resistance in Staphylococci in our geographic area.Against Enterobacteriaceae rates of resistance were observed in excess of 20% for all drugs tested except imipenem (4.7%) and amikacin (2.9%). The proportion of imipenem-resistant isolates was constituted of strains of K. pneumoniae carbapenemase producers