The Role Of Cadmium Oxide Within The Thin Films Of The Buffer Cds Aimed At Solar Cells Based Upon CIGS Films Fabrication

High quality Cadmium Sulphide thin films were grown on directly heated substrates of commercial glass by means of Modified Chemical Bath Deposition. Structural and optical properties of the obtained films were achieved. The impact of heat treatment in air at 450°C for one hour reveals the apparition of nano films of Cadmium Oxide on the surface of these buffer layers, which decreases dramatically the optical performance of the annealed films of CdS.High quality Cadmium Sulphide thin films were grown on directly heated substrates of commercial glass by means of Modified Chemical Bath Deposition. Structural and optical properties of the obtained films were achieved. The impact of heat treatment in air at 450°C for one hour reveals the apparition of nano films of Cadmium Oxide on the surface of these buffer layers, which decreases dramatically the optical performance of the annealed films of CdS

Cost-Eeffective Fabrication Processes Of The Absorber CUINSE2 (CIS) And The Buffer Cadmium Sulphide

This paper reports a study of direct heated substrate chemical bath deposited Cadmium Sulphide buffer films. Impact of multi-depositions on both film thickness and its crystallinity features were studied. The absorption coefficient and index refraction of CdS were also determined. The absorber CuInSe2 was grown by means of single-step electrodeposition. Structural analysis shows a quasi-amorphous films and morphological image shows a grained surface.This paper reports a study of direct heated substrate chemical bath deposited Cadmium Sulphide buffer films. Impact of multi-depositions on both film thickness and its crystallinity features were studied. The absorption coefficient and index refraction of CdS were also determined. The absorber CuInSe2 was grown by means of single-step electrodeposition. Structural analysis shows a quasi-amorphous films and morphological image shows a grained surface

Community acceptance of large-scale solar energy installations in developing countries: Evidence from Morocco

Renewable energy production is climbing the public agenda in many countries in the Middle East and North Africa (MENA region), for reasons of energy security, independence and local value creation. While technical and economic barriers are largely understood, in this paper we investigate the issue of community acceptance. In so doing, we explore the importance of relevant drivers of community acceptance such as level of expected socio-economic and environmental impacts, procedural and distributive justice, and trust. We conducted 232 face-to-face interviews with the local population in Ouarzazate in Morocco, the building site of a flagship project for concentrated solar power in the MENA region. We find that community acceptance is almost universal, particularly because solar power is perceived to be environmentally friendly. At the same time perceived level of knowledge about the project is very low, which is positively linked to the high level of acceptance. Our data suggest that there may be some social desirability bias distorting community acceptance; only long-term experience with the project will show whether hopes for job creation will be fulfilled and high levels of acceptance can be maintained

The synthesis of TiO2 thin film by Chemical Bath Deposition (CBD) method

Titanium oxide (TiO2) films have several advantages for applications in solar cells and very commonly used as a photo-catalyst for degradation of environmental pollutants. In this study, TiO2 films were synthesized using, a simple, less expensive, low temperature and convenient for large area deposition method, a chemical bath deposition (CBD) and their structural and optical properties were examined at various calcinations temperatures. The X-ray diffraction (XRD) technique shows the presence of the picks characteristic of anatase phase after annealing our films at 500°C, 600°C and rutile phase appears after heat treatment at 700°C. The surface morphology of the deposited films was characterized by the FEG scanning electronic microscopy (FEGSEM) and atomic force microscopy (AFM). Energy dispersive X-ray spectroscopy (EDS) analysis was used to determine the chemical composition of the prepared films. The UV-Vis-NIR spectroscopy shows that the film exhibits a transmission around 60%. The indirect band gap of the deposited films was between 2.88 and 3.22 eV

NUMERICAL SIMULATION OF PHOTOCURRENT IN A SOLAR CELL BASED AMORPHOUS SILICON

We propose in this work, a method of simulation based on the resolution of the equations of continuities for homostructures of silicon-based solar, and used a method of calculation the photocurrent delivered by the silicon solar cell applying the equations of continuities and the currents by analogy to the phenomena of loads transport according to the model of an homojunction n-a-Si:H/p-a-Si:H. We used Matlab software to simulate and optimize the layers thicknesses to achieve the maximum photocurrent generated under AM1.5 solar spectrum. The optimization of donor layer thickness shows clearly that the best results are obtained with the finest structures.  We worked out a numerical model based on the resolution of the equations of continuities who gave the results in good agreement with literature and which allowed, moreover a better control of the performances of the cells based on silicon, for their improvement

Pulse Electrodepositin of ZnO for Thin Absorber Solar Cells

AbstractThis study reports the influence of the condition parameters on the electrodeposition of zinc oxide using Zn(NO3)2 6H2O. ZnO thin films were electrodeposited on FTO and Mo substrate, using a pulse electrodeposition technique. Thin and adherent films have been obtained after 360 cycles. The pulse electrodeposition process was investigated though voltammetry cyclic. The morphology as well as the optical properties of the films was studied by using scanning electron microscope (SEM) and optical transmittance spectroscopy

Study of Cu/In/Se/Se thin films prepared by the Stacked Elemental Layer (SEL) technique

CuInSe2 thin films have been grown on Corning glass and Si (100) substrates using stacked elemental layers (SEL) processing. The influence of substrate’s nature and substrate’s temperature were studied. X-ray diffraction and SEM measurements have shown that the films exhibit an excellent crystallinity and crystallize in a tetragonal structure. Scanning electron microscopy investigations have shown that the films consist in a structure with large grains in the range 80 – 200 nm. Increasing the deposition temperature from room temperature to 300 °C has lead to a change in the composition and morphology of the films. Characteristic peaks of the chalcopyrite structure such as (101), (211) and (311) were clearly observed for both layers upon annealing at 450°C as evidenced by X-ray diffraction study. The determined lattice parameters were a = 0.57725 (6) nm, b = 1.1621 (2) nm for sample prepared at room temperature and a = 0.57770 (4) nm, b = 1.1602 (1) nm for Ts = 300°C. The crystallographic structure of the CuInSe2 sample was analyzed by Rietveld analysis using X-ray powder diffraction data. UV-Vis-NIR Spectrophotometry was used to investigate the optical characteristics of different Cu/In/Se/Se thin layers in the spectral range between 300 – 2000 nm. The optical band-gap of our materials increases from 0.98 to 1.01 eV

MAPbI2.9-xBrxCl0.1 hybrid halide perovskites: Shedding light on the effect of chloride and bromide ions on structural and photoluminescence properties

[EN] The optical and structural properties of CH3NH3PbI3 can be adjusted by introducing other extrinsic ions such as chloride and bromide. In this work, mixed bromide iodide lead perovskites with a 10% fraction of chloride were prepared from methylamine, lead nitrate and the corresponding hydro acid (X = I, Br, Cl). The effect of bromide and chloride incorporation on different properties of perovskite thin film was investigated. The Pawley fit method indicates the formation of the iodide halide MAPbI3 Pm-3 m cubic phase for x = 0 and the tetragonal P4/mmm phase for x ≥ 0.3. All deposited films showed a strong absorbance in the UV vis range. The band gap values were estimated from absorbance measurements. It was found that the onset of the absorption edge for MAPbI2.9-xBrxCl0.1 thin film perovskites ranges between 1.60 and 1.80 eV. Moreover, it was found that both Cl and Br affect the PL emission of the mixed halide lead perovskite, the MAPbI2.9−xBrxCl0.1 films displayed intermediate values from 730 nm (MAPbI2.2Br0.7Cl0.1) to 770 nm (MAPbI2.6Br0.3Cl0.1)This work was supported by Ministerio de Economia y Competitividad (ENE2013-46624-C4-4-R) and Generalitat Valenciana (Prometeus 2014/044).Atourki, L.; Vega-Fleitas, E.; Marí, B.; Mollar García, MA.; Ahsaine, H.; Bouabid, K.; Ihlal, A. (2016). MAPbI2.9-xBrxCl0.1 hybrid halide perovskites: Shedding light on the effect of chloride and bromide ions on structural and photoluminescence properties. Applied Surface Science. 390:744-750. https://doi.org/10.1016/j.apsusc.2016.08.17674475039

EBIC MEASUREMENTS OF ANNEALED SILICON BICRYSTALS

Two silicon bicrystals have been analyzed by EBIC to determine the evolution of minority carrier properties such as diffusion length, Lp, and recombination velocity, Vg, after different thermal treatments. The geometric orientations of bicrystals are 26° 62 Σ13 and 16° 26 Σ25. The grain boundary planes are {510} and {710} respectively. Small deviations of the order of 0,15° to the exact coincidence orientation are observed. The thermal treatments were carried out in a high purity argon flow at 450°C, 750°C and 950°C for 2, 24, 48, 75 and 92h