Generated carrier dynamics in V-pit enhanced InGaN/GaN light emitting diode

We investigate the effects of V-pits on the optical properties of a state-of-the art highly efficient, blue InGaN/GaN multi-quantum-well (MQW) light emitting diode (LED) with high internal quantum efficiency (IQE) of > 80%. The LED is structurally enhanced by incorporating pre-MQW InGaN strain relief layer with low InN content and patterned sapphire substrate. For comparison, a conventional (unenhanced) InGaN/GaN MQW LED (with IQE of 46%) grown under similar conditions was subjected to the same measurements. Scanning transmission electron microscopy (STEM) reveals the absence of V-pits in the unenhanced LED, whereas in the enhanced LED, V-pits with {10-11} facets, emerging from threading dislocations (TDs) were prominent. Cathodoluminescence mapping reveals the luminescence properties near the V-pits, showing that the formation of V-pit defects can encourage the growth of defect-neutralizing barriers around TD defect states. The diminished contribution of TDs in the MQWs allows indium-rich localization sites to act as efficient recombination centers. Photoluminescence and time-resolved spectroscopy measurements suggest that the V-pits play a significant role in the generated carrier rate and droop mechanism, showing that the quantum confined Stark effect is suppressed at low generated carrier density, after which the carrier dynamics and droop are governed by the carrier overflow effect

Excitonic localization in AlN-rich AlxGa1-xN/AlyGa1-yN multi-quantum-well grain boundaries

AlGaN/AlGaN multi-quantum-wells (MQW) with AlN-rich grains have been grown by metal organic chemical vapor deposition. The grains are observed to have strong excitonic localization characteristics that are affected by their sizes. The tendency to confine excitons progressively intensifies with increasing grain boundary area. Photoluminescence results indicate that the MQW have a dominant effect on the peak energy of the near-bandedge emission at temperatures below 150 K, with the localization properties of the grains becoming evident beyond 150 K. Cathodoluminescence maps reveal that the grain boundary has no effect on the peak intensities of the AlGaN/AlGaN samples

Gigahertz nano-optomechanical resonances in a dielectric SiC-membrane metasurface array

Optically and vibrationally resonant nanophotonic devices are of particular importance for their ability to enhance optomechanical interactions, with applications in nanometrology, sensing, nano-optical control of light, and optomechanics. Here, the optically resonant excitation and detection of gigahertz vibrational modes are demonstrated in a nanoscale metasurface array fabricated on a suspended SiC membrane. With the design of the main optical and vibrational modes to be those of the individual metamolecules, resonant excitation and detection are achieved by making use of direct mechanisms for optomechanical coupling. Ultrafast optical pump-probe studies reveal a multimodal gigahertz vibrational response corresponding to the mechanical modes of the suspended nanoresonators. Wavelength and polarization dependent studies reveal that the excitation and detection of vibrations takes place through the metasurface optical modes. The dielectric metasurface pushes the modulation speed of optomechanical structures closer to their theoretical limits and presents a potential for compact and easily fabricable optical components for photonic applications.</p

Flexible thin film optical solar reflectors with Ta2O5-based multimaterial coatings for space radiative cooling

Optical Solar Reflectors (OSRs) combine low solar radiation absorption (α) and high broadband infrared emissivity (ϵ) and are applied to the external surface of spacecraft for its thermal management. Bulk glass OSR tiles are the incumbent, but ultra-lightweight and thin-film flexible OSR coatings are raising considerable interest for both space and terrestrial radiative cooling applications. In this work, a genetic algorithm combined with a transfer matrix method is used for the design and optimization of multimaterial thin-film OSRs for broadband radiative cooling. The algorithm simultaneously optimizes the spectral performance of the OSR at two parts of the wavelength spectrum, solar (0.3-2.5 μm) and thermal infrared (2.5-30 μm). The designed optimized OSR structure consists of 18 alternating layers of three materials, SiN, SiO 2, and Ta 2O 5, on top of an Al mirror backreflector, with a total thickness of only 2.088 μm. The optimized multilayer stack contributes distributed Bragg reflections that reduce the residual solar absorption below that of an uncoated Al mirror. The optimized OSR is demonstrated experimentally on a 150 mm (6 in.) Si wafer and on a flexible polyimide substrate using a production level reactive sputtering tool. The fabricated thin film OSR shows good thermal-optical property with α = 0.11 and ϵ = 0.75 and achieves a net cooling power of 150.1 W/m 2 under conditions of one sun total solar irradiance in space. The ultrathin coating fabricated using hard inorganic materials facilitates its integration onto flexible foils and enables large-scale manufacture of low-cost OSRs for broadband radiative cooling applications. </p