Electronic structure of Ca1−x_{1-x}Srx_xVO3_3: a tale of two energy-scales

We investigate the electronic structure of Ca$_{1-x}$Sr$_x$VO$_3$ using photoemission spectroscopy. Core level spectra establish an electronic phase separation at the surface, leading to distinctly different surface electronic structure compared to the bulk. Analysis of the photoemission spectra of this system allowed us to separate the surface and bulk contributions. These results help us to understand properties related to two vastly differing energy-scales, namely the low energy-scale of thermal excitations (~$k_{B}T$) and the high-energy scale related to Coulomb and other electronic interactions.Comment: 4 pages and 3 figures. Europhysics Letters (appearing

Geometric Bremsstrahlung in the Early Universe

We discuss photon emission from particles decelerlated by the cosmic expansion. This can be interpretated as a kind of bremsstrahlung induced by the Universe geometry. In the high momentum limit its transition probability does not depend on detailed behavior of the expansion.Comment: 20 pages, No figure

Tunnel magnetoresistance and interfacial electronic state

We study the relation between tunnel magnetoresistance (TMR) and interfacial electronic states modified by magnetic impurities introduced at the interface of the ferromagnetic tunnel junctions, by making use of the periodic Anderson model and the linear response theory. It is indicated that the TMR ratio is strongly reduced depending on the position of the $d$-levels of impurities, based on reduction in the spin-dependent $s$-electron tunneling in the majority spin state. The results are compared with experimental results for Cr-dusted ferromagnetic tunnel junctions, and also with results for metallic multilayers for which similar reduction in giant magnetoresistance has been reported.Comment: 5 pages, 4 figures, 2 column revtex4 format, ICMFS 2002 (Kyoto

Fermi Surface of 3d^1 Perovskite CaVO3 Near the Mott Transition

We present a detailed de Haas van Alphen effect study of the perovskite CaVO3, offering an unprecedented test of electronic structure calculations in a 3d transition metal oxide. Our experimental and calculated Fermi surfaces are in good agreement -- but only if we ignore large orthorhombic distortions of the cubic perovskite structure. Subtle discrepancies may shed light on an apparent conflict between the low energy properties of CaVO3, which are those of a simple metal, and high energy probes which reveal strong correlations that place CaVO3 on the verge of a metal-insulator transition.Comment: 4 pages, 4 figures (REVTeX

Microwave and millimeter wave spectroscopy in the slightly hole-doped ladders of Sr14_{14}Cu24_{24}O41_{41}

We have measured the temperature- and frequency dependence of the microwave and millimeter wave conductivity $\sigma_1(T,\omega)$ along both the ladder (c-axis) and the leg (a-axis) directions in Sr$_{14}$Cu$_{24}$O$_{41}$. Below a temperature $T^*$($\sim$170 K), we observed a stronger frequency dependence in $\sigma_1^c(T,\omega)$ than that in $\sigma_1^a(T,\omega)$, forming a small resonance peak developed between 30 GHz and 100 GHz. We also observed nonlinear dc conduction along the c-axis at rather low electric fields below $T^*$. These results suggest some collective excitation contributes to the c-axis charge dynamics of the slightly hole-doped ladders of Sr$_{14}$Cu$_{24}$O$_{41}$ below $T^*$.Comment: 7 pages, 4 figure, to be published in Europhysics Letter

Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator

A field-effect transistor that employs a perovskite-type SrTiO3 single crystal as the semiconducting channel is revealed to function as n-type accumulation-mode device with characteristics similar to that of organic FET's. The device was fabricated at room temperature by sputter-deposition of amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room temperature. The temperature dependence of the FE mobility down to 2K shows a thermal-activation-type behavior with an activation energy of 0.6eV

Silicon nitride powder

The characteristics and preparation methods of Si3N4 are reviewed. Special emphasis is placed on the correlation between impurities and strength of sintered Si3N4

Giant Intrinsic Spin and Orbital Hall Effects in Sr2MO4 (M=Ru,Rh,Mo)

We investigate the intrinsic spin Hall conductivity (SHC) and the d-orbital Hall conductivity (OHC) in metallic d-electron systems, by focusing on the t_{2g}-orbital tight-binding model for Sr2MO4 (M=Ru,Rh,Mo). The conductivities obtained are one or two orders of magnitude larger than predicted values for p-type semiconductors with 5% hole doping. The origin of these giant Hall effects is the ``effective Aharonov-Bohm phase'' that is induced by the d-atomic angular momentum in connection with the spin-orbit interaction and the inter-orbital hopping integrals. The huge SHC and OHC generated by this mechanism are expected to be ubiquitous in multiorbital transition metal complexes, which pens the possibility of realizing spintronics as well as orbitronics devices.Comment: 5 pages, accepted for publication in PR