Properties of nanocones formed on a surface of semiconductors by laser radiation: quantum confinement effect of electrons, phonons, and excitons

On the basis of the analysis of experimental results, a two-stage mechanism of nanocones formation on the irradiated surface of semiconductors by Nd:YAG laser is proposed for elementary semiconductors and solid solutions, such as Si, Ge, SiGe, and CdZnTe. Properties observed are explained in the frame of quantum confinement effect. The first stage of the mechanism is characterized by the formation of a thin strained top layer, due to redistribution of point defects in temperature-gradient field induced by laser radiation. The second stage is characterized by mechanical plastic deformation of the stained top layer leading to arising of nanocones, due to selective laser absorption of the top layer. The nanocones formed on the irradiated surface of semiconductors by Nd:YAG laser possessing the properties of 1D graded bandgap have been found for Si, Ge, and SiGe as well, however QD structure in CdTe was observed. The model is confirmed by "blue shift" of bands in photoluminescence spectrum, "red shift" of longitudinal optical line in Raman back scattering spectrum of Ge crystal, appearance of Ge phase in SiGe solid solution after irradiation by the laser at intensity 20 MW/cm2, and non-monotonous dependence of Si crystal micro-hardness as function of the laser intensity

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

The surface morphology of Ge0.96Sn0.04/Si(100) heterostructures grown at temperatures from 250 to 450°C by atomic force microscopy (AFM) and scanning tunnel microscopy (STM) ex situ has been studied. The statistical data for the density of Ge0.96Sn0.04 nanodots (ND) depending on their lateral size have been obtained. Maximum density of ND (6 × 1011 cm-2) with the average lateral size of 7 nm can be obtained at 250°C. Relying on the reflection of high energy electron diffraction, AFM, and STM, it is concluded that molecular beam growth of Ge1-xSnx heterostructures with the small concentrations of Sn in the range of substrate temperatures from 250 to 450°C follows the Stranski-Krastanow mechanism. Based on the technique of recording diffractometry of high energy electrons during the process of epitaxy, the wetting layer thickness of Ge0.96Sn0.04 films is found to depend on the temperature of the substrate

Macro-scale transport of the excitation energy along a metal nanotrack: exciton-plasmon energy transfer mechanism

Presently we report (i) excited state (exciton) propagation in a metal nanotrack over macroscopic distances, along with (ii) energy transfer from the nanotrack to adsorbed dye molecules. We measured the rates of both of these processes. We concluded that the effective speed of exciton propagation along the nanotrack is about 8 × 107 cm/s, much lower than the surface plasmon propagation speed of 1.4 × 1010 cm/s. We report that the transmitted energy yield depends on the nanotrack length, with the energy emitted from the surface much lower than the transmitted energy, i.e. the excited nanotrack mainly emits in its end zone. Our model thus assumes that the limiting step in the exciton propagation is the energy transfer between the originally prepared excitons and surface plasmons, with the rate constant of about 5.7 × 107 s-1. We also conclude that the energy transfer between the nanotrack and the adsorbed dye is limited by the excited-state lifetime in the nanotrack. Indeed, the measured characteristic buildup time of the dye emission is much longer than the characteristic energy transfer time to the dye of 81 ns, and thus must be determined by the excited state lifetime in the nanotrack. Indeed, the latter is very close to the characteristic buildup time of the dye emission. The data obtained are novel and very promising for a broad range of future applications.PR Institute of Functionalized Nanomaterials NASA EPSCoR grant (NASA Cooperative Agreement) NNX15AK43A National Centre for Research Resources NIH-NCRR-G12-RR03035 NIMHD-G12-MD007583info:eu-repo/semantics/publishedVersio

How does your crystal grow? A commentary on Burton, Cabrera and Frank (1951) ‘The growth of crystals and the equilibrium structure of their surfaces’

The key ideas presented in the classic paper ‘The growth of crystals and the equilibrium structure of their surfaces’ by W. K. Burton, N. Cabrera and F. C. Frank, published in Philosophical Transactions A in 1951, are summarized and put in the context of both the state of knowledge at the time of publication and the considerable amount of work since that time that has built on and developed these ideas. Many of these developments exploit the huge increase in the capabilities of computer modelling that complement the original analytic approach of the paper. The dearth of relevant experimental data at the time of the original publication has been transformed by the application of increasingly sophisticated modern methods of surface science. This commentary was written to celebrate the 350th anniversary of the journal Philosophical Transactions of the Royal Society

Solid-State Ion Exchange - Phenomenon and Mechanism

Highly exchanged MeI-Y (MeI = Li, Na, K, Rb, Cs) as well as La-Y zeolites were prepared through solid-state ion exchange between NH4-Y (98%) and the respective chlorides. It was shown that, except for the case of Li-Y, both low- temperature and high-temperature exchange processes occurred. With the system MeICl/NH4-Y the high-temperature reaction seemed to proceed more easily the lower the lattice energy of the alkaline chloride. In La-Y, the bare La3+ ions introduced via solid-state ion exchange were catalytically inactive. However, La-Y obtained via solid-state ion exchange was rendered an active catalyst for both ethylbenzene disproportionation and n-decane cracking after a brief contact with traces of water vapor. For the solid-state reaction itself, the presence of water is not a prerequisite