Evaluation of the protective efficacy of immunoglobulin Y (IgY- antibodies) prepared against Walterinnesia aegyptia snake venom in Saudi Arabia

Four groups of eight chickens were immunized intramuscularly with Walterinnesia aegyptia snake venoms mixed with Freund's complete adjuvant during the period from 1st October 2009 to 1st October 2011 at the Center of Excellence in Biotechnology Research, King Saud University, Saudi Arabia. Three weeks later, the injections were repeated with the venoms in incomplete Freund's adjuvant. Three boosters were given with the venoms at three weeks intervals. The immunoglobulin Y (IgY)-antibodies was extracted by ammonium sulphate-caprylic acid method, the antibody titer were tested by enzyme linked immunosorbant assay and the protective efficacies of the extracted immunoglobulins were performed. IgY-preparation extracted by ammonium sulphate-caprylic acid method showed lack of low molecular weight bands (non-immunoglobulin proteins) and the bands representing IgY-antibodies, which have molecular weights ranging from 180 to 200 kDa, appeared sharp and clear. Moreover, evaluation of the protective value of the IgY - antibodies prepared revealed that, one milliliter of extracted IgY-antibodies containing 15 mg/ml anti-W. aegyptia venom specific IgY could produce 100% protection against 50 LD50 and 75% protection against 60 LD50. Laying hens could be used as an alternative source of polyclonal antibodies against W. aegyptia snake venoms due to several advantages as compared with mammals traditionally used for such purpose.Keywords: Snake venom, Walterinnesia aegyptia, immunoglobulins Y, protective efficacy, caprylic aci

Galaxy-scale Star Formation on the Red Sequence: the Continued Growth of S0s and the Quiescence of Ellipticals

This paper examines star formation (SF) in relatively massive, primarily early-type galaxies (ETGs) at z~0.1. A sample is drawn from bulge-dominated GALEX/SDSS galaxies on the optical red sequence with strong UV excess and yet quiescent SDSS spectra. High-resolution far-UV imaging of 27 such ETGs using HST ACS/SBC reveals structured UV morphology in 93% of the sample, consistent with low-level ongoing SF (~0.5 Ms/yr). In 3/4 of the sample the SF is extended on galaxy scales (25-75 kpc), while the rest contains smaller (5-15 kpc) SF patches in the vicinity of an ETG - presumably gas-rich satellites being disrupted. Optical imaging reveals that all ETGs with galaxy-scale SF in our sample have old stellar disks (mostly S0 type). None is classified as a true elliptical. In our sample, galaxy-scale SF takes the form of UV rings of varying sizes and morphologies. For the majority of such objects we conclude that the gas needed to fuel current SF has been accreted from the IGM, probably in a prolonged, quasi-static manner, leading in some cases to additional disk buildup. The remaining ETGs with galaxy-scale SF have UV and optical morphologies consistent with minor merger-driven SF or with the final stages of SF in fading spirals. Our analysis excludes that all recent SF on the red sequence resulted from gas-rich mergers. We find further evidence that galaxy-scale SF is almost exclusively an S0 phenomenon (~20% S0s have SF) by examining the overall optically red SDSS ETGs. Conclusion is that significant number of field S0s maintain or resume low-level SF because the preventive feedback is not in place or is intermittent. True ellipticals, on the other hand, stay entirely quiescent even in the field.Comment: Accepted for publication in ApJ. Contains color figures, but compatible with non-color printer

Improvement of composition of CdTe thin films during heat treatment in the presence of CdCl2

CdCl2 treatment is a crucial step in development of CdS/CdTe solar cells. Although this rocessing step has been used over a period of three decades, full understanding is not yet achieved. This paper reports the experimental evidence for improvement of composition of CdTe layers during CdCl2 treatment. This investigation makes use of four selected analytical techniques; Photo-electro-chemical (PEC) cell, X-ray diffraction (XRD), Raman spectroscopy and Scanning electron microscopy (SEM). CdTe layers used were electroplated using three Cd precursors; CdSO4, Cd(NO3)2 and CdCl2. Results show the improvement of stoichiometry of CdTe layers during CdCl2 treatment through chemical reaction between Cd from CdCl2 and elemental Te that usually precipitate during CdTe growth, due to its natural behaviour. XRD and SEM results show that the low-temperature (~85ºC) electroplated CdTe layers consist of ~(20-60) nm size crystallites, but after CdCl2 treatment, the layers show drastic recrystallisation with grains becoming a few microns in size. These CdCl2 treated layers are then comparable to high temperature grown CdTe layers by the size of grains

Progress in development of graded bandgap thin film solar cells with electroplated materials

Photovoltaic devices are developed mainly based on p-n or p-i-n type device structures, and these devices can utilise only a fraction of the solar spectrum. In order to further improve device parameters and move towards low-cost and high-efficiency next generation solar cells, device architectures capable of harvesting all photons available should be designed and developed. One such architecture is the fully graded bandgap device structure as proposed recently based on both n-type and p-type window layers. These designs have been experimentally tested using well researched GaAs/AlGaAs system producing impressive device parameters of open circuit voltage (Voc) ~1175 mV and fill factor (FF) ~0.85. The devices have also been experimentally tested for the evidence of impurity photovoltaic (PV) effect and impact ionisation taking place within the same device. Since these structures have been experimentally proved with a well-established semiconductor, the effort has been focussed on developing these devices using low-cost and scalable electroplated semiconductors, in order to minimise manufacturing cost. This paper reviews and summarises the work carried out during the past decade on this subject. Graded bandgap devices produced using only two or three electroplated semiconductor layers have been explored and their conversion efficiencies have gradually increased from 10.0%, through 12.8% to 15.3% for different structures. While the work is progressing along this line, the paper summarises the achievements to date

Analysis of electrodeposited CdTe thin films grown using cadmium chloride precursor for applications in solar cells

Deposition of cadmium telluride (CdTe) from cadmium chloride (CdCl2) and tellurium oxide has been achieved by electroplating technique using two-electrode configuration. Cyclic voltammetry shows that near-stoichiometric CdTe is achievable between 1330 and 1400 mV deposition voltage range. The layers grown were characterised using X-ray diffraction (XRD), UV–Visible spectrophotometry, scanning electron microscopy (SEM), energy-dispersive X-ray analysis (EDX), photoelectrochemical (PEC) cell and DC conductivity measurements. The XRD shows that the electrodeposited CdTe layer is polycrystalline in nature. The UV–Visible spectrophotometry shows that the bandgap of both as-deposited and heat-treated CdTe films are in the range of (1.44–1.46) eV. The SEM shows grain growth after CdCl2 treatment, while, the EDX shows the effect of growth voltage on the atomic composition of CdTe layers. The PEC results show that both p- and n-type CdTe can be electrodeposited and the DC conductivity reveals that the high resistivity is at the inversion growth voltage (Vi) for the as-deposited and CdCl2 treated layers

The Bright Ages Survey. I. Imaging Data

This is the first paper in a series presenting and analyzing data for a K-selected sample of galaxies collected in order to identify and study galaxies at moderate to high redshift in rest-wavelength optical light. The sample contains 842 objects over 6 separate fields covering 75.6 arcmin^2 down to K=20-20.5. We combine the K-band with UBVRIzJH multi-band imaging, reaching depths of R~26. Two of the fields studied also have deep HST WFPC2 imaging, totaling more than 60 hours in the F300W, F450W, F606W, and F814W filters. Using artificial galaxy modeling and extraction we measure 85% completeness limits down to K=19.5-20, depending on the field examined. The derived K-band number counts are in good agreement with previous studies. We find a density for Extremely Red Objects(EROs; R-K>5) of 1.55+/-0.16 arcmin^{-2} for K<19.7, dominated by the 1714+5015 field (centered on 53w002), with an ERO number density more than 3 times that of the other sample fields. If we exclude the counts for 1714+5015, our density is 0.95+/- 0.14 arcmin. Both ERO densities are consistent with previous measurements due to the significant known cosmic variance of these red sources.Keck spectroscopic redshifts were obtained for 18 of the EROs, all but one of which are emission galaxies. None of the EROs in the 1714+5015 field for which we obtained spectroscopic redshifts are associated with the known z=2.39 over-density, although there are three different galaxy redshift pairs (z=0.90, z=1.03, z=1.22).Comment: 30 pages, 5 figures, accepted by Ap

Electrodeposition of CdTe thin films using nitrate precursor for applications in solar cells

Cadmium telluride (CdTe) thin films have been electrodeposited (ED) on glass/fluorine-doped tin oxide (FTO) substrates using simplified two-electrode system in acidic and aqueous solution containing Cd(NO3)2 4H2O and TeO2. The X-ray diffraction (XRD), optical absorption, photoelectrochemical (PEC) cell measurements, scanning electron microscopy (SEM) and transmission electron microscopy (TEM) have been carried out to study the structural, optical, electrical and morphological properties of the CdTe layers. The XRD study shows that the ED-CdTe layers are polycrystalline with cubic crystal structure. Results obtained from optical absorption reveal that the bandgaps of the as-deposited and the CdCl2 treated CdTe layers are in the ranges ~1.50 to ~1.54 eV and ~1.46 to ~1.51 eV, respectively. Observation from PEC measurements indicates a p-, i- and n-type electrical conductivity for as-deposited CdTe layers grown in the cathodic voltage range (1,247–1,258) mV. The SEM images indicate noticeable change in CdTe grain size from ~85 to ~430 nm after CdCl2 treatment with uniform surface coverage of the glass/FTO substrate. The TEM images show the columnar growth structure for as-deposited and CdCl2 treated CdTe layers. The TEM images also indicate an increase in grain’s diameter from ~50 to ~200 nm after CdCl2 treatment

Optimisation of pH of cadmium chloride post-growth-treatment in processing CDS/CDTE based thin film solar cells

The role of Chlorine-based activation in the production of high quality CdS/CdTe photovoltaic have been well discussed and explored with an overlook of the effect of Cadmium chloride (CdCl2) post-growth treatment acidity on the property of the fabricated devices. This work focuses on the optimisation of CdCl2 post-growth treatment pH as it affects both the material and fabricated device properties of all-electrodeposited multilayer glass/FTO/n-CdS/n-CdTe/p-CdTe configuration. CdCl2 treatments with acidity ranging from pH1 to pH4 were explored. The properties of the ensued CdTe layer were explored using optical, morphological, compositional structural and electrical property analysis, while, the effect on fabricated multilayer glass/FTO/n-CdS/n-CdTe/p-CdTe configuration were also explored using both I-V and C-V measurements. Highest improvements in the optical, morphological, compositional and structural were observed at pH2 CdCl2 post-growth treatment with an improvement in absorption edge, grain size, crystallinity and crystallite size. Conductivity type conversions from n-CdTe to p-CdTe, increase in pin-hole density and collapse of the absorption edge were observed after pH1 CdCl2 treatment. The highest fabricated solar cell efficiency of 13% was achieved using pH2 CdCl2 treatment as compared to other pH values explored

Effect of iodine incorporation on characteristic properties of cadmium telluride deposited in aqueous solution

The electrodeposition of polycrystalline I-doped CdTe was successfully performed from aqueous solutions containing cadmium nitrate (Cd(NO3)2 and tellurium oxide (TeO2). The effects of different I-doping concentrations in the electrolytic bath on the deposited CdTe layers deposited were evaluated structurally, optically, morphologically and electronically using X-ray diffraction (XRD), ultraviolet-visible spectrophotometry, scanning electron microscopy, photoelectrochemical cell measurement and direct-current (DC) conductivity test respectively. The XRD show reduction in the (111) cubic CdTe peak intensity and the calculated crystallite size of the CdTe:I layers above 5 ppm I-doping. At I-doping of 1000 ppm of the CdTe-bath and above, the deposition of only crystalline Te due to the formation of Cd-I complexes debarring the deposition of Cd and co-deposition of CdTe in aqueous solution was observed. Morphologically, reductions in grain size were observed above 5 ppm I-doping with high pinhole density and the formation of cracks within the CdTe:I layers. For the as-deposited CdTe:I layers, conduction type remained n-type across all the explored I-doping concentration of 200 ppm. For the CdCl2 and Ga2(SO4)2+CdCl2 treated CdTe:I layers, the transition from n- to p-type conductivity was observed for the CdTe:I baths doped with 20 ppm and above due to the reduced cadmium deposition on the substrate. The highest conductivity was observed at 5 ppm I-doping of the CdTe-bath. Observations made on the CdTe:I in aqueous solution differs from the non-aqueous solvent documented in the literature. These results are reported systematically in this communication

The Effect of Fluorine Doping on the Characteristic Behaviour of CdTe

Fluorine which is an n-type dopant of cadmium telluride thin films was included during growth from a cadmium nitrate [Cd(NO3)2Æ4H2O] bath using an electrodeposition technique. The fluorine concentration in the Cd(NO3)2Æ4H2O baths were varied between 0.5 ppm and 50 ppm in order to determine its effect on the optical, structural, morphological and electrical properties of the as-deposited and the post-growth-treated layers. These characterisations were carried out using x-ray diffraction, ultraviolet–visible spectrophotometry, scanning electron microscopy, energy dispersive x-rays spectroscopy, photoelectrochemical cell measurement, direct current conductivity measurement and fully fabricated device characterisation. The results are systematically reported in this paper