Carrier relaxation in Si/SiO2_2 quantum dots

Carrier relaxation due to both optical and nonradiative intraband transitions in silicon quantum dots in SiO$_2$ has been considered. Interaction of confined holes with optical phonons has been studied. The Huang-Rhys factor is calculated for such transitions. The probability of intraband transition of a confined hole emitting several optical phonons is estimated.Comment: 8 pages, 2 figures, submitted as an extended abstract to the E-MRS Spring Meeting 200

Magnetic field effect on tunnel ionization of deep impurities by terahertz radiation

A suppression of tunnelling ionization of deep impurities in terahertz frequency electric fields by a magnetic field is observed. It is shown that the ionization probability at external magnetic field, B, oriented perpendicular to the electric field of terahertz radiation, E, is substantially smaller than that at B || E. The effect occurs at low temperatures and high magnetic fields

Magnetic field effect on tunnel ionization of deep impurities by far-infrared radiation

The probability of electron tunneling from a bound to a free state in an alternating electric and a constant magnetic field is calculated in the quasiclassical approximation. It is shown that the magnetic field reduces the probability of electron tunneling. The application of the external magnetic field perpendicular to the electric field reduces the ionization probability at high magnetic fields, when cyclotron resonance frequency becomes larger than reciprocal tunneling time. The increase of electric field frequency to values larger than the same reciprocal tunneling time enhances the influence of magnetic field