4,635 research outputs found
Fast magnetization reversal of nanoclusters in resonator
An effective method for ultrafast magnetization reversal of nanoclusters is
suggested. The method is based on coupling a nanocluster to a resonant electric
circuit. This coupling causes the appearance of a magnetic feedback field
acting on the cluster, which drastically shortens the magnetization reversal
time. The influence of the resonator properties, nanocluster parameters, and
external fields on the magnetization dynamics and reversal time is analyzed.
The magnetization reversal time can be made many orders shorter than the
natural relaxation time. The reversal is studied for both the cases of a single
nanocluster as well as for the system of many nanoclusters interacting through
dipole forces.Comment: latex file, 21 pages, 7 figure
Transition state method and Wannier functions
We propose a computational scheme for materials where standard Local Density
Approximation (LDA) fails to produce a satisfactory description of excitation
energies. The method uses Slater's "transition state" approximation and Wannier
functions basis set. We define a correction to LDA functional in such a way
that its variation produces one-electron energies for Wannier functions equal
to the energies obtained in "transition state" constrained LDA calculations. In
the result eigenvalues of the proposed functional could be interpreted as
excitation energies of the system under consideration. The method was applied
to MgO, Si, NiO and BaBiO and gave an improved agreement with experimental
data of energy gap values comparing with LDA.Comment: 13 pages, 6 figures, 1 tabl
Field Effect Transistor Based on KTaO3 Perovskite
An n-channel accumulation-type field effect transistor (FET) has been
fabricated utilizing a KTaO3 single crystal as an active element and a
sputtered amorphous Al2O3 film as a gate insulator. The device demonstrated an
ON/OFF ratio of 10^4 and a field effect mobility of 0.4cm^2/Vs at room
temperature, both of which are much better than those of the SrTiO3 FETs
reported previously. The field effect mobility was almost temperature
independent down to 200K. Our results indicate that the Al2O3 / KTaO3 interface
is worthy of further investigations as an alternative system of future oxide
electronics.Comment: 3 pages, 3 Postscript figures, submitted to Appl.Phys.Let
Low temperature metallic state induced by electrostatic carrier doping of SrTiO
Transport properties of SrTiO-channel field-effect transistors with
parylene organic gate insulator have been investigated. By applying gate
voltage, the sheet resistance falls below 10 k at low
temperatures, with carrier mobility exceeding 1000 cm/Vs. The temperature
dependence of the sheet resistance taken under constant gate voltage exhibits
metallic behavior (/ 0). Our results demonstrate an insulator to
metal transition in SrTiO driven by electrostatic carrier density control.Comment: 3 pages, 4 figure
Field-Effect Transistor on SrTiO3 with sputtered Al2O3 Gate Insulator
A field-effect transistor that employs a perovskite-type SrTiO3 single
crystal as the semiconducting channel is revealed to function as n-type
accumulation-mode device with characteristics similar to that of organic FET's.
The device was fabricated at room temperature by sputter-deposition of
amorphous Al2O3 films as a gate insulator on the SrTiO3 substrate. The
field-effect(FE) mobility is 0.1cm2/Vs and on-off ratio exceeds 100 at room
temperature. The temperature dependence of the FE mobility down to 2K shows a
thermal-activation-type behavior with an activation energy of 0.6eV
muSR study of the Cu-spin dynamics in the electron-doped high-Tc cuprate of Pr0.86LaCe0.14Cu1-y(Zn,Ni)yO4
Effects of the Zn- and Ni-substitution on the Cu-spin dynamics in the
electron-doped Pr0.86LaCe0.14Cu1-y(Zn,Ni)yO4+a-d with y = 0, 0.01, 0.02, 0.05
and different values of the reduced oxygen content d have been studied using
zero-field muon-spin-relaxation (muSR) measurements at temperatures down to 2
K. For the as-grown sample (d = 0, y = 0) and the sample with a very small d
value (d < 0.01, y = 0), a muon-spin precession due to long-range
antiferromagnetic order has been observed. On the other hand, no precession has
been observed for moderately oxygen-reduced samples (0.01 < d < 0.09). It has
been found that for all the samples of 0.01 < d < 0.09 the asymmetry A(t) (muSR
time spectrum) in the long-time region increases with decreasing temperature at
low temperatures, suggesting possible slowing-down of the Cu-spin fluctuations.
On the other hand, no significant difference between Zn- and Ni-substitution
effects on the slowing down of the Cu-spin fluctuations has been observed.Comment: 4 pages, 2 figures, Proceeding of 10th muSR conference 2005, to be
published in Physica
Effects of Fermi surface and superconducting gap structure in the field-rotational experiments: A possible explanation of the cusp-like singularity in YNiBC
We have studied the field-orientational dependence of zero-energy density of
states (FODOS) for a series of systems with different Fermi surface and
superconducting gap structures. Instead of phenomenological Doppler-shift
method, we use an approximate analytical solution of Eilenberger equation
together with self-consistent determination of order parameter and a
variational treatment of vortex lattice. First, we compare zero-energy density
of states (ZEDOS) when a magnetic field is applied in the nodal direction
() and in the antinodal direction (), by taking
account of the field-angle dependence of order parameter. As a result, we found
that there exists a crossover magnetic field so that for for , consistent with our previous analyses. Next, we showed that and the
shape of FODOS are determined by contribution from the small part of Fermi
surface where Fermi velocity is parallel to field-rotational plane. In
particular, we found that is lowered and FODOS has broader minima, when a
superconducting gap has point nodes, in contrast to the result of the
Doppler-shift method. We also studied the effects of in-plane anisotropy of
Fermi surface. We found that in-plane anisotropy of quasi-two dimensional Fermi
surface sometimes becomes larger than the effects of Doppler-shift and can
destroy the Doppler-shift predominant region. In particular, this tendency is
strong in a multi-band system where superconducting coherence lengths are
isotropic. Finally, we addressed the problem of cusp-like singularity in
YNiBC and present a possible explanation of this phenomenon.Comment: 13pages, 23figure
Fulde-Ferrell-Larkin-Ovchinnikov state in a perpendicular field of quasi two-dimensional CeCoIn5
A Fulde-Ferrell-Larkin-Ovchinnkov (FFLO) state was previously reported in the
quasi-2D heavy fermion CeCoIn5 when a magnetic field was applied parallel to
the ab-plane. Here, we conduct 115^In NMR studies of this material in a
PERPENDICULAR field, and provide strong evidence for FFLO in this case as well.
Although the topology of the phase transition lines in the H-T phase diagram is
identical for both configurations, there are several remarkable differences
between them. Compared to H//ab, the FFLO region for H perpendicular to the
ab-plane shows a sizable decrease, and the critical field separating the FFLO
and non-FFLO superconducting states almost ceases to have a temperature
dependence. Moreover, directing H perpendicular to the ab-plane results in a
notable change in the quasiparticle excitation spectrum within the planar node
associated with the FFLO transition.Comment: 5 pages, 3 figure
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