3,792 research outputs found

    Sensitivity studies for r-process nucleosynthesis in three astrophysical scenarios

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    In rapid neutron capture, or r-process, nucleosynthesis, heavy elements are built up via a sequence of neutron captures and beta decays that involves thousands of nuclei far from stability. Though we understand the basics of how the r-process proceeds, its astrophysical site is still not conclusively known. The nuclear network simulations we use to test potential astrophysical scenarios require nuclear physics data (masses, beta decay lifetimes, neutron capture rates, fission probabilities) for all of the nuclei on the neutron-rich side of the nuclear chart, from the valley of stability to the neutron drip line. Here we discuss recent sensitivity studies that aim to determine which individual pieces of nuclear data are the most crucial for r-process calculations. We consider three types of astrophysical scenarios: a traditional hot r-process, a cold r-process in which the temperature and density drop rapidly, and a neutron star merger trajectory.Comment: 8 pages, 4 figures, submitted to the Proceedings of the International Nuclear Physics Conference (INPC) 201

    Measurements and Monte-Carlo simulations of the particle self-shielding effect of B4C grains in neutron shielding concrete

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    A combined measurement and Monte-Carlo simulation study was carried out in order to characterize the particle self-shielding effect of B4C grains in neutron shielding concrete. Several batches of a specialized neutron shielding concrete, with varying B4C grain sizes, were exposed to a 2 {\AA} neutron beam at the R2D2 test beamline at the Institute for Energy Technology located in Kjeller, Norway. The direct and scattered neutrons were detected with a neutron detector placed behind the concrete blocks and the results were compared to Geant4 simulations. The particle self-shielding effect was included in the Geant4 simulations by calculating effective neutron cross-sections during the Monte-Carlo simulation process. It is shown that this method well reproduces the measured results. Our results show that shielding calculations for low-energy neutrons using such materials would lead to an underestimate of the shielding required for a certain design scenario if the particle self-shielding effect is not included in the calculations.Comment: This manuscript version is made available under the CC-BY-NC-ND 4.0 license http://creativecommons.org/licenses/by-nc-nd/4.0

    Electron mobility in surface- and buried- channel flatband In<sub>0.53</sub>Ga<sub>0.47</sub>As MOSFETs with ALD Al<sub>2</sub>O<sub>3</sub> gate dielectric.

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    In this paper, we investigate the scaling potential of flatband III-V MOSFETs by comparing the mobility of surface and buried In&lt;sub&gt;0.53&lt;/sub&gt;Ga&lt;sub&gt;0.47&lt;/sub&gt;As channel devices employing an Atomic Layer Deposited (ALD) Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; gate dielectric and a delta-doped InGaAs/InAlAs/InP heterostructure. Peak electron mobilities of 4300 cm&lt;sup&gt;2&lt;/sup&gt;/V·s and 6600 cm&lt;sup&gt;2&lt;/sup&gt;/V·s at a carrier density of 3×1012 cm&lt;sup&gt;-2&lt;/sup&gt; for the surface and buried channel structures respectively were determined. In contrast to similarly scaled inversion-channel devices, we find that mobility in surface channel flatband structures does not drop rapidly with electron density, but rather high mobility is maintained up to carrier concentrations around 4x10&lt;sup&gt;12&lt;/sup&gt; cm&lt;sup&gt;-2&lt;/sup&gt; before slowly dropping to around 2000 cm&lt;sup&gt;2&lt;/sup&gt;/V·s at 1x10M&lt;sup&gt;13&lt;/sup&gt; cm&lt;sup&gt;-2&lt;/sup&gt;. We believe these to be world leading metrics for this material system and an important development in informing the III-V MOSFET device architecture selection process for future low power, highly scaled CM

    Storage Structures and Home Storage of Vegetables and Fruits.

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    16 p

    Storage Structures and Home Storage of Vegetables and Fruits.

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    16 p

    What does touch tell us about emotions in touchscreen-based gameplay?

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    This is the post-print version of the Article. The official published version can be accessed from the link below - Copyright @ 2012 ACM. It is posted here by permission of ACM for your personal use. Not for redistribution.Nowadays, more and more people play games on touch-screen mobile phones. This phenomenon raises a very interesting question: does touch behaviour reflect the player’s emotional state? If possible, this would not only be a valuable evaluation indicator for game designers, but also for real-time personalization of the game experience. Psychology studies on acted touch behaviour show the existence of discriminative affective profiles. In this paper, finger-stroke features during gameplay on an iPod were extracted and their discriminative power analysed. Based on touch-behaviour, machine learning algorithms were used to build systems for automatically discriminating between four emotional states (Excited, Relaxed, Frustrated, Bored), two levels of arousal and two levels of valence. The results were very interesting reaching between 69% and 77% of correct discrimination between the four emotional states. Higher results (~89%) were obtained for discriminating between two levels of arousal and two levels of valence
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