527 research outputs found
Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities
The bulk damage of p-type silicon detectors caused by high doses of gamma
irradiation has been studied. The study was carried out on three types of
n-in-p silicon diodes with comparable geometries but different initial
resistivities. This allowed to determine how different initial parameters of
studied samples influence radiation-induced changes in the measured
characteristics. The diodes were irradiated by a Cobalt-60 gamma source to
total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80
minutes at 60 {\deg}C. The Geant4 toolkit for simulation of the passage of
particles through matter was used to simulate the deposited energy homogeneity,
to verify the equal distribution of total deposited energies through all the
layers of irradiated samples, and to calculate the secondary electron spectra
in the irradiation box. The main goal of the study was to characterize the
gamma-radiation induced displacement damage by measuring current-voltage
characteristics (IV), and the evolution of the full depletion voltage with the
total ionizing dose, by measuring capacitance-voltage characteristics (CV). It
has been observed that the bulk leakage current increases linearly with total
ionizing dose, and the damage coefficient depends on the initial resistivity of
the silicon diode. The effective doping concentration and therefore full
depletion voltage significantly decreases with increasing total ionizing dose,
before starting to increase again at a specific dose. We assume that this
decrease is caused by the effect of acceptor removal. Another noteworthy
observation of this study is that the IV and CV measurements of the gamma
irradiated diodes do not reveal any annealing effect
Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds
We present first-principles calculations to predict several three dimensional
(3D) topological insulators in quaternary chalcogenide compounds which are made
of I-II-IV-VI compositions and in ternary compositions of
I-V-VI famatinite compounds. Among the large members of these two
families, we give examples of naturally occurring compounds which are mainly
Cu-based chalcogenides. We show that these materials are candidates of 3D
topological insulators or can be tuned to obtain topological phase transition
by manipulating the atomic number of the other cation and anion elements. A
band inversion can occur at a single point with considerably large
inversion strength, in addition to the opening of a bulk band gap throughout
the Brillouin zone. We also demonstrate that both of these families are related
to each other by cross-substitutions of cations in the underlying tetragonal
structure and that one can suitably tune their topological properties in a
desired manner.Comment: 7 pages, 4 figure
Structure peculiarities of cementite and their influence on the magnetic characteristics
The iron carbide is studied by the first-principle density functional
theory. It is shown that the crystal structure with the carbon disposition in a
prismatic environment has the lowest total energy and the highest energy of
magnetic anisotropy as compared to the structure with carbon in an octahedron
environment. This fact explains the behavior of the coercive force upon
annealing of the plastically deformed samples. The appearance of carbon atoms
in the octahedron environment can be revealed by Mossbauer experiment.Comment: 10 pages, 3 figures, 3 tables. submitted to Phys.Rev.
Substituting the main group element in cobalt - iron based Heusler alloys: CoFeAlSi
This work reports about electronic structure calculations for the Heusler
compound CoFeAlSi. Particular emphasis was put on the role of
the main group element in this compound. The substitution of Al by Si leads to
an increase of the number of valence electrons with increasing Si content and
may be seen as electron-doping. Self-consistent electronic structure
calculations were performed to investigate the consequences of the electron
doping for the magnetic properties. The series CoFeAlSi is
found to exhibit half-metallic ferromagnetism and the magnetic moment follows
the Slater-Pauling rule. It is shown that the electron-doping stabilises the
gap in the minority states for .Comment: J. Phys. D (accepted
Ferromagnetism in Fe-substituted spinel semiconductor ZnGaO
Motivated by the recent experimental observation of long range ferromagnetic
order at a relatively high temperature of 200K in the Fe-doped ZnGaO
semiconducting spinel, we propose a possible mechanism for the observed
ferromagnetism in this system. We show, supported by band structure
calculations, how a model similar to the double exchange model can be written
down for this system and calculate the ground state phase diagram for the two
cases where Fe is doped either at the tetrahedral position or at the octahedral
position. We find that in both cases such a model can account for a stable
ferromagnetic phase in a wide range of parameter space. We also argue that in
the limit of high Fe concentration at the tetrahedral positions a
description in terms of a two band model is essential. The two orbitals
and the hopping between them play a crucial role in stabilizing the
ferromagnetic phase in this limit. The case when Fe is doped simultaneously at
both the tetrahedral and the octahedral position is also discussed.Comment: 10 pages, 9 figures, added text, J. Phys. Cond. Mat. (to appear
Local moment versus Kondo behavior of the 4f-electrons in rare-earth iron oxypnictides
We consider the role played by the 4f states in the rare-earth oxyarsenides
REOFeAs (RE=Ce,Pr,Nd) and the oxyphosphate CeOFeP, using a first-principles
technique that combines the local density approximation and dynamical
mean-field theory (LDA+DMFT). In the Pr and Nd compounds, the 4f states are
located well below and above the Fermi level E_F, and essentially do not
interact with the iron 3d bands located near E_F, resulting in local moment
behavior. In the Ce compounds, our results reveal a qualitatively different
picture, with the 3d-4f hybridization being sufficiently strong to give rise to
an observable Kondo screening of the local 4f moment. Our LDA+DMFT electronic
structure calculations allow us to estimate the Kondo temperature T_K for both
CeOFeP and CeOFeAs. For the phosphate, the order of magnitude of our estimate
is consistent with the experimental observation of T_K around 10 K. At ambient
pressure, T_K is found to be negligibly small for CeOFeAs. Under applied
hydrostatic pressure, we predict an exponential increase of T_K which reaches
values comparable to the superconducting T_c around 40 K at pressures above 10
GPa. We conjecture that the competition between the Kondo effect and
superconductivity may be at the origin of the monotonous decrease of T_c
observed in CeOFeAs under pressure. We argue that the quantitative aspects of
this competition are inconsistent with a weak-coupling BCS description of the
superconductivity in the oxyarsenides.Comment: 6 pages, 3 figure
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