Study of Bulk Damage of High Dose Gamma Irradiated p-type Silicon Diodes with Various Resistivities

The bulk damage of p-type silicon detectors caused by high doses of gamma irradiation has been studied. The study was carried out on three types of n$^{+}$-in-p silicon diodes with comparable geometries but different initial resistivities. This allowed to determine how different initial parameters of studied samples influence radiation-induced changes in the measured characteristics. The diodes were irradiated by a Cobalt-60 gamma source to total ionizing doses ranging from 0.50 up to 8.28 MGy, and annealed for 80 minutes at 60 {\deg}C. The Geant4 toolkit for simulation of the passage of particles through matter was used to simulate the deposited energy homogeneity, to verify the equal distribution of total deposited energies through all the layers of irradiated samples, and to calculate the secondary electron spectra in the irradiation box. The main goal of the study was to characterize the gamma-radiation induced displacement damage by measuring current-voltage characteristics (IV), and the evolution of the full depletion voltage with the total ionizing dose, by measuring capacitance-voltage characteristics (CV). It has been observed that the bulk leakage current increases linearly with total ionizing dose, and the damage coefficient depends on the initial resistivity of the silicon diode. The effective doping concentration and therefore full depletion voltage significantly decreases with increasing total ionizing dose, before starting to increase again at a specific dose. We assume that this decrease is caused by the effect of acceptor removal. Another noteworthy observation of this study is that the IV and CV measurements of the gamma irradiated diodes do not reveal any annealing effect

Topological insulators in the quaternary chalcogenide compounds and ternary famatinite compounds

We present first-principles calculations to predict several three dimensional (3D) topological insulators in quaternary chalcogenide compounds which are made of I$_2$-II-IV-VI$_4$ compositions and in ternary compositions of I$_3$-V-VI$_4$ famatinite compounds. Among the large members of these two families, we give examples of naturally occurring compounds which are mainly Cu-based chalcogenides. We show that these materials are candidates of 3D topological insulators or can be tuned to obtain topological phase transition by manipulating the atomic number of the other cation and anion elements. A band inversion can occur at a single point $\Gamma$ with considerably large inversion strength, in addition to the opening of a bulk band gap throughout the Brillouin zone. We also demonstrate that both of these families are related to each other by cross-substitutions of cations in the underlying tetragonal structure and that one can suitably tune their topological properties in a desired manner.Comment: 7 pages, 4 figure

Structure peculiarities of cementite and their influence on the magnetic characteristics

The iron carbide $Fe_3C$ is studied by the first-principle density functional theory. It is shown that the crystal structure with the carbon disposition in a prismatic environment has the lowest total energy and the highest energy of magnetic anisotropy as compared to the structure with carbon in an octahedron environment. This fact explains the behavior of the coercive force upon annealing of the plastically deformed samples. The appearance of carbon atoms in the octahedron environment can be revealed by Mossbauer experiment.Comment: 10 pages, 3 figures, 3 tables. submitted to Phys.Rev.

Substituting the main group element in cobalt - iron based Heusler alloys: Co2_2FeAl1−x_{1-x}Six_x

This work reports about electronic structure calculations for the Heusler compound Co$_2$FeAl$_{1-x}$Si$_x$. Particular emphasis was put on the role of the main group element in this compound. The substitution of Al by Si leads to an increase of the number of valence electrons with increasing Si content and may be seen as electron-doping. Self-consistent electronic structure calculations were performed to investigate the consequences of the electron doping for the magnetic properties. The series Co$_2$FeAl$_{1-x}$Si$_x$ is found to exhibit half-metallic ferromagnetism and the magnetic moment follows the Slater-Pauling rule. It is shown that the electron-doping stabilises the gap in the minority states for $x=0.5$.Comment: J. Phys. D (accepted

Ferromagnetism in Fe-substituted spinel semiconductor ZnGa2_2O4_4

Motivated by the recent experimental observation of long range ferromagnetic order at a relatively high temperature of 200K in the Fe-doped ZnGa$_2$O$_4$ semiconducting spinel, we propose a possible mechanism for the observed ferromagnetism in this system. We show, supported by band structure calculations, how a model similar to the double exchange model can be written down for this system and calculate the ground state phase diagram for the two cases where Fe is doped either at the tetrahedral position or at the octahedral position. We find that in both cases such a model can account for a stable ferromagnetic phase in a wide range of parameter space. We also argue that in the limit of high Fe$^{2+}$ concentration at the tetrahedral positions a description in terms of a two band model is essential. The two $e_g$ orbitals and the hopping between them play a crucial role in stabilizing the ferromagnetic phase in this limit. The case when Fe is doped simultaneously at both the tetrahedral and the octahedral position is also discussed.Comment: 10 pages, 9 figures, added text, J. Phys. Cond. Mat. (to appear

Local moment versus Kondo behavior of the 4f-electrons in rare-earth iron oxypnictides

We consider the role played by the 4f states in the rare-earth oxyarsenides REOFeAs (RE=Ce,Pr,Nd) and the oxyphosphate CeOFeP, using a first-principles technique that combines the local density approximation and dynamical mean-field theory (LDA+DMFT). In the Pr and Nd compounds, the 4f states are located well below and above the Fermi level E_F, and essentially do not interact with the iron 3d bands located near E_F, resulting in local moment behavior. In the Ce compounds, our results reveal a qualitatively different picture, with the 3d-4f hybridization being sufficiently strong to give rise to an observable Kondo screening of the local 4f moment. Our LDA+DMFT electronic structure calculations allow us to estimate the Kondo temperature T_K for both CeOFeP and CeOFeAs. For the phosphate, the order of magnitude of our estimate is consistent with the experimental observation of T_K around 10 K. At ambient pressure, T_K is found to be negligibly small for CeOFeAs. Under applied hydrostatic pressure, we predict an exponential increase of T_K which reaches values comparable to the superconducting T_c around 40 K at pressures above 10 GPa. We conjecture that the competition between the Kondo effect and superconductivity may be at the origin of the monotonous decrease of T_c observed in CeOFeAs under pressure. We argue that the quantitative aspects of this competition are inconsistent with a weak-coupling BCS description of the superconductivity in the oxyarsenides.Comment: 6 pages, 3 figure