Luminescence characteristics of magnesium aluminate spinel crystals of different stoichiometry

We are grateful to Drs E. Vasil’chenko and A. Maaroos for the help with experiments and useful discussions. This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. In addition, the research leading to these results has received funding from the Estonian Research Council Institutional Research Funding IUT02-26.Magnesium aluminate spinel single crystals with different stoichiometry, MgAl2O4 (1:1 spinel) and MgO 2.5Al2O3 (1:2.5) were investigated using different optical methods (cathode-, photo- and thermally stimulated luminescence (TSL), optical absorption, "creation spectra" of TSL peaks and phosphorescence by VUV radiation). Low-temperature charge carrier traps and the position of intrinsic UV emission bands depend on the degree of stoichiometry. Antisite defects (ADs), Mg2+ or Al3+ located in a "wrong" cation site (Mg|A1 or Al|Mg) are the main as-grown structural defects, which serve also as efficient traps for electrons and holes as well as seeds for bound excitons. AD concentration is especially high in 1:2.5 spinel. There are several manifestations of ADs (electronic excitations near ADs) in the spectral region of 7-7.5 eV, slightly below the energy gap.Eesti Teadusagentuur IUT02-26; H2020 Euratom 633053; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Accumulation of radiation defects and modification of micromechanical properties under MgO crystal irradiation with swift 132Xe ions

This work has been carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014-2018 and 2019-2020 under grant agreement No. 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission. A.A. also acknowledges support via the project GF AP05134257 of Ministry of Education and Science of the Republic of Kazakhstan .Accumulation of F-type defects under irradiation of MgO crystals by 0.23-GeV 132Xe ions with fluence varying by three orders of magnitude has been investigated via the spectra of optical absorption and low-temperature cathodoluminescence. The number of single centers continuously increases with fluence without any marks of saturation. At the highest fluence, a mean volume concentration of 3.1 × 1019 and 3.35 × 1019 cm−3 is reached for F and F+ centers, respectively. The F+ emission strongly dominates in the cathodoluminescence of irradiated MgO and its enhancement with fluence is detected. However, the creation efficiency of the F2 aggregate centers is very low and fluence dependence has a complicated shape. Radiation-induced changes of micro-mechanical properties of the same samples have been analysed; the depth profiles of hardening correlate with the ion energy loss. A joint contribution of ionization and impact mechanisms in the formation of structural defects under MgO irradiation with Xe ions is considered.H2020 Euratom 2019-2020,633053,2014-2018,GF AP05134257; Ministry of Education and Science of the Republic of Kazakhstan GF AP05134257; Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Distinctive features of diffusion-controlled radiation defect recombination in stoichiometric magnesium aluminate spinel single crystals and transparent polycrystalline ceramics

This work has been performed within the framework of the EUROfusion Enabling Research project: ENR-MFE19.ISSP-UL-02 “Advanced experimental and theoretical analysis of defect evolution and structural disordering in optical and dielectric materials for fusion application”. The views and opinions expressed herein do not necessarily reflect those of the European Commission. Research of A.L, E.F.,, V.S and E.S has been partly supported by the Estonian Research Council grant (PUT PRG619); has been also carried out within the framework of the EUROfusion Consortium and has received funding from the Euratom research and training programme 2014–2018 and 2019–2020 under grant agreement No 633053. The views and opinions expressed herein do not necessarily reflect those of the European Commission.MgAl2O4 spinel is important optical material for harsh radiation environment and other important applications. The kinetics of thermal annealing of the basic electron (F, F+) and hole (V) centers in stoichiometric MgAl2O4 spinel irradiated by fast neutrons and protons is analyzed in terms of diffusion-controlled bimolecular reactions. Properties of MgAl2O4 single crystals and optical polycrystalline ceramics are compared. It is demonstrated that both transparent ceramics and single crystals, as well as different types of irradiation show qualitatively similar kinetics, but the effective migration energy Ea and pre-exponent D0 are strongly correlated. Such correlation is discussed in terms of the so-called Meyer-Neldel rule known in chemical kinetics of condensed matter. The results for the irradiated spinel are compared with those for sapphire, MgO and other radiation-resistant materials.Institute of Solid State Physics, University of Latvia as the Center of Excellence has received funding from the European Union’s Horizon 2020 Framework Programme H2020-WIDESPREAD-01-2016-2017-TeamingPhase2 under grant agreement No. 739508, project CAMART

Luminescence properties of undoped LiBaAlF6\mathrm{LiBaAlF_{6}} single crystals

This paper presents the results of the study of electronic excitations in undoped LiBaAlF6 single crystals by means of luminescence spectroscopy and complimentary optical methods. The intrinsic emission at 4.2 eV due to self-trapped excitons was identified. The fast nanosecond defect-related luminescence was revealed at 3.0 eV. Both emissions degrade under electron beam irradiation, the most probable reason of which is defect creation introducing an additional non-radiative relaxation channel prohibiting energy transfer to luminescence centers. These defects can be recovered and luminescence intensity restored at higher temperatures (>200 K). The permanent damage by electron beam irradiation results only in overall growth of the absorption coefficient in the whole 1.5–6.5 eV spectral region studied. The analysis of thermally stimulated luminescence glow curves in the temperature range of 5–410 K revealed two shallow charge carrier traps with the activation energies of 0.22 and 0.33 eV, respectively. The luminescence of an impurity peaked at 2.5 eV was found and tentatively assigned to an oxygen-related emission center