Magnetic and transport properties of the spin-state disordered oxide La0.8Sr0.2Co_{1-x}Rh_xO_{3-\delta}

We report measurements and analysis of magnetization, resistivity and thermopower of polycrystalline samples of the perovskite-type Co/Rh oxide La$_{0.8}$Sr$_{0.2}$Co$_{1-x}$Rh$_x$O$_{3-\delta}$. This system constitutes a solid solution for a full range of $x$,in which the crystal structure changes from rhombohedral to orthorhombic symmetry with increasing Rh content $x$. The magnetization data reveal that the magnetic ground state immediately changes upon Rh substitution from ferromagnetic to paramagnetic with increasing $x$ near 0.25, which is close to the structural phase boundary. We find that one substituted Rh ion diminishes the saturation moment by 9 $\mu_B$, which implies that one Rh$^{3+}$ ion makes a few magnetic Co$^{3+}$ ions nonmagnetic (the low spin state), and causes disorder in the spin state and the highest occupied orbital. In this disordered composition ($0.05\le x \le 0.75$), we find that the thermopower is anomalously enhanced below 50 K. In particular, the thermopower of $x$=0.5 is larger by a factor of 10 than those of $x$=0 and 1, and the temperature coefficient reaches 4 $\mu$V/K$^2$ which is as large as that of heavy-fermion materials such as CeRu$_2$Si$_2$.Comment: 8 pages, 6 figures, accepted to Phys. Rev.

Multilevel Analysis of Oscillation Motions in Active Regions of the Sun

We present a new method that combines the results of an oscillation study made in optical and radio observations. The optical spectral measurements in photospheric and chromospheric lines of the line-of-sight velocity were carried out at the Sayan Solar Observatory. The radio maps of the Sun were obtained with the Nobeyama Radioheliograph at 1.76 cm. Radio sources associated with the sunspots were analyzed to study the oscillation processes in the chromosphere-corona transition region in the layer with magnetic field B=2000 G. A high level of instability of the oscillations in the optical and radio data was found. We used a wavelet analysis for the spectra. The best similarities of the spectra of oscillations obtained by the two methods were detected in the three-minute oscillations inside the sunspot umbra for the dates when the active regions were situated near the center of the solar disk. A comparison of the wavelet spectra for optical and radio observations showed a time delay of about 50 seconds of the radio results with respect to optical ones. This implies a MHD wave traveling upward inside the umbral magnetic tube of the sunspot. Besides three-minute and five-minute ones, oscillations with longer periods (8 and 15 minutes) were detected in optical and radio records.Comment: 17 pages, 9 figures, accepted to Solar Physics (18 Jan 2011). The final publication is available at http://www.springerlink.co

Nano and micro Hall-effect sensors for room-temperature scanning hall probe microscopy

Cataloged from PDF version of article.GaAs/AlGaAs two-dimensional electron gas (GaAs-2DEG) Hall probes are impractical for sub-micron room-temperature scanning Hall microscopy (RT-SHPM), due to surface depletion effects that limit the Hall driving current and magnetic sensitivity (B in). Nano and micro Hall-effect sensors were fabricated using Bi and InSb thin films and shown to be practical alternatives to GaAs-2DEG probes for high resolution RT-SHPM. The GaAs-2DEG and InSb probes were fabricated using photolithography and the Bi probes by optical and focused ion beam lithography. Surface depletion effects limited the minimum feature size of GaAs-2DEG probes to similar to1.5 mum(2) with a maximum drive current I-max of similar to3 muA and B-min similar to 0.2 G/rootHz. The B-min of 1.5 mum(2) InSb Hall probes was 6 x 10(-1) G/rootHz at I-max of 100 muA. Further, 200 nm x 200 nm Bi probes yielded good RT-SHPM images of garnet films, with I-max and sensitivity of 40 muA and similar to0.80 G/rootHz, respectively. (C) 2004 Elsevier B.V. All rights reserved

High sensitivity and multifunctional micro-Hall sensors fabricated using InAlSb/InAsSb/InAlSb heterostructures

Further diversification of Hall sensor technology requires development of materials with high electron mobility and an ultrathin conducting layer very close to the material's surface. Here, we describe the magnetoresistive properties of micro-Hall devices fabricated using InAlSb/InAsSb/InAlSb heterostructures where electrical conduction was confined to a 30 nm-InAsSb two-dimensional electron gas layer. The 300 K electron mobility and sheet carrier concentration were 36 500 cm(2) V-1 s(-1) and 2.5 x 10(11) cm(-2), respectively. The maximum current-related sensitivity was 2 750 V A(-1) T-1, which was about an order of magnitude greater than AlGaAs/InGaAs pseudomorphic heterostructures devices. Photolithography was used to fabricate 1 mu m x 1 mu m Hall probes, which were installed into a scanning Hall probe microscope and used to image the surface of a hard disk

First-principles study on the origin of large thermopower in hole-doped LaRhO3 and CuRhO2

Based on first-principles calculations, we study the origin of the large thermopower in Ni-doped LaRhO3 and Mg-doped CuRhO2. We calculate the band structure and construct the maximally localized Wannier functions from which a tight binding Hamiltonian is obtained. The Seebeck coefficient is calculated within the Boltzmann's equation approach using this effective Hamiltonian. For LaRhO3, we find that the Seebeck coefficient remains nearly constant within a large hole concentration range, which is consistent with the experimental observation. For CuRhO2, the overall temperature dependence of the calculated Seebeck coefficient is in excellent agreement with the experiment. The origin of the large thermopower is discussed.Comment: 7 pages, to be published J. Phys.: Cond. Matt., Proc. QSD 200

Transport properties of the layered Rh oxide K_0.49RhO_2

We report measurements and analyses of resistivity, thermopower and Hall coefficient of single-crystalline samples of the layered Rh oxide K_0.49RhO_2. The resistivity is proportional to the square of temperature up to 300 K, and the thermopower is proportional to temperature up to 140 K. The Hall coefficient increases linearly with temperature above 100 K, which is ascribed to the triangular network of Rh in this compound. The different transport properties between Na_xCoO_2 and K_0.49RhO_2 are discussed on the basis of the different band width between Co and Rh evaluated from the magnetotransport.Comment: 3 figures, submitted to PR

Room-temperature scanning Hall probe microscope (RT-SHPM) imaging of garnet films using new high-performance InSb sensors

The room-temperature scanning Hall probe microscopy (RT-SHPM) imaging of garnet films using high-performance InSb sensors was discussed. The high-performance InSb micro-Hall sensors were fabricated by optical lithography. It was found that the room-temperature noise figure of the InSb sensors was 6-10 mG/√Hz, which was an order of magnitude better than GaAs-AlGaAs two-dimensional electron gas sensors