Magnetoconductivity of low-dimensional disordered conductors at the onset of the superconducting transition

Magnetoconductivity of the disordered two- and three-dimensional superconductors is addressed at the onset of superconducting transition. In this regime transport is dominated by the fluctuation effects and we account for the interaction corrections coming from the Cooper channel. In contrast to many previous studies we consider strong magnetic fields and various temperature regimes, which allow to resolve the existing discrepancies with the experiments. Specifically, we find saturation of the fluctuations induced magneto-conductivity for both two- and three-dimensional superconductors at already moderate magnetic fields and discuss possible dimensional crossover at the immediate vicinity of the critical temperature. The surprising observation is that closer to the transition temperature weaker magnetic field provides the saturation. It is remarkable also that interaction correction to magnetoconductivity coming from the Cooper channel, and specifically the so called Maki-Thompson contribution, remains to be important even away from the critical region.Comment: 4 pages, 1 figur

Entanglement entropy in one-dimensional disordered interacting system: The role of localization

The properties of the entanglement entropy (EE) in one-dimensional disordered interacting systems are studied. Anderson localization leaves a clear signature on the average EE, as it saturates on length scale exceeding the localization length. This is verified by numerically calculating the EE for an ensemble of disordered realizations using density matrix renormalization group (DMRG). A heuristic expression describing the dependence of the EE on the localization length, which takes into account finite size effects, is proposed. This is used to extract the localization length as function of the interaction strength. The localization length dependence on the interaction fits nicely with the expectations.Comment: 5 pages, 4 figures, accepted for publication in Physical Review Letter

Influence of trigonal warping on interference effects in bilayer graphene

Bilayer graphene (two coupled graphitic monolayers arranged according to Bernal stacking) is a two-dimensional gapless semiconductor with a peculiar electronic spectrum different from the Dirac spectrum in the monolayer material. In particular, the electronic Fermi line in each of its valleys has a strong p -> -p asymmetry due to trigonal warping, which suppresses the weak localization effect. We show that weak localization in bilayer graphene may be present only in devices with pronounced intervalley scattering, and we evaluate the corresponding magnetoresistance

Nonequilibrium mesoscopic conductance fluctuations

We investigate the amplitude of mesoscopic fluctuations of the differential conductance of a metallic wire at arbitrary bias voltage V. For non-interacting electrons, the variance increases with V. The asymptotic large-V behavior is \sim V/V_c (where eV_c=D/L^2 is the Thouless energy), in agreement with the earlier prediction by Larkin and Khmelnitskii. We find, however, that this asymptotics has a very small numerical prefactor and sets in at very large V/V_c only, which strongly complicates its experimental observation. This high-voltage behavior is preceded by a crossover regime, V/V_c \lesssim 30, where the conductance variance increases by a factor \sim 3 as compared to its value in the regime of universal conductance fluctuations (i.e., at V->0). We further analyze the effect of dephasing due to the electron-electron scattering on at high voltages. With the Coulomb interaction taken into account, the amplitude of conductance fluctuations becomes a non-monotonic function of V. Specifically, drops as 1/V for voltages V >> gV_c, where g is the dimensionless conductance. In this regime, the conductance fluctuations are dominated by quantum-coherent regions of the wire adjacent to the reservoirs.Comment: 14 pages, 4 figures. Fig.2 and one more appendix added, accepted for publication in PR

Interaction correction to the conductance of a ballistic conductor

In disordered metals, electron-electron interactions are the origin of a small correction to the conductivity, the "Altshuler-Aronov correction". Here we investigate the Altshuler-Aronov correction of a conductor in which the electron motion is ballistic and chaotic. We consider the case of a double quantum dot, which is the simplest example of a ballistic conductor in which the Altshuler-Aronov correction is nonzero. The fact that the electron motion is ballistic leads to an exponential suppression of the correction if the Ehrenfest time is larger than the mean dwell time or the inverse temperature.Comment: 4 pages, 2 figure

Crossover from diffusive to strongly localized regime in two-dimensional systems

We have studied the conductance distribution function of two-dimensional disordered noninteracting systems in the crossover regime between the diffusive and the localized phases. The distribution is entirely determined by the mean conductance, g, in agreement with the strong version of the single-parameter scaling hypothesis. The distribution seems to change drastically at a critical value very close to one. For conductances larger than this critical value, the distribution is roughly Gaussian while for smaller values it resembles a log-normal distribution. The two distributions match at the critical point with an often appreciable change in behavior. This matching implies a jump in the first derivative of the distribution which does not seem to disappear as system size increases. We have also studied 1/g corrections to the skewness to quantify the deviation of the distribution from a Gaussian function in the diffusive regime.Comment: 4 pages, 4 figure