1 research outputs found
Morphology Tailoring and Growth Mechanism of Indium-Rich InGaN/GaN Axial Nanowire Heterostructures by Plasma-Assisted Molecular Beam Epitaxy
We
investigate the growth mechanism of axially heterostructured
InGaN/GaN nanowires (NWs) as a function of the flux conditions. The
InGaN heterostructure morphology critically depends on the In/Ga flux
ratio affecting the local V/III ratio at the NW growth front. Locally
N-rich conditions are associated with tapered island-like morphologies,
while metal-rich conditions, leading to the formation of a stable
Indium adsorbed layer at the NW growth front, promote the growth of
heterostructures with a disk-like shape. Based on experimental results
and theoretical predictions, we demonstrate that this indium ad-layer
acts as a surfactant inducing a modification of the InGaN heterostructure
growth mode. The impact of flux conditions and strain relaxation on
the Indium incorporation are also addressed. The resulting insertions
present abrupt interfaces and a homogeneous In distribution for In
contents up to 40%