Broken inversion symmetry in van der Waals topological ferromagnetic metal iron germanium telluride

Inversion symmetry breaking is critical for many quantum effects and fundamental for spin-orbit torque, which is crucial for next-generation spintronics. Recently, a novel type of gigantic intrinsic spin-orbit torque has been established in the topological van-der-Waals (vdW) magnet iron germanium telluride. However, it remains a puzzle because no clear evidence exists for interlayer inversion symmetry breaking. Here, we report the definitive evidence of broken inversion symmetry in iron germanium telluride directly measured by the second harmonic generation (SHG) technique. Our data show that the crystal symmetry reduces from centrosymmetric P63/mmc to noncentrosymmetric polar P3m1 space group, giving the three-fold SHG pattern with dominant out-of-plane polarization. Additionally, the SHG response evolves from an isotropic pattern to a sharp three-fold symmetry upon increasing Fe deficiency, mainly due to the transition from random defects to ordered Fe vacancies. Such SHG response is robust against temperature, ensuring unaltered crystalline symmetries above and below the ferromagnetic transition temperature. These findings add crucial new information to our understanding of this interesting vdW metal, iron germanium telluride: band topology, intrinsic spin-orbit torque and topological vdW polar metal states.Comment: 32 pages, 9 figures, Accepted by Advanced Material

Flexoelectric control of a ferromagnetic metal

Electric fields have played a key role in discovering and controlling exotic electronic states of condensed matter. However, electric fields usually do not work in metals as free carriers tend to screen electrostatic fields. While a pseudo-electric field generated by inhomogeneous lattice strain, namely a flexoelectric field, can in principle work in all classes of materials, it remains experimentally unexplored in metals. Here, using heteroepitaxy and atomic-scale imaging, we show that flexoelectric fields can polarize a metallic oxide SrRuO3 with unexpectedly large Ru off-center displacements. We also observe that the flexoelectrically induced polar state of SrRuO3 leads to sizable lattice expansion, similar to the electrostrictive expansion caused by ionic displacements in dielectrics under an external electric field. We further suggest that flexoelectrically driven Ru off-centering promotes strong coupling between lattice and electronic degrees of freedom, possibly enhancing the ferromagnetism of SrRuO3. Beyond conventional electric fields, flexoelectric fields may universally engender novel electronic states and their control via pure atomic displacements in a nondestructive and fast manner.Comment: 33 pages, 13 figure

Influence of stacking disorder on cross-plane thermal transport properties in TMPS3 (TM = Mn, Ni, Fe)

© 2020 Author(s). We investigated the thermal transport properties of magnetic van der Waals materials, TMPS3 (TM = Mn, Ni, and Fe), using the time-domain thermoreflectance technique. We determined the cross-plane thermal conductivity, which turns out to be relatively low, i.e., about 1W m(-1) K-1 for all TMPS3 investigated. When compared with previous results of graphite and transition metal dichalcogenides (TMDs), thermal conductivity becomes smaller as it goes from graphite to TMDs to TMPS3, and the difference is larger at low temperature, e.g., around 50K. From the Callaway model analysis, we could attribute the large thermal conductivity reduction for TMPS3, particularly at low temperature, to the phonon scattering from the boundary. We actually confirmed the existence of the large population of the stacking faults with the cross-sectional transmission electron microscopy image of MnPS3. This suggests that intrinsic or extrinsic stacking faults formed in van der Waals materials and their heterostructures can play an important role in reducing the cross-plane thermal conductivity as a source of the boundary scattering11sci

Influence of stacking disorder on cross-plane thermal transport properties in TM

© 2020 Author(s). We investigated the thermal transport properties of magnetic van der Waals materials, TMPS3 (TM = Mn, Ni, and Fe), using the time-domain thermoreflectance technique. We determined the cross-plane thermal conductivity, which turns out to be relatively low, i.e., about 1W m(-1) K-1 for all TMPS3 investigated. When compared with previous results of graphite and transition metal dichalcogenides (TMDs), thermal conductivity becomes smaller as it goes from graphite to TMDs to TMPS3, and the difference is larger at low temperature, e.g., around 50K. From the Callaway model analysis, we could attribute the large thermal conductivity reduction for TMPS3, particularly at low temperature, to the phonon scattering from the boundary. We actually confirmed the existence of the large population of the stacking faults with the cross-sectional transmission electron microscopy image of MnPS3. This suggests that intrinsic or extrinsic stacking faults formed in van der Waals materials and their heterostructures can play an important role in reducing the cross-plane thermal conductivity as a source of the boundary scattering11sci

Flexoelectric polarizing and control of a ferromagnetic metal

Data for Figures 1, 3, 4, and