99 research outputs found
Time resolved pattern evolution in a large aperture laser
We have measured quasi-instantaneous transverse patterns in a broad aperture
laser. Non-ordered patterns yielding to boundary determined regular structures
in progressive time-integrated recording are observed. The linear analysis and
numerical integration of the full Maxwell-Bloch equations allow us to interpret
the features of the experiment. We show that this system being far from
threshold cannot be fully understood with a perturbative model.Comment: 7 pages, 5 GIF figures . To be published in Phys. Rev. Let
Refractive Index Dynamics Of Quantum Dot Based Waveguide Electroabsorbers
The refractive index dynamics of InAs/GaAs quantum dot based waveguide absorbers is studied using heterodyne pump-probe measurements. Absorption reduction due to the pump can be accompanied by either positive or negative refractive index changes depending on the wavelength used. This change in sign of the phase amplitude coupling can be understood by considering the atomlike nature of the quantum dot transitions involved
Stabilization of self-focusing instability in wide-aperture semiconductor lasers
A mechanism for the stabilization of the output of filamentary broad-area edge-emitting semiconductor lasers is analyzed experimentally and theoretically. This mechanism occurs when the carrier density is profiled in the transverse direction. The laser structure consisted of a wide-aperture edge-emitting laser diode operating in pulsed mode to avoid thermal guiding effects. The injection current profile was modified from the usual step-function case to a Lorentzian-like profile through the inclusion of a 10 mum p-type epitaxial spreading layer. The resulting nonlinear transverse mode is described and the possibility of its observation in two transverse dimensions is discussed
Experimental investigation of a bistable system in the presence of noise and delay
We experimentally analyze the behavior of a non-Markovian bistable system with noise, using a vertical cavity surface emitting laser with time-delayed optoelectronic feedback. The effects of the delayed feedback are observed in the probability distribution of the residence times of the two orthogonal polarization states, and in the polarization-resolved power spectrum. They agree well with recent theoretical predictions based on a two-state model with transition rates depending on an earlier state of the system. We also observe experimentally and explain theoretically that the residence time probability distribution deviates from exponential decay for residence times close to (and smaller than) the delay time.Peer ReviewedPostprint (published version
Electron and Hole Dynamics of InAs∕GaAsInAs∕GaAs Quantum Dot Semiconductor Optical Amplifiers
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs∕GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers
Electron and hole dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
Single-color and two-color pump-probe measurements are used to analyze carrier dynamics in InAs/GaAs quantum dot amplifiers. The study reveals that hole recovery and intradot electron relaxation occur on a picosecond time scale, while the electron capture time is on the order of 10 ps. A longer time scale of hundreds of picoseconds is associated with carrier recovery in the wetting layer, similar to that observed in quantum well semiconductor amplifiers. (c) 2007 American Institute of Physics. (DOI:10.1063/1.2771374
Dynamics of a semiconductor laser with optical feedback
We investigate both experimentally and theoretically the dynamics of a semiconductor laser with optical feedback in the low-frequency fluctuation regime. First we demonstrate that low-frequency fluctuations can be observed for both single and multimode operation of a semiconductor laser with optical feedback. The analysis of the fast dynamics associated with this low-frequency instability is well described by single-mode rate equations. In the multimode regime, fast pulsation is observed in every laser mode. In this case the fluctuations in total intensity are much smaller than those in the intensity of each individual mode, This indicates the presence of anticorrelations dynamics at high frequency between the different laser modes. (S1050-2947(99)08307-9)
Delay Induced Excitability
We analyse the stochastic dynamics of a bistable system under the influence
of time-delayed feedback. Assuming an asymmetric potential, we show the
existence of a regime in which the systems dynamic displays excitability by
calculating the relevant residence time distributions and correlation times.
Experimentally we then observe this behaviour in the polarization dynamics of a
vertical cavity surface emitting laser with opto-electronic feedback. Extending
these observations to two-dimensional systems with dispersive coupling we
finally show numerically that delay induced excitability can lead to the
appearance of propagating wave-fronts and spirals.Comment: 5 pages, 6 figure
Optical properties of hybrid quantum dot/quantum well active region based on GaAs system
We experimentally investigate the optical properties of a novel hybrid material/structure consisting of a GaInNAs quantum well and stacked InAs/InGaAs quantum dot layers on GaAs substrate. We demonstrate that the strong quantum confined Stark effect within the quantum well can effectively control well-dot detuning when reverse bias voltage is applied. With a combination of low-and room-temperature time resolved luminescence spectra we infer device absorption recovery time under 30 ps. These properties could be utilized in high-speed optoelectronics devices, in particular electro-absorption modulated lasers and reconfigurable multisection devices, where the hybrid quantum dots - quantum well material system could offer easily and rapidly interchangeable function, i.e., emission gain or variable attenuation, of each section depending on the external bias. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4752279
Phase dynamics of InAs/GaAs quantum dot semiconductor optical amplifiers
The gain and phase dynamics of InAs/GaAs quantum dot amplifiers are studied using single and two-color heterodyne pump probe spectroscopy. The relaxation of the wetting layer carrier density is shown to have a strong effect on the phase dynamics of both ground and excited state transients, while having a much weaker effect on the gain dynamics. In addition, the dynamical alpha factor may also display a constant value after an initial transient. Such behavior is strongly encouraging for reduced pattern effect operation in high speed optical networks. (c) 2007 American Institute of Physics.(DOI: 10.1063/1.2823589
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