Photoemission study of the SiO₂conversion mechanism to magnesium silicate

The objective of this work is to investigate interface chemistries which minimize the interfacial silicon oxide transition region at Si/high-k dielectric interfaces. We report on the mechanism by which a silicon native oxide layer is converted into magnesium silicate. The deposition of metal Mg onto a SiO native oxide surface resulted in the formation of a magnesium silicide in addition to substochiometric silicon oxides and a significant decrease in the oxidised silicon signal. Annealing to 300 °C resulted in the decomposition of the magnesium silicide, oxidation of the Mg, and the desorption of excess metallic Mg. Subsequent annealing to 500 °C resulted in converting the SiO2 into magnesium silicate. The results suggest that the decomposition of the Mg silicide in the presence of the residual native oxide facilitates silicate formation at 500 °C. Due to the reported thermal stability of Mg silicate it is suggested that this process may be beneficial in modifying the interface characteristics of the Si/high-k dielectric interface which has potentially significant implications for future semiconductor device generations

High resolution photoemission study of SiOx/Si(111) interface disruption following in situ HfO₂deposition

We report on an in situ high resolution core level photoemission study of the early stages of interface formation between an ultrathin SiOx layer ( ∼ 0.3 nm) grown on the atomically clean Si(111) surface and a HfO2 dielectric layer. Si 2p core level spectra acquired at 130 eV photon energy reveal evidence of a chemically shifted component on the lower binding energy side of the substrate peak which is attributed to interface defect states resulting from the incorporation of silicon atoms from the substrate into the interfacial oxide at room temperature. This evidence of Si/SiOx interface disruption would be expected to increase charge carrier scattering mechanisms in the silicon and contribute to the generally observed mobility degradation in high-k stacks with ultrathin silicon oxide interface layers

Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO2 layers with an equivalent oxide thickness of 8Å. The layers show maximum operating voltages in excess of 1V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage

Atomic resolved material displacement on graphite surfaces by scanning tunnelling microscopy

Atomic scale modifications and subsequent atomic resolution imaging has been achieved on the highly oriented pyrolytic graphite surface in air. Application of short pulse voltages, above a minimum threshold voltage of 3.5 V, across the tunneling gap results in the displacement of a layer or more of atoms to form a hole and create a neighboring mound or ‘‘nanodot’’ from the displaced atoms. We have found a correlation between the hole and ‘‘nanodot’’ volume at the atomic level and observe an asymmetric displacement of material in all cases of feature creation. Nanofeatures as small as four carbon atoms at beta sites have been created. Our experimental observations are consistent with the modification process depending on the gradient in the electric field induced by the rise time of the bias pulse voltage and not the pulse duration. Interesting faceting behavior has also been observed around some hole edges. Tip bias pulsing sometimes induced a tip, and not a surface modification, resulting in a change in the observed tunneling image

On-orbit NDE: A novel approach to tube weld inspection

The challenge of fabrication and repair of structures in space must be met if we are to utilize and maintain long-duration space facilities. Welding techniques have been demonstrated to provide the most reliable means to accomplish this task. Over the past few years, methods have been developed to perform orbital tube welding employing space-based welding technology pioneered by the former Soviet Union. Welding can result in the formation of defects, which threaten the structural integrity of the welded joint. Implementation of welding on-orbit, therefore, must also include methods to evaluate the quality and integrity of the welded joints. To achieve this goal, the development of an on-orbit tube weld inspection system, utilizing alternating current field measurement (ACFM) technology, has been under taken. This paper describes the development of the ACFM on-orbit tube weld inspection tool. Topics discussed include: requirements for on-orbit NDE, basic theory of ACFM, its advantages over other NDE methods for on-orbit applications, and the ACFM NDE system design. System operation and trial inspection results are also discussed. Future work with this technology is also considered

Degradation and breakdown characteristics of thin MgO dielectric layers

MgO has been suggested as a possible high-k dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed. Stress induced leakage current measurements indicate that the low measured Weibull slopes of the TDDB distributions for both n-type and p-type devices cannot be attributed to a lower trap generation rate than for SiO2. This suggests that much fewer defects are required to trigger breakdown in MgO under voltage stress than is the case for SiO2 or other metal-oxide dielectrics. This in turn explains the progressive nature of the breakdown in these films which is observed both in this work and elsewhere. The reason fewer defects are required is attributed to the morphology of the films

Sulfur-induced c(4×4) reconstruction of the Si(001) surface studied by scanning tunneling microscopy

Scanning tunneling microscopy and low-energy electron diffraction have been used to study the adsorption and subsequent thermal desorption of molecular sulfur from the Si(001) surface. Room-temperature adsorption of sulfur resulted in the formation of an overlayer, displaying a high density of vacancies or defects, with the underlying Si(001) surface retaining the (2×1) reconstruction. Annealing this surface to 325 °C leads to the desorption of the sulfur overlayer and the appearance of coexisting c(4×4) and (2×1) surface reconstructions. Our data suggest that the c(4×4) reconstruction is an adsorbate-induced structure in which the sulfur creates defects during the desorption process. High-resolution filled- and empty-state images of the c(4×4) surface lead us to propose a missing-dimer defect model for this reconstruction