Optical properties of Southern Hemisphere aerosols: Report of the joint CSIRO/NASA study

This study was made in support of the LAWS and GLOBE programs, which aim to design a suitable Doppler lidar system for measuring global winds from a satellite. Observations were taken from 5 deg S to 45 deg S along and off the E and SE Australian coast, thus obtaining representative samples over a large latitude range. Observations were made between 0 and 6 km altitude of aerosol physical and chemical properties in situ from the CSIRO F-27 aircraft; of lidar backscatter coefficients at 10.6 micron wavelength from the F-27 aircraft; of lidar backscatter profiles at 0.694 microns at Sale, SE Australia; and of lidar backscatter profiles at 0.532 microns at Cowley Beach, NE Australia. Both calculations and observations in the free troposphere gave a backscatter coefficient of 1-2 x 10 to the -11/m/sr at 10.6 microns, although the accuracies of the instruments were marginal at this level. Equivalent figures were 2-8 x 10 to the -9/m/sr (aerosol) and 9 x 10 to the -9 to 2 x 10 to the -8/m/sr (lidar) at 0.694 microns wavelength at Sale; and 3.7 x 10 to the -9/m/sr (aerosol) and 10 to the -8 to 10 to the -7/m/sr (lidar) at 0.532 microns wavelength at Cowley Beach. The measured backscatter coefficients at 0.694 and 0.532 microns were consistently higher than the values calculated from aerosol size distributions by factors of typically 2 to 10

Wind measurement system

A system for remotely measuring vertical and horizontal winds present in discrete volumes of air at selected locations above the ground is described. A laser beam is optically focused in range by a telescope, and the output beam is conically scanned at an angle about a vertical axis. The backscatter, or reflected light, from the ambient particulates in a volume of air, the focal volume, is detected for shifts in wavelength, and from these, horizontal and vertical wind components are computed

Review Article: Molecular Beam Epitaxy of Lattice-Matched InAlAs and InGaAs Layers on InP (111)A, (111)B, and (110)

For more than 50 years, research into III–V compound semiconductors has focused almost exclusively on materials grown on (001)-oriented substrates. In part, this is due to the relative ease with which III–Vs can be grown on (001) surfaces. However, in recent years, a number of key technologies have emerged that could be realized, or vastly improved, by the ability to also grow high-quality III–Vs on (111)- or (110)-oriented substrates These applications include: next-generation field-effect transistors, novel quantum dots, entangled photon emitters, spintronics, topological insulators, and transition metal dichalcogenides. The first purpose of this paper is to present a comprehensive review of the literature concerning growth by molecular beam epitaxy (MBE) of III–Vs on (111) and (110) substrates. The second is to describe our recent experimental findings on the growth, morphology, electrical, and optical properties of layers grown on non-(001) InP wafers. Taking InP(111)A, InP(111)B, and InP(110) substrates in turn, the authors systematically discuss growth of both In0.52Al0.48As and In0.53Ga0.47As on these surfaces. For each material system, the authors identify the main challenges for growth, and the key growth parameter–property relationships, trends, and interdependencies. The authors conclude with a section summarizing the MBE conditions needed to optimize the structural, optical and electrical properties of GaAs, InAlAs and InGaAs grown with (111) and (110) orientations. In most cases, the MBE growth parameters the authors recommend will enable the reader to grow high-quality material on these increasingly important non-(001) surfaces, paving the way for exciting technological advances

Structural and luminescence characteristics of cycled submonolayer InAs/GaAs quantum dots with room-temperature emission at 1.3 μm

Quantum dots were grown by molecular beam epitaxy on GaAs substrates using a cycled submonolayer InAs/GaAs deposition technique. Their structural and luminescence characteristics have been compared with conventional self-organized dots. The room-temperature luminescence spectra are characterized by a ground state transition at 1.3 μm and additional transitions corresponding to excited states. Cross-sectional transmission electron microscopy indicates that no dislocations are formed if the total InAs thickness is less than 5–6 monolayers. Temperature dependence of the photoluminescence indicates that both types of quantum dots may have nonradiative defects, caused by segregation and related phenomena. © 1999 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70897/2/JAPIAU-86-11-6135-1.pd

Excess noise in GaAs and AlGaAs avalanche photodiodes with GaSb absorption regions—composite structures grown using interfacial misfit arrays

Interfacial misfit arrays were embedded within two avalanche photodiode (APD) structures. This allowed GaSb absorption layers to be combined with wide-bandgap multiplication regions, consisting of GaAs and Al0.8Ga0.2As, respectively. The GaAs APD represents the simplest case. The Al0.8Ga0.2As APD shows reduced dark currents of 5.07 μAcm−2 at 90% of the breakdown voltage, and values for effective below 0.2. Random-path-length modeled excess noise is compared with experimental data, for both samples. The designs could be developed further, allowing operation to be extended to longer wavelengths, using other established absorber materials which are lattice matched to GaSb

Room Temperature Continuous Wave Lasing in Nanopillar Photonic Crystal Cavities

We demonstrate room temperature continuous wave lasing in bottom-up photonic crystal cavities formed by patterned III-V nanopillars. Single-cell high-Q photonic crystal cavities are formed with nanopillars by selective-area epitaxy. Control of the nanopillar geometry and heterostructures allows for high-Q and large confinement factor, resulting in a low threshold power density of 75 W/cm^2 at 1040 nm emission wavelength

Anomalous quantum confined Stark effects in stacked InAs/GaAs self-assembled quantum dots

Vertically stacked and coupled InAs/GaAs self-assembled quantum dots (SADs) are predicted to exhibit a strong non-parabolic dependence of the interband transition energy on the electric field, which is not encountered in single SAD structures nor in other types of quantum structures. Our study based on an eight-band strain-dependent ${\bf k}\cdot{\bf p}$ Hamiltonian indicates that this anomalous quantum confined Stark effect is caused by the three-dimensional strain field distribution which influences drastically the hole states in the stacked SAD structures.Comment: 4 pages, 4 figure

Room-Temperature Quantum Emitter in Aluminum Nitride

A device that is able to produce single photons is a fundamental building block for a number of quantum technologies. Significant progress has been made in engineering quantum emission in the solid state, for instance, using semiconductor quantum dots as well as defect sites in bulk and two-dimensional materials. Here we report the discovery of a room-temperature quantum emitter embedded deep within the band gap of aluminum nitride. Using spectral, polarization, and photon-counting time-resolved measurements we demonstrate bright ($>10^5$ counts per second), pure ($g^{(2)}(0) < 0.2$), and polarized room-temperature quantum light emission from color centers in this commercially important semiconductor