THE MECHANICAL ANALYSIS OF HDPE NET CAGE BY TEST AND CALCULATION

To reduce the structural failure risk of net cages under extreme sea conditions, this study analysed the yield phenomenon under mooring constraints and excessive or long-term wave loads. The floating collar deforms by shear when a twisted 1 m for the 8-point type and 5 m for the four point type. The structural strength in the Z-vertical direction is one-fifth of that in the X-horizontal direction. The maximum deformation is mainly on the two ends of the cap ned pipes. The critical points of the guardrail may reach the yield stress when the wave height is 1.1 m, while the height of the floating pipe is 5 m. The float can be damaged more easily when there is torsion or shear deformation caused by irregular waves. The results provide guidelines for the optimised structural design of net cages, which by increasing the number of mooring points and cap neds as well as reducing the welding points and structural mutation points, can improve the ultimate bearing capacity and fatigue reliability of the cage float

A Spin-dependent Machine Learning Framework for Transition Metal Oxide Battery Cathode Materials

Owing to the trade-off between the accuracy and efficiency, machine-learning-potentials (MLPs) have been widely applied in the battery materials science, enabling atomic-level dynamics description for various critical processes. However, the challenge arises when dealing with complex transition metal (TM) oxide cathode materials, as multiple possibilities of d-orbital electrons localization often lead to convergence to different spin states (or equivalently local minimums with respect to the spin configurations) after ab initio self-consistent-field calculations, which causes a significant obstacle for training MLPs of cathode materials. In this work, we introduce a solution by incorporating an additional feature - atomic spins - into the descriptor, based on the pristine deep potential (DP) model, to address the above issue by distinguishing different spin states of TM ions. We demonstrate that our proposed scheme provides accurate descriptions for the potential energies of a variety of representative cathode materials, including the traditional Li$_x$TMO$_2$ (TM=Ni, Co, Mn, $x$=0.5 and 1.0), Li-Ni anti-sites in Li$_x$NiO$_2$ ($x$=0.5 and 1.0), cobalt-free high-nickel Li$_x$Ni$_{1.5}$Mn$_{0.5}$O$_4$ ($x$=1.5 and 0.5), and even a ternary cathode material Li$_x$Ni$_{1/3}$Co$_{1/3}$Mn$_{1/3}$O$_2$ ($x$=1.0 and 0.67). We highlight that our approach allows the utilization of all ab initio results as a training dataset, regardless of the system being in a spin ground state or not. Overall, our proposed approach paves the way for efficiently training MLPs for complex TM oxide cathode materials

Design of Efficient Exciplex Emitters by Decreasing the Energy Gap Between the Local Excited Triplet (3LE) State of the Acceptor and the Charge Transfer (CT) States of the Exciplex

A series of thermally activated delayed fluorescence (TADF) exciplex based on the TX-TerPy were constructed. The electronic coupling between the triplet local excited states (3LE) of the donors and acceptor and the charge transfer states had a great influence on the triplet exciton harvesting and ΦPL. Herein, based on this strategy, three donor molecules TAPC, TCTA, and m-MTDATA were selected. The local triplet excited state (3LE) of the three donors are 2.93, 2.72 and 2.52 eV in pure films. And the 3LE of TX-TerPy is 2.69 eV in polystyrene film. The energy gap between the singlet charge transfer (1CT) states of TAPC:TX-TerPy (7:1), TCTA:TX-TerPy (7:1) and the 3LE of TX-TerPy are 0.30 eV and 0.20 eV. Finally, the ΦPL of TAPC:TX-TerPy (7:1) and TCTA:TX-TerPy (7:1) are 65.2 and 69.6%. When we changed the doping concentration of the exciplex from 15% to 50%, the ratio of the triplet decreased, and ΦPL decreased by half, perhaps due to the increased energy gap between 1CT and 3LE. Therefore, optimizing the 1CT, 3CT, and 3LE facilitated the efficient exciplex TADF molecules

MST4 Phosphorylation of ATG4B Regulates Autophagic Activity, Tumorigenicity, and Radioresistance in Glioblastoma

ATG4B stimulates autophagy by promoting autophagosome formation through reversible modification of ATG8. We identify ATG4B as a substrate of mammalian sterile20-like kinase (STK) 26/MST4. MST4 phosphorylates ATG4B at serine residue 383, which stimulates ATG4B activity and increases autophagic flux. Inhibition of MST4 or ATG4B activities using genetic approaches or an inhibitor of ATG4B suppresses autophagy and the tumorigenicity of glioblastoma (GBM) cells. Furthermore, radiation induces MST4 expression, ATG4B phosphorylation, and autophagy. Inhibiting ATG4B in combination with radiotherapy in treating mice with intracranial GBM xenograft markedly slows tumor growth and provides a significant survival benefit. Our work describes an MST4-ATG4B signaling axis that influences GBM autophagy and malignancy, and whose therapeutic targeting enhances the anti-tumor effects of radiotherapy., • MST4 kinase regulates the growth, sphere formation, and tumorigenicity of GBM cells • MST4 stimulates autophagy by activating ATG4B through phosphorylation of ATG4B S383 • Radiation increases MST4 expression and ATG4B phosphorylation, inducing autophagy • Inhibiting ATG4B enhances the anti-tumor effects of radiotherapy in GBM PDX models , Huang et al. show that radiation induces MST4 expression and that MST4 phosphorylates ATG4B at serine 383, which increases ATG4B activity and autophagic flux. Inhibition of ATG4B reduces autophagy and tumorigenicity of glioblastoma (GBM) cells and improves the impact of radiotherapy on GBM growth in mice

第791回 千葉医学会例会・第22回 麻酔科例会・第44回 千葉麻酔懇話会 9.

Correlations of plasma PIM-1 levels and clinicopathological parameters. (XLSX 11 kb

Surface Morphology Evolution Mechanisms of InGaN/GaN Multiple Quantum Wells with Mixture N2/H2-Grown GaN Barrier

This is an Open Access article distributed under the terms of the Creative Commons Attribution 4.0 International License (http://creativecommons.org/licenses/by/4.0/), which permits unrestricted use, distribution, and reproduction in any medium, provided you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.Surface morphology evolution mechanisms of InGaN/GaN multiple quantum wells (MQWs) during GaN barrier growth with different hydrogen (H2) percentages have been systematically studied. Ga surface-diffusion rate, stress relaxation, and H2 etching effect are found to be the main affecting factors of the surface evolution. As the percentage of H2 increases from 0 to 6.25%, Ga surface-diffusion rate and the etch effect are gradually enhanced, which is beneficial to obtaining a smooth surface with low pits density. As the H2 proportion further increases, stress relaxation and H2 over- etching effect begin to be the dominant factors, which degrade surface quality. Furthermore, the effects of surface evolution on the interface and optical properties of InGaN/GaN MQWs are also profoundly discussed. The comprehensive study on the surface evolution mechanisms herein provides both technical and theoretical support for the fabrication of high-quality InGaN/GaN heterostructures.Peer reviewe