8,453 research outputs found

    The Ultraluminous X-ray Sources near the Center of M82

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    We report the identification of a recurrent ultraluminous X-ray source (ULX), a highly absorbed X-ray source (possibly a background AGN), and a young supernova remnant near the center of the starburst galaxy M82. From a series of Chandra observations taken from 1999 to 2005, we found that the transient ULX first appeared in 1999 October. The source turned off in 2000 January, but later reappeared and has been active since then. The X-ray luminosity of this source varies from below the detection level (~2.5e38 erg/s) to its active state in between ~7e39 erg/s and 1.3e40 erg/s (in the 0.5-10 keV energy band) and shows unusual spectral changes. The X-ray spectra of some Chandra observations are best fitted with an absorbed power-law model with photon index ranging from 1.3 to 1.7. These spectra are similar to those of Galactic black hole binary candidates seen in the low/hard state except that a very hard spectrum was seen in one of the observations. By comparing with near infrared images taken with the Hubble Space Telescope, the ULX is found to be located within a young star cluster. Radio imaging indicates that it is associated with a H II region. We suggest that the ULX is likely to be a > 100 solar mass intermediate-mass black hole in the low/hard state. In addition to the transient ULX, we also found a highly absorbed hard X-ray source which is likely to be an AGN and an ultraluminous X-ray emitting young supernova remnant which may be related to a 100-year old gamma-ray burst event, within 2 arcsec of the transient ULX.Comment: 9 pages, 8 figures. Accepted for publication in Ap

    A Simple Iterative Algorithm for Parsimonious Binary Kernel Fisher Discrimination

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    By applying recent results in optimization theory variously known as optimization transfer or majorize/minimize algorithms, an algorithm for binary, kernel, Fisher discriminant analysis is introduced that makes use of a non-smooth penalty on the coefficients to provide a parsimonious solution. The problem is converted into a smooth optimization that can be solved iteratively with no greater overhead than iteratively re-weighted least-squares. The result is simple, easily programmed and is shown to perform, in terms of both accuracy and parsimony, as well as or better than a number of leading machine learning algorithms on two well-studied and substantial benchmarks

    The activation energy for GaAs/AlGaAs interdiffusion

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    Copyright 1997 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. This article appeared in Journal of Applied Physics 82, 4842 (1997) and may be found at

    A Low Temperature Nonlinear Optical Rotational Anisotropy Spectrometer for the Determination of Crystallographic and Electronic Symmetries

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    Nonlinear optical generation from a crystalline material can reveal the symmetries of both its lattice structure and underlying ordered electronic phases and can therefore be exploited as a complementary technique to diffraction based scattering probes. Although this technique has been successfully used to study the lattice and magnetic structures of systems such as semiconductor surfaces, multiferroic crystals, magnetic thin films and multilayers, challenging technical requirements have prevented its application to the plethora of complex electronic phases found in strongly correlated electron systems. These requirements include an ability to probe small bulk single crystals at the micron length scale, a need for sensitivity to the entire nonlinear optical susceptibility tensor, oblique light incidence reflection geometry and incident light frequency tunability among others. These measurements are further complicated by the need for extreme sample environments such as ultra low temperatures, high magnetic fields or high pressures. In this review we present a novel experimental construction using a rotating light scattering plane that meets all the aforementioned requirements. We demonstrate the efficacy of our scheme by making symmetry measurements on a micron scale facet of a small bulk single crystal of Sr2_2IrO4_4 using optical second and third harmonic generation.Comment: 8 pages, 5 figure

    A topological insulator surface under strong Coulomb, magnetic and disorder perturbations

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    Three dimensional topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap as demonstrated via spin-resolved ARPES measurements . This highly unusual surface environment provides a rich ground for the discovery of novel physical phenomena. Here we present the first controlled study of the topological insulator surfaces under strong Coulomb, magnetic and disorder perturbations. We have used interaction of iron, with a large Coulomb state and significant magnetic moment as a probe to \textit{systematically test the robustness} of the topological surface states of the model topological insulator Bi2_2Se3_3. We observe that strong perturbation leads to the creation of odd multiples of Dirac fermions and that magnetic interactions break time reversal symmetry in the presence of band hybridization. We also present a theoretical model to account for the altered surface of Bi2_2Se3_3. Taken collectively, these results are a critical guide in manipulating topological surfaces for probing fundamental physics or developing device applications.Comment: 14 pages, 4 Figures. arXiv admin note: substantial text overlap with arXiv:1009.621

    Broadband stimulated four-wave parametric conversion on a tantalum pentoxide photonic chip

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    We exploit the large third order nonlinear susceptibility (?(3) or “Chi 3”) of tantalum pentoxide (Ta2O5) planar waveguides and realize broadband optical parametric conversion on-chip. We use a co-linear pump-probe configuration and observe stimulated four wave parametric conversion when seeding either in the visible or the infrared. Pumping at 800 nm we observe parametric conversion over a broad spectral range with the parametric idler output spanning from 1200 nm to 1600 nm in infrared wavelengths and from 555 nm to 600 nm in visible wavelengths. Our demonstration of on-chip stimulated four wave parametric conversion introduces Ta2O5 as a novel material for broadband integrated nonlinear photonic circuit applications
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