Correlation between dielectric constant and chemical structure of sodium silicate glasses

Journal URL: http://jap.aip.org/jap/staff.js

The quantum dynamic capacity formula of a quantum channel

The dynamic capacity theorem characterizes the reliable communication rates of a quantum channel when combined with the noiseless resources of classical communication, quantum communication, and entanglement. In prior work, we proved the converse part of this theorem by making contact with many previous results in the quantum Shannon theory literature. In this work, we prove the theorem with an "ab initio" approach, using only the most basic tools in the quantum information theorist's toolkit: the Alicki-Fannes' inequality, the chain rule for quantum mutual information, elementary properties of quantum entropy, and the quantum data processing inequality. The result is a simplified proof of the theorem that should be more accessible to those unfamiliar with the quantum Shannon theory literature. We also demonstrate that the "quantum dynamic capacity formula" characterizes the Pareto optimal trade-off surface for the full dynamic capacity region. Additivity of this formula simplifies the computation of the trade-off surface, and we prove that its additivity holds for the quantum Hadamard channels and the quantum erasure channel. We then determine exact expressions for and plot the dynamic capacity region of the quantum dephasing channel, an example from the Hadamard class, and the quantum erasure channel.Comment: 24 pages, 3 figures; v2 has improved structure and minor corrections; v3 has correction regarding the optimizatio

Controlling orbital moment and spin orientation in CoO layers by strain

We have observed that CoO films grown on different substrates show dramatic differences in their magnetic properties. Using polarization dependent x-ray absorption spectroscopy at the Co L$_{2,3}$ edges, we revealed that the magnitude and orientation of the magnetic moments strongly depend on the strain in the films induced by the substrate. We presented a quantitative model to explain how strain together with the spin-orbit interaction determine the 3d orbital occupation, the magnetic anisotropy, as well as the spin and orbital contributions to the magnetic moments. Control over the sign and direction of the strain may therefore open new opportunities for applications in the field of exchange bias in multilayered magnetic films

Orbital-assisted metal-insulator transition in VO2_{2}

We found direct experimental evidence for an orbital switching in the V 3d states across the metal-insulator transition in VO$_{2}$. We have used soft-x-ray absorption spectroscopy at the V $L_{2,3}$ edges as a sensitive local probe, and have determined quantitatively the orbital polarizations. These results strongly suggest that, in going from the metallic to the insulating state, the orbital occupation changes in a manner that charge fluctuations and effective band widths are reduced, that the system becomes more 1-dimensional and more susceptible to a Peierls-like transition, and that the required massive orbital switching can only be made if the system is close to a Mott insulating regime

A topological insulator surface under strong Coulomb, magnetic and disorder perturbations

Three dimensional topological insulators embody a newly discovered state of matter characterized by conducting spin-momentum locked surface states that span the bulk band gap as demonstrated via spin-resolved ARPES measurements . This highly unusual surface environment provides a rich ground for the discovery of novel physical phenomena. Here we present the first controlled study of the topological insulator surfaces under strong Coulomb, magnetic and disorder perturbations. We have used interaction of iron, with a large Coulomb state and significant magnetic moment as a probe to \textit{systematically test the robustness} of the topological surface states of the model topological insulator Bi$_2$Se$_3$. We observe that strong perturbation leads to the creation of odd multiples of Dirac fermions and that magnetic interactions break time reversal symmetry in the presence of band hybridization. We also present a theoretical model to account for the altered surface of Bi$_2$Se$_3$. Taken collectively, these results are a critical guide in manipulating topological surfaces for probing fundamental physics or developing device applications.Comment: 14 pages, 4 Figures. arXiv admin note: substantial text overlap with arXiv:1009.621

A note on Zolotarev optimal rational approximation for the overlap Dirac operator

We discuss the salient features of Zolotarev optimal rational approximation for the inverse square root function, in particular, for its applications in lattice QCD with overlap Dirac quark. The theoretical error bound for the matrix-vector multiplication $H_w (H_w^2)^{-1/2}Y$ is derived. We check that the error bound is always satisfied amply, for any QCD gauge configurations we have tested. An empirical formula for the error bound is determined, together with its numerical values (by evaluating elliptic functions) listed in Table 2 as well as plotted in Figure 3. Our results suggest that with Zolotarev approximation to $(H_w^2)^{-1/2}$, one can practically preserve the exact chiral symmetry of the overlap Dirac operator to very high precision, for any gauge configurations on a finite lattice.Comment: 23 pages, 5 eps figures, v2:minor clarifications, and references added, to appear in Phys. Rev.

A Universal Intrinsic Scale of Hole Concentration for High-Tc Cuprates

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the Cu valency. We find two characteristic scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; upper pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc cuprates, Tc depends on the number of layers, therefore the inter-layer coupling, in each individual system.Comment: 11 pages, 9 figures, accepted for publication in Physical Review

Determination of the orbital moment and crystal field splitting in LaTiO3_{3}

Utilizing a sum-rule in a spin-resolved photoelectron spectroscopic experiment with circularly polarized light, we show that the orbital moment in LaTiO$_3$ is strongly reduced both below and above the N\'{e}el temperature. Using Ti $L_{2,3}$ x-ray absorption spectroscopy as a local probe, we found that the crystal field splitting in the $t_{2g}$ subshell is about 0.12-0.30 eV. This large splitting does not facilitate the formation of an orbital liquid