Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

The existence of an uncontrolled electron accumulation layer near the surface of InN thin films is an obstacle for the development of reliable InN-based devices for use in narrow-bandgap optoelectronics. In this article, we show that this can be regulated by modulating the surface of the InN grown on GaN(001). By increasing the surface-to-volume ratio, we can demonstrate a reduction in the surface carrier concentration from ∼1018 to ∼1017 cm–3. These controlled changes are despite the idea that donor-type surface states, which contribute to conduction band electrons are reported to be the main origin of the surface charge density. Additionally, by evaluating the surface carrier concentration through modeling of photoluminescence (PL) spectroscopy, we have found a failure of the Burstein–Moss theory. Conversely, modeling of the longitudinal optical phonon–plasmon coupled modes measured using Raman spectroscopy, simulations of InN structures using the k·p method, and Hall effect measurements, where possible, showed an excellent correlation of the surface electron concentrations. The large inhomogeneous broadening in the PL, which overwhelms any broadening due to the Burstein–Moss effect, is understood to be the result of varying Stark shifts due to varying strain throughout high surface-to-volume nanostructures, which dramatically affects the spatially indirect nature of the electron–hole recombination. Finally, our findings demonstrate how the electron population of 2D and 3D InN nanostructures can be tuned by structural features, such as porosity and/or the surface-to-volume ratio

Electron Accumulation Tuning by Surface-to-Volume Scaling of Nanostructured InN Grown on GaN(001) for Narrow-Bandgap Optoelectronics

The existence of an uncontrolled electron accumulation layer near the surface of InN thin films is an obstacle for the development of reliable InN-based devices for use in narrow-bandgap optoelectronics. In this article, we show that this can be regulated by modulating the surface of the InN grown on GaN(001). By increasing the surface-to-volume ratio, we can demonstrate a reduction in the surface carrier concentration from ∼1018 to ∼1017 cm–3. These controlled changes are despite the idea that donor-type surface states, which contribute to conduction band electrons are reported to be the main origin of the surface charge density. Additionally, by evaluating the surface carrier concentration through modeling of photoluminescence (PL) spectroscopy, we have found a failure of the Burstein–Moss theory. Conversely, modeling of the longitudinal optical phonon–plasmon coupled modes measured using Raman spectroscopy, simulations of InN structures using the k·p method, and Hall effect measurements, where possible, showed an excellent correlation of the surface electron concentrations. The large inhomogeneous broadening in the PL, which overwhelms any broadening due to the Burstein–Moss effect, is understood to be the result of varying Stark shifts due to varying strain throughout high surface-to-volume nanostructures, which dramatically affects the spatially indirect nature of the electron–hole recombination. Finally, our findings demonstrate how the electron population of 2D and 3D InN nanostructures can be tuned by structural features, such as porosity and/or the surface-to-volume ratio