Fully Digital Ternary Content Addressable Memory using Ratio-less SRAM Cells and Hierarchical-AND Matching Comparator for Ultra-low-voltage Operation

A 36-bit x 32-entry fully digital ternaly content addressable memory (TCAM) using the Ratio-less 12-transistor SRAM (RL-12T-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed for ultra-low-voltage operation. The minimum operating supply voltage of 0.25V which is the less than half of the conventional TCAM was experimentally confirmed by the developed test chip.2017 International Conference on Solid State Devices and Materials (SSDM 2017), September 19-22, 2017, Sendai, Miyagi, Japa

Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors

Levels of Two Earthy and Musty Odor Compounds, 2-Methylisoborneol and Geosmin, in Wastewater and Concentration Variations during Treatment

We determined the concentrations of 2-methylisoborneol (2-MIB) and geosmin in final effluent from wastewater treatment plants in Kyoto City, Japan, investigating variations during treatment. The concentrations of 2-MIB and geosmin in final effluent were 5.1-29.8 and 3.9-13.9 ng/L, respectively. Geosmin concentrations in primary effluent were higher than those in influent. The concentration of 2-MIB increased in the reactors, while that of geosmin decreased. The anaerobic-anoxic-oxic and step-feed biological nitrogen removal processes lowered 2-MIB and geosmin concentrations more than did the anaerobic-oxic activated sludge process. Other factors regulating the concentrations of earthy and musty odor compounds may include activated sludge flowing from the secondary settling tank, changes in total nitrogen removal efficiency, anaerobic conditions in reactors or secondary settling tanks, and deterioration of activated sludge, including by formation of a scum layer

Radon exhalation from soils in the subtropical region of Japan

The Third Asian and Oceanic Congree on Radiation Protectio

Fully Digital Ternary Content Addressable Memory using Ratio-less SRAM Cells and Hierarchical-AND Matching Comparator for Ultra-low-voltage Operation

A 36-bit x 32-entry fully digital ternaly content addressable memory (TCAM) using the Ratio-less 12-transistor SRAM (RL-12T-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed for ultra-low-voltage operation. The minimum operating supply voltage of 0.25V which is the less than half of the conventional TCAM was experimentally confirmed by the developed test chip.2017 International Conference on Solid State Devices and Materials (SSDM 2017), September 19-22, 2017, Sendai, Miyagi, Japa

Design and measurement of fully digital ternary content addressable memory using ratioless static random access memory cells and hierarchical-AND matching comparator

A 36-bit × 32-entry fully digital ternary content addressable memory (TCAM) using the ratioless static random access memory (RL-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed. Since its fully complementary and digital operation enables the effect of device variabilities to be avoided, it can operate with a quite low supply voltage. A test chip incorporating a conventional TCAM and a proposed 24-transistor ratioless TCAM (RL-TCAM) cells and HAMCs was developed using a 0.18 µm CMOS process. The minimum operating voltage of 0.25 V of the developed RL-TCAM, which is less than half of that of the conventional TCAM, was measured via the conventional CMOS push–pull output buffers with the level-shifting and flipping technique using optimized pull-up voltage and resistors