Fully Digital Ternary Content Addressable Memory using Ratio-less SRAM Cells and Hierarchical-AND Matching Comparator for Ultra-low-voltage Operation

Abstract

A 36-bit x 32-entry fully digital ternaly content addressable memory (TCAM) using the Ratio-less 12-transistor SRAM (RL-12T-SRAM) technology and fully complementary hierarchical-AND matching comparators (HAMCs) was developed for ultra-low-voltage operation. The minimum operating supply voltage of 0.25V which is the less than half of the conventional TCAM was experimentally confirmed by the developed test chip.2017 International Conference on Solid State Devices and Materials (SSDM 2017), September 19-22, 2017, Sendai, Miyagi, Japa

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