Method of forming a multiple layer dielectric and a hot film sensor therewith

The invention is a method of forming a multiple layer dielectric for use in a hot-film laminar separation sensor. The multiple layer dielectric substrate is formed by depositing a first layer of a thermoelastic polymer such as on an electrically conductive substrate such as the metal surface of a model to be tested under cryogenic conditions and high Reynolds numbers. Next, a second dielectric layer of fused silica is formed on the first dielectric layer of thermoplastic polymer. A resistive metal film is deposited on selected areas of the multiple layer dielectric substrate to form one or more hot-film sensor elements to which aluminum electrical circuits deposited upon the multiple layered dielectric substrate are connected

Method of forming multi-element thin hot film sensors on polyimide film

The invention comprises a method of forming a multi-element, thin hot film sensor on a polyimide film. The sensor is formed by first cleaning one surface of the polyimide. Then, under a continuous vacuum, the surface is simultaneously cleaned by ion bombardment while nickel is deposited by evaporation. The ion beam cleaning is discontinued and copper is then deposited to an initial thickness by evaporation without a break in the vacuum. The vacuum is then removed and a final thickness of copper is deposited by plating. Sensor patterns are then defined in the nickel and copper layers using conventional photolithography and etching techniques

Growth of high-quality thin-film Ge single crystals by plasma-enhanced chemical vapor deposition

Thin-film Ge single crystals (approx. 10 microns) have been epitaxially grown on polished NaCl(100) substrates at 450C by using plasma-enhanced chemical vapor deposition. Films on approximately 1 sq cm and larger were separated from the NaCl by either melting the salt or by differential shear stress upon cooling to room temperature. The ordered growth of the Ge was found to be most sensitive to the initial plasma power and to the continuum flow dynamics within the carbon susceptor. The films were visually specular and exhibited a high degree of crysalline order when examined by X-ray diffraction. The films were found to be p-type with a carrier concentration of approximately 3 x 10 to the 16th power/cu cm, a resistivity of 0.11 ohm-cm, and a Hall hole mobility of 1820 sq cm/v/s at room temperature. Vacuum firing minimized the primary contaminant, Na, and corresponding lowered the carrier concentration to 4 x 10 to the 14th power/cu cm