Electrospun PVDF/aromatic HBP of 4th gen based flexible and self-powered TENG for wearable energy harvesting and health monitoring

Abstract In recent times, high-performance wearable electronic devices that can transform mechanical force into electrical energy for biomedical monitoring applications are receiving an increasing amount of attention. In the present study, we focused on a flexible, self-powered and wearable triboelectric nanogenerator (TENG) based on electrospun polyvinylidene fluoride (PVDF)/aromatic hyperbranched polyester of 4th generation (Ar.HBP-G4, 0–40 wt.-% w.r.t. PVDF content) blend nanoweb as tribo-negative layer and melt-blown thermoplastic polyurethane (TPU) as tribo-positive layer for energy harvesting and human health monitoring applications. Among the varying Ar.HBP-G4 content used, incorporation of Ar.HBP-G4 (10 wt.-%) in PVDF (P-Ar.HBP-G4-10) showed higher increase in the triboelectric output voltage when compared to pristine PVDF and other Ar.HBP-G4 weight ratios. The optimized P-Ar.HBP-G4-10/TPU based TENG exhibited a peak-to-peak voltage (V p-p ) of 124.4 V under an applied load of 9.8 N and frequency 1 Hz which is superior to many other TENGs reported elsewhere. Higher triboelectric performance of P-Ar.HBP-G4 blend based TENG compared to that of neat PVDF is attributed to the effect of Ar.HBP-G4-10 in enhancing the degree of crystallinity and polar β-crystalline phase content (98.3%) in PVDF. The ability of the TENG to power up portable electronic devices is demonstrated when it is powered for 750 s while connected through a capacitor and a rectifier, and the TENG was able to operate 45 light-emitting diodes directly. Evaluation of the triboelectric output of the TENG device attached to different parts of the human body reveal significantly better output voltage and sensitivity for human health monitoring. The results of this work pave a new way to develop TENG based on P-Ar.HBP-G4 nanowebs for sustainable energy generation and wearable healthcare monitoring systems

Crystallization and phase separation kinetics in blends of linear low-density polyethylene copolymers

We have systematically studied the crystallization and liquid-liquid phase separation (LLPS) kinetics in statistical copolymer blends of poly(ethylene-co-hexene) (PEH) and poly(ethylene-co-butene) (PEB) using primarily optical microscopy. The PEH/PEB blends exhibit upper critical solution temperature (UCST) in the melt and crystallization temperature below the UCST. The time evolution of the characteristic morphology for both crystallization and LLPS is recorded for blends at various compositions and following a quench from initial homogenous melts at high temperature to various lower temperatures. The crystallization kinetics is measured as the linear growth rate of the super structural crystals, whereas the LLPS kinetics is measured as the linear growth rate of the characteristic length of the late-stage spinodal decomposition. The composition dependence crystallization kinetics, G, shows very different characteristics at low and high isothermal crystallization temperature. Below 116°C, G decreases with increasing PEB content in the blend, implying primarily the composition effect on materials transport; whereas at above 116°C, G shows a minimum at about the critical composition for LLPS, implying the influence of the LLPS. On the other hand, LLPS kinetics at 130°C is relatively invariant at different compositions in the two-phase regime. The length scale at which domains are kinetically pinned, however, depends strongly on the composition. In a blend near critical composition, a kinetics crossover is shown to separate the crystallization dominant and phase separation dominant morphology as isothermal temperature increases. © 2004 Elsevier Ltd. All rights reserved

Neutron Reflectivity from the Monolayer of SAN Random Copolymer

The detailed structural aspects of the monolayer of SAN random copolymer with 22.6 wt% AN content at the air/water interface were investigated using neutron reflectivity(NR) technique. NR data at various surface pressures were analyzed to obtain the thickness, the density, and the concentration distribution. Well defined double-layered structure could fit the data

Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO2 layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10−7 A/cm2) SiO2 layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm2/(V s), an on/off ratio of ∼107, a threshold voltage of −1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm2/(V s) and on/off ratio of ∼107

Optimization of a Solution-Processed SiO₂ Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

We report on the optimization of the plasma treatment conditions for a solution-processed silicon dioxide gate insulator for application in zinc oxide thin film transistors (TFTs). The SiO₂ layer was formed by spin coating a perhydropolysilazane (PHPS) precursor. This thin film was subsequently thermally annealed, followed by exposure to an oxygen plasma, to form an insulating (leakage current density of ∼10⁻⁷ A/cm²) SiO₂ layer. Optimized ZnO TFTs (40 W plasma treatment of the gate insulator for 10 s) possessed a carrier mobility of 3.2 cm²/(V s), an on/off ratio of ∼10⁷, a threshold voltage of −1.3 V, and a subthreshold swing of 0.2 V/decade. In addition, long-term exposure (150 min) of the pre-annealed PHPS to the oxygen plasma enabled the maximum processing temperature to be reduced from 180 to 150 °C. The resulting ZnO TFT exhibited a carrier mobility of 1.3 cm²/(V s) and on/off ratio of ∼10⁷