Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Jan. - 31 Mar. 1971

Lithium donor density gradient measurements for prediction of lithium cell behavior after electron irradiation and recoverabilit

Action of lithium in radiation hardened silicon solar cells Quarterly report, 23 Apr. - 15 Jul. 1968

Recovery properties of lithium containing p-n silicon solar cells after radiation damag

Action of lithium in radiation-hardened silicon solar cells Quarterly report, 16 Jul. - 15 Oct. 1968

Action of lithium in recovery of irradiated silicon solar cell

Study to determine and improve design for lithium-doped solar cells Quarterly report, 1 Apr. - 30 Jun. 1970

Lithium action effects on spontaneous annealing of radiation damage in bulk silicon and silicon solar cell

The interrelation of process techniques and space radiation effects in metal-insulator-semiconductor structures Final report, 21 Apr. 1966 - 31 Jul. 1967

Interrelation of process techniques and space radiation effects in metal oxide semiconductor

Radiation damage in lithium-containing solar cells Final report, 21 Jun. 1966 - 20 Mar. 1968

Interaction of lithium with defects induced in silicon solar cells by one MeV electron bombardmen

Radiation Monitoring in Mixed Environments at CERN: from the IRRAD6 Facility to the LHC Experiments

RadFET and p-i-n diode semiconductor dosimeters from different manufacturers will be used for radiation monitoring at the Experiments of the CERN LHC accelerator. In this work these sensors were exposed over three months in the CERN-IRRAD6 facility that provides mixed high-energy particles at low rates. The aim was to validate the operation of such sensors in a radiation field where the conditions are close to the ones expected inside full working LHC particle detectors. The results of this long-term irradiation campaign are presented, discussed and compared with measurements by other dosimetric means as well as Monte Carlo simulations. Finally, the integration of several dosimetric devices in one sensor carrier is also presented