Donor Electron Wave Functions for Phosphorus in Silicon: Beyond Effective Mass Theory

We calculate the electronic wave-function for a phosphorus donor in silicon by numerical diagonalisation of the donor Hamiltonian in the basis of the pure crystal Bloch functions. The Hamiltonian is calculated at discrete points localised around the conduction band minima in the reciprocal lattice space. Such a technique goes beyond the approximations inherent in the effective-mass theory, and can be modified to include the effects of altered donor impurity potentials, externally applied electro-static potentials, as well as the effects of lattice strain. Modification of the donor impurity potential allows the experimentally known low-lying energy spectrum to be reproduced with good agreement, as well as the calculation of the donor wavefunction, which can then be used to calculate parameters important to quantum computing applications.Comment: 10 pages, 5 figure

Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells

We present an effective mass theory for SiGe/Si/SiGe quantum wells, with an emphasis on calculating the valley splitting. The theory introduces a valley coupling parameter, $v_v$, which encapsulates the physics of the quantum well interface. The new effective mass parameter is computed by means of a tight binding theory. The resulting formalism provides rather simple analytical results for several geometries of interest, including a finite square well, a quantum well in an electric field, and a modulation doped two-dimensional electron gas. Of particular importance is the problem of a quantum well in a magnetic field, grown on a miscut substrate. The latter may pose a numerical challenge for atomistic techniques like tight-binding, because of its two-dimensional nature. In the effective mass theory, however, the results are straightforward and analytical. We compare our effective mass results with those of the tight binding theory, obtaining excellent agreement.Comment: 13 pages, 7 figures. Version submitted to PR

The negatively charged nitrogen-vacancy centre in diamond: the electronic solution

The negatively charged nitrogen-vacancy centre is a unique defect in diamond that possesses properties highly suited to many applications, including quantum information processing, quantum metrology, and biolabelling. Although the unique properties of the centre have been extensively documented and utilised, a detailed understanding of the physics of the centre has not yet been achieved. Indeed there persists a number of points of contention regarding the electronic structure of the centre, such as the ordering of the dark intermediate singlet states. Without a sound model of the centre's electronic structure, the understanding of the system's unique dynamical properties can not effectively progress. In this work, the molecular model of the defect centre is fully developed to provide a self consistent model of the complete electronic structure of the centre. The application of the model to describe the effects of electric, magnetic and strain interactions, as well as the variation of the centre's fine structure with temperature, provides an invaluable tool to those studying the centre and a means to design future empirical and ab initio studies of this important defect.Comment: 24 pages, 6 figures, 10 table

Loss of Spin Entanglement For Accelerated Electrons in Electric and Magnetic Fields

Using an open quantum system we calculate the time dependence of the concurrence between two maximally entangled electron spins with one accelerated uniformly in the presence of a constant magnetic field and the other at rest and isolated from fields. We find at high Rindler temperature the proper time for the entanglement to be extinguished is proportional to the inverse of the acceleration cubed.Comment: 10 pages, 4 figures, appendix and other discussion added, fixed some typographical errors and some references were correcte

High speed quantum gates with cavity quantum electrodynamics

Cavity quantum electrodynamic schemes for quantum gates are amongst the earliest quantum computing proposals. Despite continued progress, and the dramatic recent demonstration of photon blockade, there are still issues with optimal coupling and gate operation involving high-quality cavities. Here we show dynamic control techniques that allow scalable cavity-QED based quantum gates, that use the full bandwidth of the cavities. When applied to quantum gates, these techniques allow an order of magnitude increase in operating speed, and two orders of magnitude reduction in cavity Q, over passive cavity-QED architectures. Our methods exploit Stark shift based Q-switching, and are ideally suited to solid-state integrated optical approaches to quantum computing.Comment: 4 pages, 3 figures, minor revision

Precision characterisation of two-qubit Hamiltonians via entanglement mapping

We show that the general Heisenberg Hamiltonian with non-uniform couplings can be characterised by mapping the entanglement it generates as a function of time. Identification of the Hamiltonian in this way is possible as the coefficients of each operator control the oscillation frequencies of the entanglement function. The number of measurements required to achieve a given precision in the Hamiltonian parameters is determined and an efficient measurement strategy designed. We derive the relationship between the number of measurements, the resulting precision and the ultimate discrete error probability generated by a systematic mis-characterisation, when implementing two-qubit gates for quantum computing.Comment: 6 Pages, 3 figure

Two-Body Random Ensembles: From Nuclear Spectra to Random Polynomials

The two-body random ensemble (TBRE) for a many-body bosonic theory is mapped to a problem of random polynomials on the unit interval. In this way one can understand the predominance of 0+ ground states, and analytic expressions can be derived for distributions of lowest eigenvalues, energy gaps, density of states and so forth. Recently studied nuclear spectroscopic properties are addressed.Comment: 8 pages, 4 figures. To appear in Physical Review Letter

Relation of amino acid transport to sodium-ion concentration

Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/31964/1/0000006.pd