Analytic Solution for the Ground State Energy of the Extensive Many-Body Problem

A closed form expression for the ground state energy density of the general extensive many-body problem is given in terms of the Lanczos tri-diagonal form of the Hamiltonian. Given the general expressions of the diagonal and off-diagonal elements of the Hamiltonian Lanczos matrix, $\alpha_n(N)$ and $\beta_n(N)$, asymptotic forms $\alpha(z)$ and $\beta(z)$ can be defined in terms of a new parameter $z\equiv n/N$ ($n$ is the Lanczos iteration and $N$ is the size of the system). By application of theorems on the zeros of orthogonal polynomials we find the ground-state energy density in the bulk limit to be given in general by ${\cal E}_0 = {\rm inf}\,\left[\alpha(z) - 2\,\beta(z)\right]$.Comment: 10 pages REVTex3.0, 3 PS figure

Matterwave Transport Without Transit

Classically it is impossible to have transport without transit, i.e., if the points one, two and three lie sequentially along a path then an object moving from one to three must, at some point in time, be located at two. However, for a quantum particle in a three-well system it is possible to transport the particle between wells one and three such that the probability of finding it at any time in the classically accessible state in well two is negligible. We consider theoretically the analogous scenario for a Bose-Einstein condensate confined within a three well system. In particular, we predict the adiabatic transportation of an interacting Bose-Einstein condensate of 2000 Li atoms from well one to well three without transiting the allowed intermediate region. To an observer of this macroscopic quantum effect it would appear that, over a timescale of the order of one second, the condensate had transported, but not transited, a macroscopic distance of 20 microns between wells one and three.Comment: 6 pages, 4 figure

Loss of Spin Entanglement For Accelerated Electrons in Electric and Magnetic Fields

Using an open quantum system we calculate the time dependence of the concurrence between two maximally entangled electron spins with one accelerated uniformly in the presence of a constant magnetic field and the other at rest and isolated from fields. We find at high Rindler temperature the proper time for the entanglement to be extinguished is proportional to the inverse of the acceleration cubed.Comment: 10 pages, 4 figures, appendix and other discussion added, fixed some typographical errors and some references were correcte

Spin properties of dense near-surface ensembles of nitrogen-vacancy centres in diamond

We present a study of the spin properties of dense layers of near-surface nitrogen-vacancy (NV) centres in diamond created by nitrogen ion implantation. The optically detected magnetic resonance contrast and linewidth, spin coherence time, and spin relaxation time, are measured as a function of implantation energy, dose, annealing temperature and surface treatment. To track the presence of damage and surface-related spin defects, we perform in situ electron spin resonance spectroscopy through both double electron-electron resonance and cross-relaxation spectroscopy on the NV centres. We find that, for the energy ($4-30$~keV) and dose ($5\times10^{11}-10^{13}$~ions/cm$^2$) ranges considered, the NV spin properties are mainly governed by the dose via residual implantation-induced paramagnetic defects, but that the resulting magnetic sensitivity is essentially independent of both dose and energy. We then show that the magnetic sensitivity is significantly improved by high-temperature annealing at $\geq1100^\circ$C. Moreover, the spin properties are not significantly affected by oxygen annealing, apart from the spin relaxation time, which is dramatically decreased. Finally, the average NV depth is determined by nuclear magnetic resonance measurements, giving $\approx10$-17~nm at 4-6 keV implantation energy. This study sheds light on the optimal conditions to create dense layers of near-surface NV centres for high-sensitivity sensing and imaging applications.Comment: 12 pages, 7 figure

Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors

Band bending is a central concept in solid-state physics that arises from local variations in charge distribution especially near semiconductor interfaces and surfaces. Its precision measurement is vital in a variety of contexts from the optimisation of field effect transistors to the engineering of qubit devices with enhanced stability and coherence. Existing methods are surface sensitive and are unable to probe band bending at depth from surface or bulk charges related to crystal defects. Here we propose an in-situ method for probing band bending in a semiconductor device by imaging an array of atomic-sized quantum sensing defects to report on the local electric field. We implement the concept using the nitrogen-vacancy centre in diamond, and map the electric field at different depths under various surface terminations. We then fabricate a two-terminal device based on the conductive two-dimensional hole gas formed at a hydrogen-terminated diamond surface, and observe an unexpected spatial modulation of the electric field attributed to a complex interplay between charge injection and photo-ionisation effects. Our method opens the way to three-dimensional mapping of band bending in diamond and other semiconductors hosting suitable quantum sensors, combined with simultaneous imaging of charge transport in complex operating devices.Comment: This is a pre-print of an article published in Nature Electronics. The final authenticated version is available online at https://dx.doi.org/10.1038/s41928-018-0130-

Long-range adiabatic quantum state transfer through a linear array of quantum dots

We introduce an adiabatic long-range quantum communication proposal based on a quantum dot array. By adiabatically varying the external gate voltage applied on the system, the quantum information encoded in the electron can be transported from one end dot to another. We numerically solve the Schr\"odinger equation for a system with a given number of quantum dots. It is shown that this scheme is a simple and efficient protocol to coherently manipulate the population transfer under suitable gate pulses. The dependence of the energy gap and the transfer time on system parameters is analyzed and shown numerically. We also investigate the adiabatic passage in a more realistic system in the presence of inevitable fabrication imperfections. This method provides guidance for future realizations of adiabatic quantum state transfer in experiments.Comment: 7 pages, 7 figure