Analytic Solution for the Ground State Energy of the Extensive Many-Body Problem

A closed form expression for the ground state energy density of the general extensive many-body problem is given in terms of the Lanczos tri-diagonal form of the Hamiltonian. Given the general expressions of the diagonal and off-diagonal elements of the Hamiltonian Lanczos matrix, $\alpha_n(N)$ and $\beta_n(N)$, asymptotic forms $\alpha(z)$ and $\beta(z)$ can be defined in terms of a new parameter $z\equiv n/N$ ($n$ is the Lanczos iteration and $N$ is the size of the system). By application of theorems on the zeros of orthogonal polynomials we find the ground-state energy density in the bulk limit to be given in general by ${\cal E}_0 = {\rm inf}\,\left[\alpha(z) - 2\,\beta(z)\right]$.Comment: 10 pages REVTex3.0, 3 PS figure

Towards visualisation of central-cell-effects in scanning-tunnelling-microscope images of subsurface dopant qubits in silicon

Atomic-scale understanding of phosphorous donor wave functions underpins the design and optimisation of silicon based quantum devices. The accuracy of large-scale theoretical methods to compute donor wave functions is dependent on descriptions of central-cell-corrections, which are empirically fitted to match experimental binding energies, or other quantities associated with the global properties of the wave function. Direct approaches to understanding such effects in donor wave functions are of great interest. Here, we apply a comprehensive atomistic theoretical framework to compute scanning tunnelling microscopy (STM) images of subsurface donor wave functions with two central-cell-correction formalisms previously employed in the literature. The comparison between central-cell models based on real-space image features and the Fourier transform profiles indicate that the central-cell effects are visible in the simulated STM images up to ten monolayers below the silicon surface. Our study motivates a future experimental investigation of the central-cell effects via STM imaging technique with potential of fine tuning theoretical models, which could play a vital role in the design of donor-based quantum systems in scalable quantum computer architectures.Comment: Nanoscale 201

Modal expansions and non-perturbative quantum field theory in Minkowski space

We introduce a spectral approach to non-perturbative field theory within the periodic field formalism. As an example we calculate the real and imaginary parts of the propagator in 1+1 dimensional phi^4 theory, identifying both one-particle and multi-particle contributions. We discuss the computational limits of existing diagonalization algorithms and suggest new quasi-sparse eigenvector methods to handle very large Fock spaces and higher dimensional field theories.Comment: new material added, 12 pages, 6 figure

Quantum computing with nearest neighbor interactions and error rates over 1%

Large-scale quantum computation will only be achieved if experimentally implementable quantum error correction procedures are devised that can tolerate experimentally achievable error rates. We describe a quantum error correction procedure that requires only a 2-D square lattice of qubits that can interact with their nearest neighbors, yet can tolerate quantum gate error rates over 1%. The precise maximum tolerable error rate depends on the error model, and we calculate values in the range 1.1--1.4% for various physically reasonable models. Even the lowest value represents the highest threshold error rate calculated to date in a geometrically constrained setting, and a 50% improvement over the previous record.Comment: 4 pages, 8 figure

Measurable quantum geometric phase from a rotating single spin

We demonstrate that the internal magnetic states of a single nitrogen-vacancy defect, within a rotating diamond crystal, acquire geometric phases. The geometric phase shift is manifest as a relative phase between components of a superposition of magnetic substates. We demonstrate that under reasonable experimental conditions a phase shift of up to four radians could be measured. Such a measurement of the accumulation of a geometric phase, due to macroscopic rotation, would be the first for a single atom-scale quantum system.Comment: 5 pages, 2 figures: Accepted for publication in Physical Review Letter

Effects of J-gate potential and interfaces on donor exchange coupling in the Kane quantum computer architecture

We calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron-electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and the hyperfine interaction - both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the device parameters varied provides relevant information for the experimental design of these devices.Comment: 15 pages, 15 figures. Accepted for Journal of Physics: Condensed Matte