Semiconductor saturable absorbers for ultrafast THz signals

We demonstrate saturable absorber behavior of n-type semiconductors GaAs, GaP and Ge in THz frequency range at room temperature using nonlinear THz spectroscopy. The saturation mechanism is based on a decrease in electron conductivity of semiconductors at high electron momentum states, due to conduction band nonparabolicity and scattering into satellite valleys in strong THz fields. Saturable absorber parameters, such as linear and non-saturable transmission, and saturation fluence, are extracted by fits to a classic saturable absorber model. Further, we observe THz pulse shortening, and an increase of the group refractive index of the samples at higher THz pulse peak fields.Comment: Submitted to Appl. Phys. Lett

Exploiting the Symmetry of the Resonator Mode to Enhance PELDOR Sensitivity.

Pulsed electron paramagnetic resonance (EPR) spectroscopy using microwaves at two frequencies can be employed to measure distances between pairs of paramagnets separated by up to 10 nm. The method, combined with site-directed mutagenesis, has become increasingly popular in structural biology for both its selectivity and capability of providing information not accessible through more standard methods such as nuclear magnetic resonance and X-ray crystallography. Despite these advantages, EPR distance measurements suffer from poor sensitivity. One contributing factor is technical: since 65 MHz typically separates the pump and detection frequencies, they cannot both be located at the center of the pseudo-Lorentzian microwave resonance of a single-mode resonator. To maximize the inversion efficiency, the pump pulse is usually placed at the center of the resonance, while the observer frequency is placed in the wing, with consequent reduction in sensitivity. Here, we consider an alternative configuration: by spacing pump and observer frequencies symmetrically with respect to the microwave resonance and by increasing the quality factor, valuable improvement in the signal-to-noise ratio can be obtained

Bifurcation of standing waves into a pair of oppositely traveling waves with oscillating amplitudes caused by a three-mode interaction

A novel flow state consisting of two oppositely travelling waves (TWs) with oscillating amplitudes has been found in the counterrotating Taylor-Couette system by full numerical simulations. This structure bifurcates out of axially standing waves that are nonlinear superpositions of left and right handed spiral vortex waves with equal time-independent amplitudes. Beyond a critical driving the two spiral TW modes start to oscillate in counterphase due to a Hopf bifurcation. The trigger for this bifurcation is provided by a nonlinearly excited mode of different symmetry than the spiral TWs. A three-mode coupled amplitude equation model is presented that captures this bifurcation scenario. The mode-coupling between two symmetry degenerate critical modes and a nonlinearly excited one that is contained in the model can be expected to occur in other structure forming systems as well.Comment: 4 pages, 5 figure

The Effects of Additives on the Physical Properties of Electroformed Nickel and on the Stretch of Photoelectroformed Nickel Components

The process of nickel electroforming is becoming increasingly important in the manufacture of MST products, as it has the potential to replicate complex geometries with extremely high fidelity. Electroforming of nickel uses multi-component electrolyte formulations in order to maximise desirable product properties. In addition to nickel sulphamate (the major electrolyte component), formulation additives can also comprise nickel chloride (to increase nickel anode dissolution), sulphamic acid (to control pH), boric acid (to act as a pH buffer), hardening/levelling agents (to increase deposit hardness and lustre) and wetting agents (to aid surface wetting and thus prevent gas bubbles and void formation). This paper investigates the effects of some of these variables on internal stress and stretch as a function of applied current density.Comment: Submitted on behalf of TIMA Editions (http://irevues.inist.fr/tima-editions

Structural and optical inhomogeneities of Fe doped GaN grown by hydride vapor phase epitaxy

We present the results of cathodoluminescence experiments on a set of Fe doped GaN samples with Fe concentrations of 5?1017, 1?1018, 1?1019, and 2?1020 cm-3. These specimens were grown by hydride vapor phase epitaxy with different concentrations of Fe. The introduction of Fe is found to promote the formation of structurally inhomogeneous regions of increased donor concentration. We detect a tendency of these regions to form hexagonal pits at the surface. The locally increased carrier concentration leads to enhanced emission from the band edge and the internal 4T1(G)?6A1(S) transition of Fe3+. In these areas, the luminescence forms a finely structured highly symmetric pattern, which is attributed to defect migration along strain-field lines. Fe doping is found to quench the yellow defect luminescence band and to enhance the blue luminescence band due to the lowering of the Fermi level and the formation of point defects, respectivel