Dynamics of thermalisation in small Hubbard-model systems

We study numerically the thermalisation and temporal evolution of the reduced density matrix for a two-site subsystem of a fermionic Hubbard model prepared far from equilibrium at a definite energy. Even for very small systems near quantum degeneracy, the subsystem can reach a steady state resembling equilibrium. This occurs for a non-perturbative coupling between the subsystem and the rest of the lattice where relaxation to equilibrium is Gaussian in time, in sharp contrast to perturbative results. We find similar results for random couplings, suggesting such behaviour is generic for small systems.Comment: 4 pages, 5 figure

Research on a non-destructive fluidic storage control device

Fluidic memory device with associated fluidic alpha numerical displa

Stress-Induced Delamination Of Through Silicon Via Structures

Continuous scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently three-dimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effect of thermal stresses on interfacial reliability of TSV structures. First, the three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results obtained by finite element analysis (FEA). Results from the stress analysis suggest interfacial delamination as a potential failure mechanism for the TSV structure. Analytical solutions for various TSV designs are then obtained for the steady-state energy release rate as an upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. Based on these results, the effects of TSV designs and via material properties on the interfacial reliability are elucidated. Finally, potential failure mechanisms for TSV pop-up due to interfacial fracture are discussed.Aerospace Engineerin

Towards Learning ‘Self’ and Emotional Knowledge in Social and Cultural Human-Agent Interactions

Original article can be found at: http://www.igi-global.com/articles/details.asp?ID=35052 Copyright IGI. Posted by permission of the publisher.This article presents research towards the development of a virtual learning environment (VLE) inhabited by intelligent virtual agents (IVAs) and modeling a scenario of inter-cultural interactions. The ultimate aim of this VLE is to allow users to reflect upon and learn about intercultural communication and collaboration. Rather than predefining the interactions among the virtual agents and scripting the possible interactions afforded by this environment, we pursue a bottomup approach whereby inter-cultural communication emerges from interactions with and among autonomous agents and the user(s). The intelligent virtual agents that are inhabiting this environment are expected to be able to broaden their knowledge about the world and other agents, which may be of different cultural backgrounds, through interactions. This work is part of a collaborative effort within a European research project called eCIRCUS. Specifically, this article focuses on our continuing research concerned with emotional knowledge learning in autobiographic social agents.Peer reviewe

Thermomechanical Reliability Challenges For 3D Interconnects With Through-Silicon Vias

Continual scaling of on-chip wiring structures has brought significant challenges for materials and processes beyond the 32 nm technology node in microelectronics. Recently threedimensional (3-D) integration with through-silicon-vias (TSVs) has emerged as an effective solution to meet the future interconnect requirement. Among others, thermo-mechanical reliability is a key concern for the development of TSV structures used in die stacking as 3-D interconnects. This paper examines the effects of thermally induced stresses on interfacial reliability of TSV structures. First, three-dimensional distribution of the thermal stress near the TSV and the wafer surface is analyzed. Using a linear superposition method, a semi-analytic solution is developed for a simplified structure consisting of a single TSV embedded in a silicon (Si) wafer. The solution is verified for relatively thick wafers by comparing to numerical results From finite element analysis (FEA). The stress analysis suggests interfacial delamination as a potential failure mechanism for the TSV structure. An analytical solution is then obtained for the steady-state energy release rate as the upper bound for the interfacial fracture driving force, while the effect of crack length is evaluated numerically by FEA. With these results, the effects of the TSV dimensions (e.g., via diameter and wafer thickness) on the interfacial reliability are elucidated. Furthermore, the effects of via material properties are discussed.Aerospace Engineerin

Characterization Of Thermal Stresses And Plasticity In Through-Silicon Via Structures For Three-Dimensional Integration

Through-silicon via (TSV) is a critical element connecting stacked dies in three-dimensional (3D) integration. The mismatch of thermal expansion coefficients between the Cu via and Si can generate significant stresses in the TSV structure to cause reliability problems. In this study, the thermal stress in the TSV structure was measured by the wafer curvature method and its unique stress characteristics were compared to that of a Cu thin film structure. The thermo-mechanical characteristics of the Cu TSV structure were correlated to microstructure evolution during thermal cycling and the local plasticity in Cu in a triaxial stress state. These findings were confirmed by microstructure analysis of the Cu vias and finite element analysis (FEA) of the stress characteristics. In addition, the local plasticity and deformation in and around individual TSVs were measured by synchrotron x-ray microdiffraction to supplement the wafer curvature measurements. The importance and implication of the local plasticity and residual stress on TSV reliabilities are discussed for TSV extrusion and device keep-out zone (KOZ).Microelectronics Research Cente

On Fast and Robust Information Spreading in the Vertex-Congest Model

This paper initiates the study of the impact of failures on the fundamental problem of \emph{information spreading} in the Vertex-Congest model, in which in every round, each of the $n$ nodes sends the same $O(\log{n})$-bit message to all of its neighbors. Our contribution to coping with failures is twofold. First, we prove that the randomized algorithm which chooses uniformly at random the next message to forward is slow, requiring $\Omega(n/\sqrt{k})$ rounds on some graphs, which we denote by $G_{n,k}$, where $k$ is the vertex-connectivity. Second, we design a randomized algorithm that makes dynamic message choices, with probabilities that change over the execution. We prove that for $G_{n,k}$ it requires only a near-optimal number of $O(n\log^3{n}/k)$ rounds, despite a rate of $q=O(k/n\log^3{n})$ failures per round. Our technique of choosing probabilities that change according to the execution is of independent interest.Comment: Appears in SIROCCO 2015 conferenc