Metastable States and Leakage in PN Junction Diodes

The low-temperature annealing kinetics of ion implanted silicon is a critical factor worthy of consideration when thin film crystalline silicon is processed on a low temperature substrate. Deep Level Transient Spectroscopy, Thermally Stimulated Current and Current-Voltage characteristics suggest that competition between Solid Phase Epitaxial Regrowth and dislocation loop formation is a critical factor in silicon implanted with P31 ions and annealed at temperatures ranging from 525°C to 65O°C. Solid Phase Epitaxy dominates the kinetics of fully amorphized samples annealed at 525°C, where shallow-level trap states dominate the reversed-bias leakage current of diodes. At low implanted doses (where the substrate is not completely amorphized) and at 65O°C, dislocation loop nucleation and growth seems to dominate annealing kinetics, resulting in the formation of a deep-level trap at .528 eV

African-American and White Women’s Appraisal of their Breast Cancer

African-American women are less likely to be diagnosed with breast cancer than are White women but are more likely to be adversely affected. Although differences in incidence and mortality have been explored in some depth, little attention has been paid to how these women cope with the disease or whether their appraisal of their breast cancer differs from that of White women. Using a comparative design, this study analyzed the differences in appraisal between African-American and White women with breast cancer. The findings suggest that no differences exist between African-American and White women’s appraisal of their breast cancer. The type of primary appraisal used most by both groups was harm to their health, safety, and physical well-being. The secondary appraisal used most was that breast cancer was an experience they had to accept. Possible links between appraisal and cognitive representations of illness and suggestions for further research on the appraisal are discussed

Fabrication of Fully Isolated nFETs Using Oxidized Porous Silicon

SOl (Silicon on Insulator) technology is an option in improving device performance as smaller devices run into scaling challenges. The devices for this study were fabricated using a FIPOS (Fully Isolated Porous Oxidized Silicon) process, which results in localized SOl active regions. The oxidation of electrochemically etched porous silicon (PSi) has demonstrated success in the formation of device quality localized S01 for CMOS applications 11,21. The formation of PSi can be done selectively by controlling the Fermi level in areas to be etched or not etched, which is typically done by adjusting the level of doping Ill. An alternative method is to introduce a reversible donor species such as protons 121 or fluorine (this work) for the selective formation of islands of crystalline silicon surrounded by porous silicon. Implanted fluorine in silicon has demonstrated a donor effect upon annealing at low temperature (600°C), which is reversible as the fluorine outdiffuses during higher temperature annealing (1000°C). This technique has been used to form crystalline silicon active regions with thickness less than 200 nm completely surrounded by oxidized porous silicon 131, shown in figure 1. This study involves the fabrication and characterization of nFETs on the active areas to investigate the electronic integrity of the silicon device regions

The Secrets of African Managerial Success

Summary Summary It has become customary to despair at the quality of African public sector management, and to attribute the problem to an inhospitable social and political context. Yet we can discover success stories even in the usual sector in which failure is most prevalent. By looking at these cases we can attempt to discover the ‘secret of success’ and thus some indications about how to deal with less successful cases. This article attempts to do this by looking at the life and career histories of four prominent Kenyan officials who were able to endow success on many enterprises that they led. It concludes that the way in which they were able to maintain the autonomy of their organisations was by establishing effective links with the political leadership; it explains how their commitment to good administration derived from and was reinforced by a strong sense of professional vocation; how their capacity to raise resources was reinforced by their ability to maintain the support of donor agencies; how they sought effective methods of balancing Africanisation against the need to retain expatriate staff; and how their willingness to take risks depended upon their ability to make a good living outside the state service if need be. Resumé Resumé Les Secrets du Succès du Management africain Il est devenu courant de désespérer de la qualité du management du secteur publique africain, et d'attribuer le problème à un contexte politique et social défavorable. Pourtant on peut trouver des succès même dans le secteur rural, où normalement l'échec est le plus fréquent. En analysant ces cas, nous pouvons essayer de découvrir les ‘secrets du succès’ et ainsi trouver quelques indications sur la manière de résoudre ceux qui ont moins réussi. Cet article se propose de présenter cette analyse en s'appuyant sur un exposé de la vie et la carrière de quatre important officiels du Kenya, qui ont mené au succès bien des projets qu'ils ont dirigés. Il analyse la manière dont ils ont réussi à maintenir l'autonomie de leurs organisations en établissant des liens efficaces avec les dirigeants politiques; aussi comment leur engagement pour une bonne administration provenait et était renforcée par un sentiment profond de vocation professionelle; comment leur aptitude à augmenter les resources a été renforcée par leur compétence dans le maintien de leur soutien Ils ont recherché des méthodes effectives pour équilibrer l'africanisation et le besoin de conserver le personnel étrange; Ils ont aussi recherché comment le fait qu'ils étaient disposés à prendre des risques dépendait de leur aptitude à gagner leur vie en dehors de leur fonction publique si cela était nécessaire

Stigmatizedâ Identity Cues: Threats as Opportunities for Consumer Psychology

Peer Reviewedhttps://deepblue.lib.umich.edu/bitstream/2027.42/146893/1/jcpy1076_am.pdfhttps://deepblue.lib.umich.edu/bitstream/2027.42/146893/2/jcpy1076.pd

A note on entropic uncertainty relations of position and momentum

We consider two entropic uncertainty relations of position and momentum recently discussed in literature. By a suitable rescaling of one of them, we obtain a smooth interpolation of both for high-resolution and low-resolution measurements respectively. Because our interpolation has never been mentioned in literature before, we propose it as a candidate for an improved entropic uncertainty relation of position and momentum. Up to now, the author has neither been able to falsify nor prove the new inequality. In our opinion it is a challenge to do either one.Comment: 2 pages, 2 figures, 2 references adde

Extended quantum conditional entropy and quantum uncertainty inequalities

Quantum states can be subjected to classical measurements, whose incompatibility, or uncertainty, can be quantified by a comparison of certain entropies. There is a long history of such entropy inequalities between position and momentum. Recently these inequalities have been generalized to the tensor product of several Hilbert spaces and we show here how their derivations can be shortened to a few lines and how they can be generalized. All the recently derived uncertainty relations utilize the strong subadditivity (SSA) theorem; our contribution relies on directly utilizing the proof technique of the original derivation of SSA.Comment: 4 page

Quantum information entropies of the eigenstates and the coherent state of the P\"oschl-Teller potential

The position and momentum space information entropies, of the ground state of the P\"oschl-Teller potential, are exactly evaluated and are found to satisfy the bound, obtained by Beckner, Bialynicki-Birula and Mycielski. These entropies for the first excited state, for different strengths of the potential well, are then numerically obtained. Interesting features of the entropy densities, owing their origin to the excited nature of the wave functions, are graphically demonstrated. We then compute the position space entropies of the coherent state of the P\"oschl-Teller potential, which is known to show revival and fractional revival. Time evolution of the coherent state reveals many interesting patterns in the space-time flow of information entropy.Comment: Revtex4, 11 pages, 11 eps figures and a tabl